c337 nec
Abstract: nec 2405 pc337 NEC R18 C337 W C337 c337 transistor Usage of Three-Terminal Regulators NEC F75-100 C337 25
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT PC337 3-TERMINAL NEGATIVE ADJUSTABLE REGULATOR PIN CONFIGURATION Marking Side DESCRIPTION μPC337HF, μPC337HF-AZ The μPC337 is an adjustable 3-terminal negative voltage regulator, which has 1.5 A for the output current. The output voltage
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PC337
PC337HF,
PC337HF-AZ
PC337
MP-45G)
O-220ems,
c337 nec
nec 2405
NEC R18
C337 W
C337
c337 transistor
Usage of Three-Terminal Regulators NEC
F75-100
C337 25
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC 2405
Abstract: c337 transistor MARKING G 3pin C337 MP-45G PC337
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C337 W
Abstract: PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G
Text: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit PC337 3 端子可変負出力電圧安定化電源回路 μPC337 は，出力電圧可変形の 3 端子負出力電圧安定化電源回路です。 2 個の外付け抵抗により，−1.3 V から−30 V までの範囲で出力電圧を自由に
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PC337
PC337HF,
PC337HF-AZ
PC337HF
MP-45G)
O-220
C337 W
PC337
C337
C337 W 65
C337 25
C337 W 60
c337 nec
PC337HF
WS60-00-1
MP-45G
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c337 transistor
Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
c338 transistor
transistor c337
C337 w 79
C336 SMD
C339
transistor c338
c336 transistors
g10 smd transistor
Transistor c340
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c337 transistor
Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
SMD-220
C-340
c337 transistor
C337 w 79
transistor c337
C336 SMD
c338 transistor
c336 transistors
C337 W 80 transistor
C337 W
transistor SMD LOA
transistor c338
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heat cost allocator RF
Abstract: MSP430 ekg Heat Volume Counter MSP430 taxi meter MSP430 data loggers heat cost allocator P315S msp430 flow meter 16KROM msp430 peripheral interface
Text: Ultra-low power design with M SP 43 MSP430 Design Seminar 2000 Introduction of MSP430 Family Features / Device Overview New Peripheral Modules MSP430 Development Tools Overview Internet / Application Reports 1 Ultra-low power design with M SP 43 Flash Technology on MSP430 controllers
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MSP430
16-bit
1024B
16bit
15bit
heat cost allocator RF
MSP430 ekg
Heat Volume Counter MSP430
taxi meter
MSP430 data loggers
heat cost allocator
P315S
msp430 flow meter
16KROM
msp430 peripheral interface
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DIODE SMD c336
Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT
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XC2V250
120-PIN
XC2V250-5FG256C
AD9287,
AD9219,
AD9228,
AD9229,
AD9259
EB05053-0-11/05
DIODE SMD c336
xcf025
xcf02sv020
b30 c300
DIODE cd c326
MOLEX 87832-1420
SMD fuse P200
xcf02sv020c
smdc110f
XCF025V
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C337 W
Abstract: c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC337
PC337HF,
PC337HF-AZ
PC337HF
MP-45G)
O-220254B-4
G13783JJ3V0DS
PC337HF3
C337 W
c337 nec
PC337
C337 W 65
Pc337 nec
C337
MP-45G
PC337HF
Q16Q17
C337 40
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XCF02SV020C
Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format
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XC2V250
133MHz
120-PIN
05053-0RL
XC2V250-5FG256C
XCF02SV020C
CBSB-14-01A-RT
SNT-100-BK-G-H
HSC-ADC-FPGA-9289
XCF02SV020C
Xilinx xcf02sv020c
manual SMHU
diode c329
JP105
xcf02sv020
C337 W 63
c338 pin details
SMHU
transistor c331
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PSMN5R0-30YL
Abstract: jmb 363
Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
jmb 363
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PH1225A
Abstract: PH1225AL
Text: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only
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PH1225AL
PH1225AL
PH1225A
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c337 transistor
Abstract: C338 c338 transistor
Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH1825AL
PH1825AL
c337 transistor
C338
c338 transistor
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PSMN1R5-25YL
Abstract: No abstract text available
Text: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN1R5-25YL
PSMN1R5-25YL
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transistor c337
Abstract: PSMN1R7-30YL
Text: PSMN1R7-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN1R7-30YL
PSMN1R7-30YL
transistor c337
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PSMN2R0-30YL
Abstract: No abstract text available
Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R0-30YL
PSMN2R0-30YL
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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irfz34n equivalent
Abstract: diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N
Text: PD - 9.1489A International IQR Rectifier IRFIZ34N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55V RDS on = 0.04Q
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IRFIZ34N
C-338
C-339
irfz34n equivalent
diode c335
diode C339
C337 W
DIODE c336
C337 W 61
equivalent IRFZ34n
IRFIZ34N
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v42254-a3346
Abstract: V42254-A3216-B309
Text: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.
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15-contact
25-contact
37-contact
V23529-A1221-B
25-contact,
v42254-a3346
V42254-A3216-B309
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burndy Y39
Abstract: YAV4C-TC14-FXB
Text: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M
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SE208075
SE206075-01
5E208075
burndy Y39
YAV4C-TC14-FXB
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F9530
Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-341
43S54S2
IRF9530,
IRF9531,
IRF9532,
IRF9533
T-39-21
C-342
F9530
diode C339
IRF9530
C337 W 63
complementary of irf9530
C337 W
IRF9530 complementary
diode c341
IRF9532
IR 9530
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C 337-25
Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC337
BC327.
115002/00/03/pp8
C 337-25
C 33725
c337 pnp transistor
C 337-40
c 33740
transistor NPN c337
BC337 sot54
c337 transistor
transistor c337
C337 W 63
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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