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    C5 155 10 Price and Stock

    TDK Corporation C5750X7T2E155K200KA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 1.5uF X7T 10% T: 2mm
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    Mouser Electronics C5750X7T2E155K200KA 1,165
    • 1 $3.12
    • 10 $2.4
    • 100 $1.83
    • 1000 $1.33
    • 10000 $1.18
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    TDK Corporation C5750X7T2E155M200KA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT RECOMMENDED ALT 810-C5750X7T2E155KKA
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    Mouser Electronics C5750X7T2E155M200KA 1,000
    • 1 $3.09
    • 10 $2.37
    • 100 $1.8
    • 1000 $1.27
    • 10000 $1.18
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    TDK Corporation C5750X7R2A155M230KA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3225X7R2A225K
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    Mouser Electronics C5750X7R2A155M230KA 500
    • 1 $1.53
    • 10 $1.15
    • 100 $0.86
    • 1000 $0.605
    • 10000 $0.515
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    TDK Corporation C5750JB2A155M230KA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3225JB2A225K23B
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    Mouser Electronics C5750JB2A155M230KA 306
    • 1 $1.54
    • 10 $1.16
    • 100 $0.861
    • 1000 $0.696
    • 10000 $0.592
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    TDK Corporation C5750X7R2A155K230KM

    Multilayer Ceramic Capacitors MLCC - SMD/SMT MLCC,2220,X7R,100V,1.5F,2.3mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C5750X7R2A155K230KM
    • 1 $1.55
    • 10 $1.08
    • 100 $0.861
    • 1000 $0.613
    • 10000 $0.525
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    C5 155 10 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Fiber Optics 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor V23806-A84-C5 Features • Compliant with ATM, SONET OC-3, SDH STM-1 • Compact integrated transceiver unit with – MQW laser diode transmitter – InGaAs PIN photodiode receiver


    Original     		PDF V23806-A84-C5

    V23806-A84-C5

    Abstract: B78108-S1153-K optical module 2X9
    Text: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)


    Original     		PDF V23806-A84-C5 25including D-13623, V23806-A84-C5 B78108-S1153-K optical module 2X9

    A84 diode

    Abstract: B78108-S1153-K V23806-A84-C5 analog transmitter circuit using laser diode
    Text: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)


    Original     		PDF V23806-A84-C5 D-13623, A84 diode B78108-S1153-K V23806-A84-C5 analog transmitter circuit using laser diode

    analog transmitter circuit using laser diode

    Abstract: V23806-A84-C5 V23806-A84-C6 B78108-S1153-K transmitter circuit using laser diode Tx 433 with three pins
    Text: V23806-A84-C5 5 V V23806-A84-C6 3.3 V Single Mode 155 MBd ATM 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)


    Original     		PDF V23806-A84-C5 V23806-A84-C6 D-13623, de/Semiconductor/products/37/376 analog transmitter circuit using laser diode V23806-A84-C5 V23806-A84-C6 B78108-S1153-K transmitter circuit using laser diode Tx 433 with three pins

    Untitled

    Abstract: No abstract text available
    Text: ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description  14 dB Gain at 2000 MHz  27 dBm P1dB at 2000 MHz  42 dBm OIP3 at 2000 MHz  ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset  MTTF > 100 Years  Single Supply The ASX415, a power amplifier MMIC, has a high


    Original     		PDF ASX415 ASX415, 100pF

    tq crystal

    Abstract: CD4045 CMOS 4045 CD4045AD contador 21 stage counter 40N25 4045 4045BPC 4045BDM
    Text: 2 1 -stufiger Zähler 21 -Stage Counter Compteur B 21 etages Contatore a 21 stad1 Contador de 21 pasos Tl t -Ta 1611 15 I I Sp Sn CMOS 4045 F 1 14 ] 1 13 1 1 12 1 11 1 10 11 GRENZDATEN TYP Type Type Tip0 Tfpo Hersteller Manufatk Fabricants Produttori FabRcanteS


    Original     		PDF 4045BDC 4045BDM 4045BFM 220022oC 21-bit 097152MHz tq crystal CD4045 CMOS 4045 CD4045AD contador 21 stage counter 40N25 4045 4045BPC 4045BDM

    TC1776

    Abstract: rnc75 RFM73 smd marking code s82 RY16 RJM73 RJM74P RJ73 RNC65 Ceratech
    Text: BS EN ISO9001:2000 FM51927 ULTRA HIGH STABILITY EE1/20, EE1/10, EE1/8 MOLD TYPE RESISTORS EE1/4, EE1/2 FEATURES • Advanced thin film technology · Very low TCR: lower than ±5ppm/℃. · Tolerance up to ±0.02% · Excellent overall stability: Class 0.025


    Original     		PDF ISO9001 FM51927 EE1/20, EE1/10, 2000Hz TC1776 rnc75 RFM73 smd marking code s82 RY16 RJM73 RJM74P RJ73 RNC65 Ceratech

    Untitled

    Abstract: No abstract text available
    Text: 155 Mbps Bi-directional Single Fiber Transceiver B-1x/1x-155S-TPM3-SSC4-102 Features • Coaxial single mode single fiber package with SC connector • Wavelength Tx 1310nm / Rx 1550nm B-13/15-155S-TPM3-SSC4-102 • Wavelength Tx 1550nm / Rx 1310nm (B-15/13-155S-TPM3-SSC4-102)


    Original     		PDF B-1x/1x-155S-TPM3-SSC4-102 1310nm 1550nm B-13/15-155S-TPM3-SSC4-102) 1550nm 1310nm B-15/13-155S-TPM3-SSC4-102) GR-468-CORE LUMNDS11506-Dec0104

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1

    AN215A

    Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A
    Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original     		PDF MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1 AN215A z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A

    Untitled

    Abstract: No abstract text available
    Text: Multimode 155Mbps 2x10 SFF Optical Transceiver Features • LC duplex receptacle • Standard 2 x 10 footprint • 850nm VCSEL transmitter with automatic • • • • • power control Laser bias and power monitor AC or DC coupled LVPECL/PECL compatible


    Original     		PDF 155Mbps 850nm

    2743021446

    Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1513N MRF1513NT1 2743021446 j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N

    MAX954

    Abstract: F226 DCM103
    Text: * MAX954 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Outputs Swing Rail to Rail * Internal Comparator Hysteresis * Op Amp Gain Stability 10V/V


    Original     		PDF MAX954 MAX954 RH101 RH102 DP101 DP102 VP100 F226 DCM103

    AN721

    Abstract: MRF1518NT1 A113 AN211A AN215A AN4005 EB212 MRF1518N j327 transistor J016
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF1518N Rev. 10, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1518N MRF1518NT1 AN721 MRF1518NT1 A113 AN211A AN215A AN4005 EB212 MRF1518N j327 transistor J016

    J449

    Abstract: AS030721-39N J657 korin 3214W-1-103E DB-84006L-175 EXCELDRC35C PD84006L-E transistor l54 J387
    Text: DB-84006L-175 Evaluation board using PD84006L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 14.0 ± 0.8 dB ■ Efficiency: 59 % - 68 % ■ Load mismatch: 10:1 all phases


    Original     		PDF DB-84006L-175 PD84006L-E DB-84006L-175 PD84006L-E J449 AS030721-39N J657 korin 3214W-1-103E EXCELDRC35C transistor l54 J387

    905-170

    Abstract: MRF3010 VK200 VK20019-4B
    Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    Original     		PDF MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS V V23806-A84-C5 33 Single Mode 155 MBd ATM 2x9 Transceiver w ith Rx Monitor Absolute M axim um Ratings Exceeding any one o f th e se values m ay d e stro y th e device im m e dia te ly. Package Pow er D issipation*1 . 1.5 W


    OCR Scan     		PDF V23806-A84-C5 D-13623, de/semiconductor/products/37/376

    VS648

    Abstract: vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148
    Text: VARO SEMICONDUCTOR, INC. G P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS 1 AMP 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt­ age8 (V br) ■ Non-controlled Avalanche series with 50V,


    OCR Scan     		PDF ReJ447 DLS-042 VJ647 VJ847 VJ048 VJ148 VS648 vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148

    Untitled

    Abstract: No abstract text available
    Text: QS8886A Q • • • • • • High-Speed CMOS 16Kx4 SRAM with Output Enable High Speed Access and Cycle times 8ns/10ns/12ns/15ns Commercial 10ns/12ns/15ns/20ns Military Output Enable feature Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8886A 16Kx4 8ns/10ns/12ns/15ns 10ns/12ns/15ns/20ns MIL-STD-883, QS8886A 16Kx4, MDSS-00024-00

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)


    OCR Scan     		PDF KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10: KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SCU-400 KM64B1003 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10 nnA(max.) Operating KM68B1002J-8 :175mA(Max.) KM68B1002J-10: 165 mA(Max )


    OCR Scan     		PDF KM68B1002 128Kx8 KM68B1002J-8 175mA KM68B1002J-10: KM68B1002J-12: KM68B1002J-15: KM68B1002J 32-SOJ-400 KM68B1002

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)


    OCR Scan     		PDF KM64V1003A KM64V1003A-12: 160mA KM64V1003A-15 KM64V1003A-17 KM64V1003A-20 KM64V1003AJ 32-SOJ-400 KM64V1003AT: 32-TSOP2-4QOF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM64V1001A 2 5 6 K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1001A-15 : 160 mA (Max.)


    OCR Scan     		PDF KM64V1001A KM64V1001A-15 KM64V1001A-17 KM64V1001A-20 KM64V1001AJ 28-SQJ-400 KM64V1003A 576-bit

    QS8888

    Abstract: No abstract text available
    Text: QS8888 High-Speed CMOS 16Kx4 SRAM with Common I/O Q FEATURES/BENEFITS High Speed Access and Cycle times 8ns/10ns/12ns/l5ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8888 16Kx4 8ns/10ns/12ns/l5ns/20ns/25ns 12ns/15ns/20ns/25ns/35ns MIL-STD-883, 22-pin 24-pin QS8888