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    C612PN Search Results

    C612PN Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C612PN General Electric Semiconductor Data Handbook 1977 Scan PDF
    C612PN Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    C612PN Richardson Electronics Inverter Silicon Controlled Rectifiers Scan PDF
    C612PN Silicon Power Thyristor, Thyristor, 1800V Forward Blocking Voltage Scan PDF

    C612PN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    scr prx

    Abstract: lt742
    Text: 74-C 0 1 6 7 1 POUEREX INC ^?4 DeT | T E m t B l D High Speed OQOlt.71 7 Silicon Controlled Rectifier 2 00 0 Volts T-25-20 C612 1150 Amps RMS AM PLIFYING GATE c The General Electric device type C612 is a new pressure mounted, high current SCR designed for power switching at high voltage and high frequen­


    OCR Scan     		PDF T-25-20 MAX/10 scr prx lt742

    C702 diode

    Abstract: sinewave inverter 5000 watt SCR 6 pulse Gate Drive C612 C612L C612PE C612PM C612PN C612PS Diode SJ 9c
    Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S


    OCR Scan     		PDF

    GE C712 thyristor

    Abstract: GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612
    Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE


    OCR Scan     		PDF 488BHIIMIÃ GE C712 thyristor GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612

    RS 302 440 40

    Abstract: C612 C612L C612PE C612PM C612PN C612PS C612PT C613L C613PT
    Text: High Speed Silicon Controlled Rectifier 2000 Volts C612 1150 Amps RMS a m p l if y in g g a t e The General Electric device type C612 is a new pressure m ounted, high current SCR designed for power switching at high voltage and high frequen­ cies up to 5 KHz . The C612 gate structure has an involute, rnterdigitated


    OCR Scan     		PDF

    C712L

    Abstract: TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E
    Text: INVERTER SCRs RICHARDSON/ NATIONAL EL LEE D NATIONAL T Y P E NO. VOLTAGE R A N G E Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tim • 7734T17 OOOOL'ìS 57b ■ NAT C612 C613 C648 C712 C713 1300-2000 1300-2000 500-1200 1300-2000 1300-2000


    OCR Scan     		PDF 7734T1? C648N C648T C648P C648PA C648PB C612PC C613PC C712PC C713PC C712L TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E

    GE C712

    Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
    Text: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION


    OCR Scan     		PDF 488BHIIMIÃ GE C712 C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit

    Thyristor c612

    Abstract: C612L C612 C612PE C612PM C612PN C612PS C612PT 20-CX
    Text: C612 40 mm Inverter Thyristor 2000V / 735A / 60us S IL IC O N ^ ^TpOWGR The C612 is ideal for forced commutation. It is processed by multi-diffusion, utilizing 40mm diameter silicon with a unique involute pilot gate. It is supplied in a disk package ready to


    OCR Scan     		PDF C612L C612PT C612PN C612PS C612PM C612PE C612/6RT42 0V/15 0V/10 10jUsec. Thyristor c612 C612 20-CX

    alcoa electrical joint compound

    Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
    Text: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S


    OCR Scan     		PDF 488BHIIMIÃ SF1154 SF1154, G322L LS2037 G322L, alcoa electrical joint compound C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T

    diode c648

    Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
    Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S


    OCR Scan     		PDF 488BHIIMIÃ SF1154, G322L diode c648 C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312