BGA6289
Abstract: BGA2031
Text: BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
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BGA6289
BGA6289
BGA6x89
BGA2031
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SXA-389B
Abstract: Sirenza amplifier SOT-89 MCH18 SXA-389 AN058
Text: Application Note - AN058 Using SXA-389B with Original SXA-389 Application Circuit Abstract This application note is for customers using the SXA-389 and considering switching to the SXA389B. The typical RF performance of the SXA389B inserted in the original SXA-389 application
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AN058
SXA-389B
SXA-389
SXA389B.
SXA389B
SXA-389B.
SXA-389,
SXA-389B
Sirenza amplifier SOT-89
MCH18
AN058
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Untitled
Abstract: No abstract text available
Text: ASX501 250 ~ 2500 MHz MMIC Amplifier Features Description 18dB Gain at 900 MHz The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication
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ASX501
ASX501,
100pF
XC0900A-03S
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matching circuit of atf 52189
Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
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ATF-52189
ATF-52189
ATF-521P8
5989-4040EN
matching circuit of atf 52189
BLM21PG600SN1D
53189
ATF-521P8
ATF-53189
RO4350
depletion mode PHEMT .s2p
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ADL5230-EVALZ
Abstract: ADL5320 ADL5320ARKZ-R7 c5 47 sot89
Text: Preliminary Technical Data FEATURES 400 MHz to 2700 MHz Pre-driver RF Amplifier ADL5320 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 2700 MHz Gain of +13.7 dB Gain at 2140 MHz OIP3 of+42.0 dBm at 2140 MHz P1dB +25.6 dBm at 2140 MHz Noise Figure of 4.2 dB at 2140 MHz
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ADL5320
OT-89
ADL5320
O-243
40407-A
OT-89]
ADL5320ARKZ-R7
ADL5320ARKZ-WP1
ADL5230-EVALZ
c5 47 sot89
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zener diode c5
Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Text: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 900 MHz 29.5 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX401
ASX401,
100pF
RCP2150A03
zener diode c5
Zener C422
zener diode c6
C2 6 zener diode
5-6V Zener Diode
Zener Diode C3 5
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267M3502104K
Abstract: 2425-C
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
267M3502104K
2425-C
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RF AMP marking c7 sot-89
Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
RF AMP marking c7 sot-89
marking 25 mmic sot-89
9C0603 ordering
Sirenza amplifier SOT-89 Marking
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Untitled
Abstract: No abstract text available
Text: ASX601 250 ~ 2500 MHz MMIC Amplifier Features Description 16 dB Gain at 900 MHz 32.7 dBm P1dB at 900 MHz 49 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASX601, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX601
ASX601,
100pF
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Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
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r0603
Abstract: S0603 RJ11x2 RV1 1M DM9601 DM9801E
Text: 8 7 Q1 G910/SOT89 VIN +3.3V + C2 47UF/25V/E.C. 2 L1 1 D MDC MDIO +3.3V X X X EECS PW_RST# X X X X X X X X 4.7K x 4 + C3 1UF/25V/E.C. RESET 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DGND X RX_CLK RX_DV COL CRS RXD3 RXD2 RXD1
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G910/SOT89
47UF/25V/E
1UF/25V/E
C0603
BEAD/120ohm
S0603
25MHZ/49US
r0603
S0603
RJ11x2
RV1 1M
DM9601
DM9801E
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CL10B104KONC
Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
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AN022
SGA-9289
EAN-101535
CL10B104KONC
AN022
MCH185A220JK
la 4440 amplifier circuit diagram 300 watt
MCH185A390JK
MCH185A100DK
MCH185A4R7CK
Sirenza amplifier SOT-89
MCR03J200
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Untitled
Abstract: No abstract text available
Text: 400 MHz to 2700 MHz ¼ Watt RF Driver Amplifier ADL5320 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 400 MHz to 2700 MHz Gain of 16.9 dB at 880 MHz OIP3 of 45.0 dBm at 880 MHz P1dB of 25.4 dBm at 880 MHz Noise figure: 4.1 dB at 880 MHz Power supply voltage: 3.3 V to 5 V
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ADL5320
OT-89
O-243
09-12-2013-C
OT-89]
ADL5320ARKZ-R7
ADL5320-EVALZ
OT-89,
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Untitled
Abstract: No abstract text available
Text: HMC453ST89 / 453ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE
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HMC453ST89
453ST89E
HMC453ST89E
CDMA2000
HMC453ST89
HMC453ST89E
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schematic diagram power amplifier free download
Abstract: circuit diagram of alpha 400 power supply Rogers 4350 datasheet HMC453ST89 HMC453ST89E 51 ohm resistor SOT89 marking
Text: HMC453ST89 / 453ST89E v01.0205 LINEAR & POWER AMPLIFIERS - SMT 6 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm
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HMC453ST89
453ST89E
HMC453ST89E
CDMA2000
HMC-DK002
HMC453ST89
schematic diagram power amplifier free download
circuit diagram of alpha 400 power supply
Rogers 4350 datasheet
51 ohm resistor
SOT89 marking
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Rogers 4350 datasheet
Abstract: HMC453ST89 HMC453ST89E
Text: HMC453ST89 / 453ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE
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HMC453ST89
453ST89E
HMC453ST89E
CDMA2000
HMC453ST89
HMC453ST89E
Rogers 4350 datasheet
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Xa3 TRANSISTOR
Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Text: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102231
Xa3 TRANSISTOR
041R
267M3502104
MCH18
MMIC "SOT 89" marking
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Xa3 TRANSISTOR
Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology
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SXA-389
SXA-389Z
SXA-389
AN-075
SXA-389B
EDS-102231
Xa3 TRANSISTOR
MCH18
SXA-389B
SXA-389Z
267M3502104
sxa389z marking
SXA389Z
XA3Z
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0603CS
Abstract: ADL5320 ADL5320ARKZ-R7 AN-772 GRM155 HBT transistor GaAs gsm block diagram
Text: 400 MHz to 2700 MHz RF Driver Amplifier ADL5320 Operation: 400 MHz to 2700 MHz Gain of 17 dB at 880 MHz OIP3 of 45 dBm at 880 MHz P1dB of 25.4 dBm at 880 MHz Noise figure: 4 dB at 880 MHz Power supply: 5 V Power supply current: 104 mA typical Internal active biasing
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ADL5320
OT-89
ADL5320
ADL532
O-243
40407-A
OT-89]
ADL5320ARKZ-R7
ADL5320-EVALZ1
0603CS
AN-772
GRM155
HBT transistor GaAs
gsm block diagram
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ATF-53189
Abstract: SMA CONN ATF - 53189 AMPLIFIER ATF-521P8 ATF53189 RO4350 53189
Text: 2.0 GHz high-linearity second stage LNA/driver using Avago Technologies ATF-53189 Application Note 5244 Introduction Circuit Description Avago Technologies’ ATF-53189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
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ATF-53189
ATF-53189
ATF-521P8
5989-3846EN
SMA CONN
ATF - 53189 AMPLIFIER
ATF53189
RO4350
53189
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Untitled
Abstract: No abstract text available
Text: ASL19W 5-3000 MHz High Linearity LNA MMIC Features Description •20 dB Gain at 900 MHz The ASL19W, a wideband linear low noise amplifier ·22 dBm P1dB at 900 MHz MMIC, has a low noise and high linearity at low bias current, being suitable for use in both receiver and
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ASL19W
ASL19W,
OT-89
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XA3Z
Abstract: No abstract text available
Text: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
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SXA-389
400MHz
2500MHz
OT-89
400MHz
to2500MHz
XA3Z
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Untitled
Abstract: No abstract text available
Text: ASW318 5 ~ 4000 MHz MMIC Amplifier Features Description 16.5 dB Gain at 900 MHz The ASW318, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems
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ASW318
ASW318,
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