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    Abstract: No abstract text available
    Text: TOSHIBA T C55V2161 FTI-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The C55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


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    PDF C55V2161 FTI-85f-10 072-WORD 16-BIT TC55V2161FTI 152-bit