C337 TRANSISTOR Search Results

C337 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

C337 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c337 transistor Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340 Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to	Original	IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340	PDF
c337 transistor Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338 Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to	Original	IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338	PDF
F9530 Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530 Text: HE 0 I 4A5S452 000 fl5âfl fi \| Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s	OCR Scan	T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530	PDF
C 337-25 Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63 Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).	OCR Scan	BC337 BC327. 115002/00/03/pp8 C 337-25 C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63	PDF
EL 817 c337 Abstract: transistor c337 c337 transistor C337 W 61 DS4005 Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification	OCR Scan	BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005	PDF
PSMN5R0-30YL Abstract: jmb 363 Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN5R0-30YL PSMN5R0-30YL jmb 363	PDF
c337 transistor Abstract: C338 c338 transistor Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PH1825AL PH1825AL c337 transistor C338 c338 transistor	PDF
PSMN6R0-30YL Abstract: No abstract text available Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN6R0-30YL PSMN6R0-30YL	PDF
PSMN3R0-30YL Abstract: No abstract text available Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN3R0-30YL PSMN3R0-30YL	PDF
PSMN2R5-30YL Abstract: No abstract text available Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN2R5-30YL PSMN2R5-30YL	PDF
PSMN1R5-25YL Abstract: No abstract text available Text: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN1R5-25YL PSMN1R5-25YL	PDF
transistor c337 Abstract: PSMN1R7-30YL Text: PSMN1R7-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN1R7-30YL PSMN1R7-30YL transistor c337	PDF
PSMN2R0-30YL Abstract: No abstract text available Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN2R0-30YL PSMN2R0-30YL	PDF
PSMN4R0-30YL Abstract: No abstract text available Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN4R0-30YL PSMN4R0-30YL	PDF

PSMN9R0-30YL Abstract: c337 transistor Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN9R0-30YL PSMN9R0-30YL c337 transistor	PDF
PSMN7R0-30YL Abstract: 10S100 Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN7R0-30YL PSMN7R0-30YL 10S100	PDF
c33725 Abstract: c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA	Original	BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor	PDF
PSMN2R0-30YL Abstract: No abstract text available Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN2R0-30YL PSMN2R0-30YL	PDF
PSMN5R0-30YL Abstract: No abstract text available Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN5R0-30YL PSMN5R0-30YL	PDF
PSMN7R0-30YL Abstract: C337 40 w 22 Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN7R0-30YL PSMN7R0-30YL C337 40 w 22	PDF
c33725 w 78 Abstract: BC337 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817 Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA	Original	BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 w 78 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817	PDF
C337 w 79 Abstract: PSMN2R5-30YL Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN2R5-30YL PSMN2R5-30YL C337 w 79	PDF
PSMN9R0-30YL Abstract: No abstract text available Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN9R0-30YL PSMN9R0-30YL	PDF
PH5030AL Abstract: PH5030 Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PH5030AL PH5030AL PH5030	PDF

C337 TRANSISTOR Search Results

C337 TRANSISTOR Result Highlights (5)

C337 TRANSISTOR Datasheets Context Search

c337 transistor

c337 transistor

F9530

C 337-25

EL 817 c337

PSMN5R0-30YL

c337 transistor

PSMN6R0-30YL

PSMN3R0-30YL

PSMN2R5-30YL

PSMN1R5-25YL

transistor c337

PSMN2R0-30YL

PSMN4R0-30YL

PSMN9R0-30YL

PSMN7R0-30YL

c33725

PSMN2R0-30YL

PSMN5R0-30YL

PSMN7R0-30YL

c33725 w 78

C337 w 79

PSMN9R0-30YL

PH5030AL