Untitled
Abstract: No abstract text available
Text: Features Preliminary Datasheet Specifications in this document are tentative and subject to change. RX64M Group Renesas MCUs R01DS0173EJ0090 Rev.0.90 Feb 28, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC,
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RX64M
R01DS0173EJ0090
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
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RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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PDF
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TP-128
Abstract: No abstract text available
Text: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0200 Rev.2.00 Mar 11, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase
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RX63T
R01DS0087EJ0200
100-MHz
32-bit
12-bit
10-bit
IEEE-754
TP-128
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PDF
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R5F563T6EGFM
Abstract: No abstract text available
Text: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0210 Rev.2.10 Sep 26, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase
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RX63T
R01DS0087EJ0210
100-MHz
32-bit
12-bit
10-bit
IEEE-754
R5F563T6EGFM
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PDF
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R5F5210BBDFP
Abstract: PTLG0145KA-A R5F5210BBGFP R5F5210ABDFP R5F52108BDFB CAC P60 R5F5210BBDLK SCK12 87P51 R5F5210BBGFB
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. RX210 Group 768-KB/1-MB flash memory or 144/145-pin packages Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels;
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RX210
768-KB/1-MB
144/145-pin
50-MHz
32-bit
12-bit
10-bit
IEC60730
R01DS0195EJ0060
R5F5210BBDFP
PTLG0145KA-A
R5F5210BBGFP
R5F5210ABDFP
R5F52108BDFB
CAC P60
R5F5210BBDLK
SCK12
87P51
R5F5210BBGFB
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PDF
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R5F52108CGFP
Abstract: R5F52106BDLJ R5F52108CGFN R5F52106BDFM#30 R5F52108CDFP R5F52107CDFN#30
Text: Datasheet RX210 Group R01DS0041EJ0150 Rev.1.50 Oct 18, 2013 Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch
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RX210
R01DS0041EJ0150
50-MHz
32-bit
12-bit
10-bit
IEC60730
PLQP0144KA-A
PLQP0100KB-A
PLQP0080KB-A
R5F52108CGFP
R5F52106BDLJ
R5F52108CGFN
R5F52106BDFM#30
R5F52108CDFP
R5F52107CDFN#30
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PDF
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R5F5210BBDLK
Abstract: R5F52108CGFP PTLG0145KA-A rx210 R5F52108BDFB R5F52106ADFP SCI12 813Ah R5F5210BBGFB R5F52105BGFP
Text: Datasheet RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features R01DS0041EJ0140 Rev.1.40 Feb 19, 2013 PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch
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RX210
R01DS0041EJ0140
50-MHz
32-bit
12-bit
10-bit
IEC60730
64-bit
R5F5210BBDLK
R5F52108CGFP
PTLG0145KA-A
R5F52108BDFB
R5F52106ADFP
SCI12
813Ah
R5F5210BBGFB
R5F52105BGFP
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PDF
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R5F52108CGFP
Abstract: R5F52106BDFN PLQP0048KB R5F52106BGFN max3487 IR239 R5F52108BDFB AN009 R5F52106ADFP R5F52105BGFP
Text: Datasheet RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features R01DS0041EJ0130 Rev.1.30 Jan 22, 2013 PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch
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Original
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RX210
R01DS0041EJ0130
50-MHz
32-bit
12-bit
10-bit
IEC60730
64-bit
R5F52108CGFP
R5F52106BDFN
PLQP0048KB
R5F52106BGFN
max3487
IR239
R5F52108BDFB
AN009
R5F52106ADFP
R5F52105BGFP
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PDF
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Untitled
Abstract: No abstract text available
Text: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P
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K4S161622D-TI/P
16bit
K4S161622D
K4S161622D
50-TSOP2-400F
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PDF
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428169
Abstract: Texas Instrument 4203
Text: TMS416169, TMS416169P, TMS418169, TMS418169P TMS426169, TMS426169P, TMS428169, TMS428169P 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS888A - APRIL 1995 - REVISED JUNE 1995 ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO CYCLE «BAC *CAC ‘AA
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OCR Scan
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TMS416169,
TMS416169P,
TMS418169,
TMS418169P
TMS426169,
TMS426169P,
TMS428169,
TMS428169P
1048576-WORD
16-BIT
428169
Texas Instrument 4203
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PDF
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21D8
Abstract: No abstract text available
Text: TMS416800, TMS416800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 6 8 0 -D E C E M B E R 1 9 9 2 Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE <‘ RAC MAX) («CAC) (MAX) (*AA) (MAX) 15 ns 30 ns CYCLE (MIN) '416800/P-60
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OCR Scan
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TMS416800,
TMS416800P
416800/P-60
416800/P-70
416800/P-80
SMKS680-DECEMBER1992_
TMS416800
21D8
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PDF
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Hitachi "J suffix"
Abstract: No abstract text available
Text: TMS464400/P 16777216-WORD BY 4-BIT TMS464800/P 8388608-WORD BY 8-BIT TMS464160/P 4194304-WORD BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMWS003A - MARCH 199S - REVISED JUNE 1995 All Inputs, Outputs, and Clocks Are LVTTL Compatible This data sheet is applicable to all
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OCR Scan
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TMS464400/P
16777216-WORD
TMS464800/P
8388608-WORD
TMS464160/P
4194304-WORD
16-BIT
SMWS003A
TMS464400/P,
TMS464800/P,
Hitachi "J suffix"
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PDF
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CAC P60
Abstract: No abstract text available
Text: TMS427400, TMS427400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS274-JANUARY1993 DJ PACKAGEt TOP VIEW Organization . . . 4194 304 x 4 Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC c 1 DQ1 : 2 DQ2 : 3 Low Power Dissipation (TMS427400P)
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OCR Scan
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TMS427400,
TMS427400P
304-WORD
SMKS274-JANUARY1993
TMS427400P)
427400/P-6
SMKS274-JAN
CAC P60
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PDF
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tcs-f
Abstract: No abstract text available
Text: TMS426100, TMS426100P 16777 216-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORY SMKS261-JANUARY1993 Organization . . . 16 777 216 x 1 DJ PA C K A G E t TOP VIEW Single 3.3-V Power Supply (±0.3-V Tolerance) 1 V CC [ Low Power Dissipation (TMS426100P Only) - 100 nA CMOS Standby
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OCR Scan
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TMS426100,
TMS426100P
216-BIT
SMKS261-JANUARY1993
426100/P-60
426100/P-70
426100/P-8Q
426100/P-10
tcs-f
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PDF
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A11t
Abstract: No abstract text available
Text: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical
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OCR Scan
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TMS416400,
TMS416400P,
TMS417400,
TMS417400P
TMS426400,
TMS426400P,
TMS427400,
TMS427400P
4194304-WORD
SMKS881
A11t
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PDF
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8W dynamo
Abstract: No abstract text available
Text: TMS417809A, TMS427809Â, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKS694B-AUGUST 1996 - REVISED NOVEMBER 1997 This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent
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OCR Scan
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TMS417809A,
TMS427809Â
TMS427809AP
SMKS694B-AUGUST
TMS417809As
TMS427809A/Ps
TMS427809A,
8W dynamo
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PDF
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20D17
Abstract: No abstract text available
Text: TMS416160A, TMS418160A TMS426160A, TMS426160AP, TMS428160A, TMS428160AP 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS891B - AUGUST 1996 - REVISED MARCH 1997 DGE PACKAGE TOP VIEW This data sheet is applicable to all TMS41x 160As and TMS42x160A/Ps symbolized by Revision ‘E ” and subsequent
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OCR Scan
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TMS416160A,
TMS418160A
TMS426160A,
TMS426160AP,
TMS428160A,
TMS428160AP
1048576-WORD
16-BIT
SMKS891B
TMS41x
20D17
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh
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OCR Scan
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TMS426400,
TMS426400P
304-WORD
SMKS264-JANUARY
TMS426400P)
SMKS264-JANUAFT/
TMS42S400
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PDF
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CHIP SM 4108
Abstract: No abstract text available
Text: I | TMS45160, TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RAND0M-ACCESS MEMORIES SMHS1 SOD - AUGUST 1992 - REVISED JUNE 1995 This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-113.
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OCR Scan
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TMS45160,
TMS45160P
262144-WORD
16-BIT
TMS45160/Ps
45160/P-60
45160/P-70
45160/P-80
CHIP SM 4108
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS418160, TMS418160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS86O-OECEMBER 1992 Organization . . . 1 048 576 * Single 5-V Supply 10% Tolerance x 16 Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME WRITE CYCLE
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OCR Scan
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TMS418160,
TMS418160P
576-WORD
16-BIT
SMKS86O-OECEMBER
44tic
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70
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OCR Scan
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TMS416160,
TMS416160P
576-WORD
16-BIT
SMKS660-DECEMBER
416160/P-60
416160/P-70
416160/P-80
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PDF
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s561a
Abstract: No abstract text available
Text: TMS44100, TMS441 OOP, TMS46100, TMS46100P 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS561A - MARCH 1995 - REVISED JUNE 1995 Organization . . . 4194304 x 1 Single 5 V Power Supply, for TM S44100/P ±10% Tolerance Single 3.3 V Power Supply, for TM S46100/P
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OCR Scan
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TMS44100,
TMS441
TMS46100,
TMS46100P
4194304-WORD
SMHS561A
S44100/P
S46100/P
200-nA
s561a
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PDF
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S566A
Abstract: tms45169 TMS45169DZ
Text: TMS45169, TMS45169P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES _ S M H S566A -JU LY 1 9 9 6 - REVISED JANUARY 1997 DZ PACKAGE TOP VIEW Organization . . . 262144 x 16 5-V Supply (±10% Tolerance) Performance Ranges: '45169/P-50
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OCR Scan
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TMS45169,
TMS45169P
262144-WORD
16-BIT
S566A
45169/P-50
45169/P-6
TMS45169
40-lead
40/44-lead
TMS45169DZ
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS1BOA- MAY 1995 - REVISED JUNE 1995 D G EPAC KA G E ‘4xx160/P-60 ’4 0 160/P-70 '4xx160/P-80 A C C ESS A C C ESS A C C ESS READ OR
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OCR Scan
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TMS416160,
TMS416160P,
TMS418160,
TMS418160P
TMS426160,
TMS426160P,
TMS428160,
TMS428160P
1048576-WORD
16-BIT
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PDF
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