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    BTA1759M3

    Abstract: BTC4505M3
    Text: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		C309M3 BTA1759M3 -400V) -10mA/-1mA. BTC4505M3. OT-89 UL94V-0 BTA1759M3 BTC4505M3 PDF