C50K
Abstract: No abstract text available
Text: Double Balanced Mixers C50K 5 to 9GHz Specifications RF Frequency LO Frequency LO Power 5 to 9GHz 5 to 9GHz 10 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles
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Untitled
Abstract: No abstract text available
Text: C50A – C50K 50A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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C50AR
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c50a
Abstract: C50B C50D C50G C50J C50K
Text: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C50AR
c50a
C50B
C50D
C50G
C50J
C50K
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C50K
Abstract: No abstract text available
Text: Double Balanced Mixers C50K 5 to 9 GHz Specifications RF Frequency LO Frequency LO Power 5 to 9 GHz 5 to 9GHz 10 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles
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Untitled
Abstract: No abstract text available
Text: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E
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C50AR
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Untitled
Abstract: No abstract text available
Text: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C50AR
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Untitled
Abstract: No abstract text available
Text: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated
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C50AR
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C5024
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package C50 Package Weight mg 620 Product Group Type No. C5020, C5024, C5036 C50A – C50K C7020, C7024, C7036 Component Die Material Solder Alloy Slug Copper Alloy Plating Silver
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C5020,
C5024,
C5036
C7020,
C7024,
C7036
2011/65/EU.
C5024
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SMD DIODE UF4007
Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Text: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and
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O-220,
O-220A
BZT52C2V4S
BZT52C51S
OD-323
BZX84C2V4W
BZX84C51W
OT-323
MMBZ5221BW
MMBZ5259BW
SMD DIODE UF4007
1N5819 SOD-323
1N4007 sod-123
1a7 sot-23
FR107 SOD-123
uf5408 SMD diode
Bosch alternator diode
bosch alternator
1N5822 SMD
1n5400 smd
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7404
Abstract: No abstract text available
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
7404
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C3502
Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Text: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR
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LD5006
DO-21
PF5000
PF5001
PF5002
PF5004
PF5006
PF5008
PF5010
C3502
c3504
C25M diode
C2502
C3502 transistor
c3501
C2503
c2504
C2501
C25M
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cell phone
Abstract: C50A C50M working OF IC 723 single LOAD CELL C50B C50D C50G C50J C50K
Text: C50A – C50M W TE PO WE R SEM IC O ND UC TO R S 50A AUTOMOTIVE RECTIFIER CELL Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX B D E C Mechanical Data ! ! ! ! A Case: Protected with Silicon Rubber
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counter 7468
Abstract: 74565 MIL I 23659 6884 TMP320C50KGD 68840
Text: C50KGD, TMP320BC51KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008A – JULY 1996 – REVISED JUNE 1997 D D D D D D Fast Instruction Cycle Times of 35 ns and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation – 9K-Words x 16-Bit Dual-Access On-Chip
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TMP320C50KGD,
TMP320BC51KGD
SGZS008A
16-Bit
C50KGD
056-Word
counter 7468
74565
MIL I 23659
6884
TMP320C50KGD
68840
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Acc 2089
Abstract: TMP320C50KGD TMP320LC50KGD SPRS030
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C − JULY 1996 − REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
Acc 2089
TMP320C50KGD
TMP320LC50KGD
SPRS030
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SPRS030
Abstract: 224K-word XDS510PP dsp processor Architecture of TMS320C5X
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
SPRS030
224K-word
XDS510PP
dsp processor Architecture of TMS320C5X
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TMS320C50DU
Abstract: No abstract text available
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
TMS320C50DU
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Untitled
Abstract: No abstract text available
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C - JULY 1996 - REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
1056-Word
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TMP320C50KGD
Abstract: TMP320LC50KGD 8405
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008B – JULY 1996 – REVISED JUNE 1999 D D D D D D D 35-ns and 50-ns Single-Cycle Instruction Execution Time for 5 V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3 V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008B
35-ns
50-ns
16-Bit
056-Word
TMP320C50KGD
TMP320LC50KGD
8405
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Acc 2089
Abstract: TMP320C50KGD TMP320LC50KGD
Text: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation
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TMP320C50KGD,
TMP320LC50KGD
SGZS008C
25-ns,
35-ns,
50-ns
16-Bit
056-Word
Acc 2089
TMP320C50KGD
TMP320LC50KGD
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MIL I 23659
Abstract: 42058
Text: C50KGD, TMP320BC51KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE S G ZS 008-JU LY 1996 • F as t Instr uct i on Cy c l e T i me s of 35 ns and SO ns • S o u r c e - C o d e C o m p a t i b l e With all ’C 1 x and ’C2 x D e v i c e s • 1 6- Bi t Parall el L ogi c Uni t P L U
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TMP320C50KGD,
TMP320BC51KGD
008-JU
MIL I 23659
42058
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B634X
Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Text: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast
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t2d 64
Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,
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B50K
Abstract: c36k
Text: Double Balanced Mixers COMMUNICATIONS BAND MIXERS ♦ ♦ ♦ ♦ ♦ Wide Range of Connection Types including SMA, Pin, Drop-In, Tab High Isolation Low Conversion Loss Quick Delivery Time Low Cost Operating Temperature Range = -55°C to +100°C Storage Temperature Range = -6S°C to +125°C
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B50VXSP
B50K
c36k
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mb633
Abstract: QFP196 mb631 SQF-P25 QFP-1002 MB63XXXX
Text: RPR 2 1993 August 1990 Edition 4.0 DATA SHEET f u j Ît s u : MB63XXXX AU SERIES CMOS GA TE ARRA YS_ DESCRIPTION The AU series of 1 2|j.m CMOS gate arrays, available in 8 types with from 10K to 100K gates, has ultra fast speed of 0.6ns per gate. Thanks to its channel-free structure, basic cells packed are usable for logic cell as well as memory cell, or wiring areas in order to achieve the desired
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MB63XXXX
PV0077-908A4
mb633
QFP196
mb631
SQF-P25
QFP-1002
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