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    C25 SCHOTTKY Search Results

    C25 SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    C25 SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    102k 50v capacitor

    Abstract: dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3
    Text: Qty RefDes Part Number Value Description 5 C10, C23, C25, C29, C30 GRM39X7R103K025A 0.01uF Capacitor, Ceramic, 0.01uF, 25V, X7R, 10% muRata 2 C9, C32 GRM39X7R223K025A 1 2 1 2 1 2 2 1 C46 C27, C35 C12, C15, C24, C43 C13 C19 C14, C36 C16 C42, C44 C39, C45 C18


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    PDF GRM39X7R103K025A GRM39X7R223K025A GRM39X7R473K025A GRM39X7R104K016A 022uF 022uF, 047uF 047uF, 102k 50v capacitor dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3

    diode c18 st

    Abstract: capacitor 22uF smd 3528 SMD LD3 JTAG header 10x2 Connector C38 diode sot23 PW1 SMD diode B2 3Pin header 3x2 Pitch HEADER 25X2 HDR2X3
    Text: STEVAL-IFW001V1 Bill Of Material Designator B1, B2 BAR1, BAR2, BAR3, BAR4, BAR5, BAR6, BAR7, BAR8 C1, C2, C3, C4, C5, C6, C7, C8, C9, C11, C12, C14, C17, C18, C20, C21, C23, C24, C25, C26, C27, C28, C29, C30, C31, C36, C37, C39, C40, C41, C42, C43, C44, C45, C46, C47,


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    PDF STEVAL-IFW001V1 P-DT2112C DT2112C BAR43SFILM SN65HVD230 DALC208SC6 E-STE101P STR912FW44X6 32KHz 25MHz diode c18 st capacitor 22uF smd 3528 SMD LD3 JTAG header 10x2 Connector C38 diode sot23 PW1 SMD diode B2 3Pin header 3x2 Pitch HEADER 25X2 HDR2X3

    470uF 50V capacitor

    Abstract: nichicon aluminum capacitor 2n2222a SOT23 105k x7r 50 240-333 Nichicon Capacitor of capacitor 470uf 16v nichicon 470uF capacitor 10 uF x 25v JST SOT-23
    Text: REV. A Count RefDes 3 C63 C19 C34 1 C14 1 C46 4 C12 C27 C41 C52 6 C25 C39 C1 C15 C30 C44 1 C51 4 C13 C28 C42 C10 1 C5 3 C29 C43 C54 3 C4 C18 C33 3 C3 C17 C32 1 C11 2 C26 C40 2 C45 C53 PMP405 Part Number Std Std Std Std Std Std Std Std Std Std Std Std Std Std


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    PDF PMP405 012uF 018uF 022uF 100pF 470uF 50V capacitor nichicon aluminum capacitor 2n2222a SOT23 105k x7r 50 240-333 Nichicon Capacitor of capacitor 470uf 16v nichicon 470uF capacitor 10 uF x 25v JST SOT-23

    7343 capacitor

    Abstract: TDSON-8 Mosfet capacitor 22uf 10v 0402 4TPD680M TDSON-8 capacitor 1uf 16v x7r 0402 ILSCO 22-milliohm IHLP4040DZERR56M11 MFR resistor
    Text: Filename: PMP2277_REVA_bom.xls Date: 01/12/2007 PMP2277_REVA BOM COUNT 6 3 1 6 3 3 1 2 1 3 3 6 3 4 1 3 3 3 3 1 3 2 1 1 1 3 1 1 1 1 1 3 1 1 3 1 2 5 3 2 3 RefDes C1, C2, C18, C19, C30, C31 C11, C25, C37 C12 C13, C16, C26, C28, C38, C40 C15, C27, C39 C17, C29, C41


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    PDF PMP2277 680uF 047uF 7343 capacitor TDSON-8 Mosfet capacitor 22uf 10v 0402 4TPD680M TDSON-8 capacitor 1uf 16v x7r 0402 ILSCO 22-milliohm IHLP4040DZERR56M11 MFR resistor

    MOSFET C25

    Abstract: c25 mosfet
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


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    PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MOSFET C25 c25 mosfet

    MARKING CODE c25

    Abstract: c25 mosfet CMLM0205 sot-563 MOSFET D1 MOSFET C25
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


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    PDF CMLM0205 OT-563 CMLM0205 OT-563 200mA 100mA 500mA 18-January MARKING CODE c25 c25 mosfet sot-563 MOSFET D1 MOSFET C25

    c25 mosfet

    Abstract: MOSFET C25 C25 schottky
    Text: CMLM0205 Multi Discrete Module SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a low VF Schottky diode


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    PDF CMLM0205 OT-563 CMLM0205 200mA 100mA 500mA c25 mosfet MOSFET C25 C25 schottky

    MARKING CODE c25

    Abstract: C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs CMLM0205 10V Schottky Diode
    Text: Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode


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    PDF CMLM0205 CMLM0205 OT-563 OT-563 200mA, 400mA 100mA 500mA MARKING CODE c25 C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs 10V Schottky Diode

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


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    PDF ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    hitachi mosfet power amplifier audio application

    Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
    Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners


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    PDF AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI

    schottky diode 43t

    Abstract: C25T05Q C25T06Q S3 DIODE schottky
    Text: SCHOTTKY BARRIER DIODE C25 T05 Q C25T06Q 2 7 .7 A / 5 0 ~ 6 0 V 4.8U 89 4 .4 Ü 7 3 P L S Q U A R E -P A K f 10.6 .417) f 09.6Î.378) .6 (.3 " 1 0 .li.3 9 8 ) 1-81.071)* i _ 0 ~ 0 .3 (. 0 1 2 ) FEATURES I.4(.Q 55) I TltW) L- »Similar to TO-263AB Case,


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    PDF C25T05Q C25T06Q O-263AB 35C925) 3C118) bbl5123 schottky diode 43t C25T06Q S3 DIODE schottky

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


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    PDF 1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1

    10 35L DIODE

    Abstract: diode IO 35L B1189 C25T03QL A 2761 I B1-189 C25T02QL FPG3
    Text: SCHOTTKY BARRIER DIODE C25T02QL C25T03QL 27.7A/20— 30V 4.61189 1.4 .Q55) 1.ZÒÓ4Ì) 1 SQUARE - PAK I FEATURES ° Similar to TO - 263AB Case, Surface Mounting Device r _ 1.0(.Ò39) 1.4Ç055) I ° Dual Diodes - Cathode Common 2.75U08)^ 2.35(.9Z5) 7.5Í.295)


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    PDF C25T02QL C25T03QL 263AB T02QL T03QL 02s-J 100KHz bbl51S3 10 35L DIODE diode IO 35L B1189 C25T03QL A 2761 I B1-189 FPG3

    B5A45VI

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL D A TA B5A45VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=115°C . • Repetitive Peak Reverse Voltage


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    PDF B5A45VI 60-c/w B5A45VI

    ph-15 diode

    Abstract: B5A90VI wavin C 12 PH diode
    Text: SEMICONDUCTOR TECHNICAL DATA B5A90VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=115°C . • Repetitive Peak Reverse Voltage : V rrm = 9 0 V .


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    PDF B5A90VI ph-15 diode B5A90VI wavin C 12 PH diode

    D0214AB

    Abstract: HSM380 HSM390
    Text: 3 Amp Schottky Rectifier HSM380, HSM390 i - 1- A Dim. Inches 1 C Minimum J - Maximum Notes A T 1T - B - - - B - - D021+AB D0215AB Microsemi Catalog Number M illim e te r Maximum Minimum Working


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    PDF HSM380, HSM390 D0214AB D0215AB HSM380* HSM390Â HSM390 HSM380

    B5A45VI

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA B5A45VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=115°C . • Repetitive Peak Reverse Voltage : V rrm = 4 5 V .


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    PDF B5A45VI B5A45VI

    B5A60VI

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA B5A60VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=115°C . • Repetitive Peak Reverse Voltage : V rrm = 6 0 V .


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    PDF B5A60VI -20A//zs B5A60VI

    B5A30VD

    Abstract: B5A30VL
    Text: SEMICONDUCTOR TECHNICAL DATA B5A30VD/VL SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : I0=5A Tc=110°C . • Repetitive Peak Reverse Voltage : V rrm -3 0 V .


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    PDF B5A30VD/VL B5A30VD B5A30VL B5A30VD B5A30VL

    B10A45VI

    Abstract: No abstract text available
    Text: SEMICONDUCTOR T E C H N IC A L D A T A B10A45VI SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : Io=10A Tc=130°C . • Repetitive Peak Reverse Voltage : V rrm = 4 5 V .


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    PDF B10A45VI B10A45VI

    MBR1635

    Abstract: MBR1645 u1 z 35
    Text: MBR1635 AND MBR1645 SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT - 1 6 .0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power loss,


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    PDF MBR1635 MBR1645 O-220 MIL-STD-202, -50ir u1 z 35

    FKS5

    Abstract: MBR2535CT MBR2545CT UBR2535CT
    Text: MBR2535CT AND MBR2545CT SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT - 30.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal to silicon rectifier, majority carrier conduction Low power loss,


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    PDF O-220 MBR2535CT MBR2545CT FKS5 UBR2535CT