C0805COG500
Abstract: SOP8 C66 4E smd diode C0805COG500-101JNE 2X13 berg socket motorola smd diodes 3V IC LINEAR SMD 822271-1 samsung SMD resistors LT1086CT3.3
Text: BOM PROJECT QTY. Item Assy. L2 Mult Vendor/Part Number 1 11 1155 TA016TCM106KBR Description CAP,10 uf Tant. "B" MC5307C3 Rev. 3.3 Board Level Part Information Ref. Des. Manufacturer C1, C15, C16, C24, C35, C36, C48, C49, C53, C65, C112 Venkel Corporation 2
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TA016TCM106KBR
MC5307C3
C0805X7R500-103KNE
C0805X7R500-104KNE
C0805X7R500-152KNE
C0805COG500-102JNE
1500pf,
1000PF,
C0805COG500-101JNE
C0805COG500-471JNE
C0805COG500
SOP8 C66
4E smd diode
C0805COG500-101JNE
2X13 berg socket
motorola smd diodes
3V IC LINEAR SMD
822271-1
samsung SMD resistors
LT1086CT3.3
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AP7331-ADJ
Abstract: LM358 ir receiver UART/LM358 ir receiver
Text: E2 R13 470 VCC-3.3V VCC-1.8V C56 100nF C60 100nF C61 100nF C57 100nF C62 100nF C138 100nF C63 100nF C58 100nF C64 100nF 470 C65 100nF LINE-OUT_R 10uF C43 3.3nF LINE-OUT LEFT R14 100K E3 R15 E5 10uF LINE-OUT_L 10uF C42 3.3nF SCHEMATICS RIGHT R16 100K VCC-3.3V
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100nF
AP7331-ADJ
LM358 ir receiver
UART/LM358 ir receiver
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murata lot no
Abstract: C92 diode lot No murata resistor 0402 GRM36COG1R6B50 C91 diode
Text: MAX2291 Korea PCS NCDMA EV Board BILL OF MATERIAL Date:5/11/01 BOM REV: 1.0 SCHEMATIC REV: BOARD REV: P5, Layout#4 DESIGNATION C90 QTY 1 C91 1 C92 1 C17, C46, C47, C50, L8, L12, D1, R2, IN4SMA C48 C49 C52 C56, C66 C45, C54, C57, C64 C62 C58 C65 9 D1 L9 L11
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MAX2291
ATC100A4R7BW150XB
ATC100A020BW150XB
GRM36COG1R6B50
470pF
GRM36X7R471K50
GRM36COG6R8B50
GRM36COG1R6B50
murata lot no
C92 diode
lot No murata
resistor 0402
C91 diode
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Untitled
Abstract: No abstract text available
Text: E2 R13 VCC-1.8V C65 100nF E3 R15 470 10 10 C46 C47 C48 E4 47nF 10nF 10nF 10uF MP3-SCLK MP3-SIN MP3-SOUT MP3-CS# MP3-RST# MP3-DREQ MP3-DCS LN-IN_L VCC-1.8V 1M 2 C59 3 2.2uF IN OUT GND EN ADJ 5 4 AP7331-ADJ C55 22pF 100K R36 R37 27K4 Designed by MikroElektronika Ltd.
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100nF
288MHz
AP7331-ADJ
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FRD070IF40-A-T
Abstract: LM358 RF receiver module
Text: R13 470 E5 10uF C56 100nF C60 100nF C61 100nF C57 100nF C62 100nF C132 100nF C63 100nF C58 100nF C64 100nF LINE- OU T E2 10uF C42 LINE- OU T_ L 3.3nF C65 100nF E3 R15 470 C43 C44 1uF LINE- O UT_ R 10uF 10 10 C47 C48 E4 10nF 10nF 10uF MP3-SOUT MP3-SIN MP3-SCLK
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100nF
FRD070IF40-A-T
LM358 RF receiver module
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cm5b
Abstract: bsm600ga
Text: Technische Information / technical information BSM600GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM600GA120DLC
cm5b
bsm600ga
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FF300R06KE3
Abstract: No abstract text available
Text: Technische Information / technical information FF300R06KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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FF300R06KE3
FF300R06KE3
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FF300R12KT3
Abstract: DIODE BJE 80 BJE 80 diode
Text: Technische Information / technical information FF300R12KT3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FF300R12KT3
FF300R12KT3
DIODE BJE 80
BJE 80 diode
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FD300R06KE3
Abstract: No abstract text available
Text: Technische Information / technical information FD300R06KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and EmCon3 diode IGBT-Brems-Chopper / IGBT-brake-chopper Vorläufige Daten / preliminary data
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FD300R06KE3
FD300R06KE3
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FS150R12KT3
Abstract: No abstract text available
Text: Technische Information / technical information FS150R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS150R12KT3
FS150R12KT3
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BSM600GA120DLC
Abstract: e43a
Text: Technische Information / technical information BSM600GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM600GA120DLC
BSM600GA120DLC
e43a
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12MT4
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FF400R06ME3
Abstract: No abstract text available
Text: Technische Information / technical information FF400R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode EconoDUAL™ 2 module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter
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FF400R06ME3
FF400R06ME3
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FF150R12ME3G
Abstract: c65 diode
Text: Technische Information / technical information FF150R12ME3G IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FF150R12ME3G
FF150R12ME3G
c65 diode
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EconoDUAL™2 module with the trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter
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FF200R06ME3
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fs150r12kt3
Abstract: No abstract text available
Text: Technische Information / technical information FS150R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS150R12KT3
fs150r12kt3
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Untitled
Abstract: No abstract text available
Text: BAT46 Small Signal Schottky Diodes VOLTAGE RANGE: 100 V CURRENT: 0.15 A Features For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected by a PN junction guard ring agains t exces s ive
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BAT46
BAT46W
DO--35
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LL46
Abstract: BAT46 BAT46W
Text: BL GALAXY ELECTRICAL BAT46 VOLTAGE RANGE: 100 V CURRENT: 0.15 A SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected by a PN junction guard ring agains t exces s ive
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BAT46
BAT46W
DO--35
LL46
BAT46
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL LL46 VOLTAGE RANGE: 100 V CURRENT: 0.15 A SMALL SIGNAL SCHOTTKY DIODE FEATURES MINI-MELF Cathode indification φ1 .5±0.1 For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected
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BAT46W
DO-35
BAT46
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LL46
Abstract: No abstract text available
Text: LL46 Small Signal Schottky Diode VOLTAGE RANGE: 100 V CURRENT: 0.15 A MINI-MELF Features Cathode indification φ1 .5±0.1 For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected by a PN junction guard ring agains t exces s ive
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BAT46W
DO-35
LL46
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TRANSISTOR C65
Abstract: c65 diode marking c65 CMLM0405 CMLM0605 X10-4 code c65
Text: CMLM0605 MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE SAT SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0605 is a single PNP Transistor and Schottky Diode packaged
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CMLM0605
CMLM0605
OT-563
CMLM0405
100mA
500mA
18-January
TRANSISTOR C65
c65 diode
marking c65
CMLM0405
X10-4
code c65
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Untitled
Abstract: No abstract text available
Text: 4bflbS2b 0DG1A47 153 IIXY □IXYS C65 VII100-12S2 IGBT Modules VCES VCE sat = 100 A = 1200 V = 3.7 V High Short Circuit SOA Capability Symbol Test Conditions VCES vtcgr T, = 25‘ C to 150*C 1200 V Tj = 25‘C to 150'C; R ^ = 1 Mfi 1200 V VGES Continuous
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0DG1A47
VII100-12S2
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Untitled
Abstract: No abstract text available
Text: MbfibEEb □□□Ifiâl bô4 • IXY nixYS ^C65 VCES VII150-12S2 VCE sat IGBT Modules = 150 A = 1200 V = 3.7 V High Short Circuit SOA Capability L~ 8 0 9 11 & 6 10 Symbol Test Conditions v CES T, = 25'C to 150'C 1200 V Vco, Tj = 25'C to 150"C; RGE = 1 M fl
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VII150-12S2
4bflb22b
DD016S4
VII150-12S2
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Untitled
Abstract: No abstract text available
Text: 4bfifc.22b 0001Ô43 SQÖ IIX Y □IXYS ^C65 VCES IGBT Modules VII75-12S1 VCE sat = 75 A = 1200 V = 3.7 V — Î1 — U High Short Circuit SOA Capability r a W l L“ =1-— 8 o o 9 1=J1A Symbol Test Conditions VCES Tj = 25‘C to 150’C 1200 V Vco« Tj - 25'C to 150'C; RG6 = 1 Mi)
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VII75-12S1
125-C
Mbflb22b
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