C4935
Abstract: 2SC4935 C4935 Y 2SA1869
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating
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Original
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2SC4935
2SA1869
SC-67
C4935
2SC4935
C4935 Y
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PDF
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2SC4935
Abstract: No abstract text available
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage
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Original
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2SC4935
SC-67
2-10R1A
2SC4935
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PDF
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C4935
Abstract: C4935 Y 2SC4935
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol
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Original
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2SC4935
2SA1869
SC-67
2-10R1A
C4935
C4935 Y
2SC4935
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PDF
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c4935
Abstract: 2SC4935 2SA1869 IC502
Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol
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Original
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2SC4935
2SA1869
SC-67
c4935
2SC4935
IC502
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PDF
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SMC1602
Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3
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Original
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CS8406
RA300
RA302
1/16W
SMC1602
SN7002DW
c3231
Q2576
r2561
C3239
C3303
C2651
C5060
U4900
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PDF
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r9824
Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16
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Original
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1/10W
XW9902
XC9901
50R28
U9500
XW9903
25MIL
10MIL
R9915
r9824
R9825
HT 1200-4 smd
L9707
HT 1200-4
r9810
L9708
U5400
r2561
C3523
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PDF
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IRF5505
Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT
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Original
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TEST10
TEST11
CS8406
RA300
RA302
1/16W
IRF5505
C3427
SN7002DW
LD1807
343S0284
apple AirPort Extreme
h11m
r3361
HC17051
1n914 onsemi
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PDF
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IRLM2402
Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Text: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED
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Original
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RF420
CF414
1/16W
RF424
IRLM2402
c4977
cf325
NEC c5292
VD357
C5292 nec
NEC "C4305"
cf406
C4934
C5248
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PDF
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APPLE A6 CHIP
Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6
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Original
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RF420
CF414
1/16W
RF424
APPLE A6 CHIP
cf325
W07 sot 23
C-492-5
SMD M05 sot23
C4977
cf406
p66 apple
c5297
I342
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PDF
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