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    C743 TRANSISTOR Search Results

    C743 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    C743 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C745 TRANSISTOR

    Abstract: diode c741 C742 TRANSISTOR c745 diodes diode c744 diode c745 c744 diodes C748 C741 diode 3,3 kw 10MHz transistor module
    Text: PD - 5.027 CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


    Original     		CPV362MU 360Vdc, C-748 C745 TRANSISTOR diode c741 C742 TRANSISTOR c745 diodes diode c744 diode c745 c744 diodes C748 C741 diode 3,3 kw 10MHz transistor module PDF

    diode c741

    Abstract: uA 741 c CPV362MU c744 transistor C741 diode C743
    Text: Previous Datasheet Index Next Data Sheet PD - 5.027 CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


    Original     		CPV362MU 360Vdc, C-748 diode c741 uA 741 c CPV362MU c744 transistor C741 diode C743 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-34288-4/2 PDF

    7909 regulator

    Abstract: PTFA092213ELV4
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PTFA092213EL PTFA092213FL PTFA092213FL 220-watt, H-33288-6 H-34288-4/2 7909 regulator PTFA092213ELV4 PDF

    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350 PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TL235

    Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
    Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz


    Original     		PTFB091507FH PTFB091507FH H-34288-4/2 16ubstances. TL235 LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081 PDF

    TL117

    Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL117 c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802 PDF

    TRANSISTOR tl131

    Abstract: TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt TRANSISTOR tl131 TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803 PDF

    TL139

    Abstract: c803
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, H-33288-6 H-34288-4/2 TL139 c803 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt H-34288-4/2 21ngerous PDF

    TL2322

    Abstract: transistor tl120
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-4/2 TL2322 transistor tl120 PDF

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 PDF

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1 PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    TL2012

    Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL2012 TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221 PDF

    TL140

    Abstract: No abstract text available
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL140 PDF

    transistor c237

    Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 transistor c237 capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828 PDF

    d480 NPN

    Abstract: A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79
    Text: Application Report SLEA026 – December 2003 TAS5076-5182C6EVM Kim Nordtorp Madisen Digital Audio & Video Products ABSTRACT The TAS5076-5182C6EVM board is a six channel Pure Path Digital evaluation module for the integrated circuits TAS5076PFC and TAS5182DCA from Texas Instruments TI .


    Original     		SLEA026 TAS5076-5182C6EVM TAS5076-5182C6EVM TAS5076PFC TAS5182DCA 24-bit TAS5076 TAS5182, d480 NPN A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet r466 mosfet capacitor wima mks 4 U740 aks ti 79 PDF

    R747 diode

    Abstract: lm339 pwm mosfet diode C725 transistor C711 C711 TRANSISTOR C745 TRANSISTOR C784 transistor C756 TRANSISTOR R747 BC717
    Text: Application Report SLEA038 – July 2004 Implementation of Power Supply Volume Control Tomas Bruunshuus Texas Instruments Copenhagen ABSTRACT This document gives design guide lines for applications using the power supply volume control PSVC . The power supply volume control increases system performance by:


    Original     		SLEA038 R747 diode lm339 pwm mosfet diode C725 transistor C711 C711 TRANSISTOR C745 TRANSISTOR C784 transistor C756 TRANSISTOR R747 BC717 PDF

    hitachi transistor fn651

    Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
    Text: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.


    OCR Scan     		35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 Q0501 Q3801 Q3802 hitachi transistor fn651 fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS PDF

    diode c743

    Abstract: c743 diode
    Text: PD - 5.027 International iôRjRectifier CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


    OCR Scan     		CPV362MU 360Vdc, 5S452 00B0S3Ã diode c743 c743 diode PDF

    diode c744

    Abstract: c744 diodes diode c743 lm 5027 power transistor diode c746 c743 transistor c744 transistor c744 diode MV C744 ET C744
    Text: PD - 5.027 bitemational [îô r IRectifier CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


    OCR Scan     		CPV362MU 360Vdc, diode c744 c744 diodes diode c743 lm 5027 power transistor diode c746 c743 transistor c744 transistor c744 diode MV C744 ET C744 PDF