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    C238 TRANSISTOR Search Results

    C238 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C238 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor C238

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2383 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2S C238 3 Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. 5.1 M AX. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • High Voltage : V qeq = 160V • Large Continuous Collector Current Capability.


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    2SC2383 2SA1013 75MAX transistor C238 PDF

    BC238

    Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
    Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301


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    BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC548B BC238 BCY59A ZTX302 PDF

    sef520

    Abstract: diode C238 sgsp311 sef522 SEF521 SG 2058
    Text: S G S-THOMSON 0 7 E D ; 73C 17514 7 7 *3 1 r ii. . SEF520 '•J SEF521 V SEF522 SEF523 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


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    SEF520 SEF521 SEF522 SEF523 SEF520 SEF523 SEF522/SEF523 SGSP311 diode C238 SG 2058 PDF

    transistor c237

    Abstract: transistor C238 transistor c242 transistor c240 c238 transistor IRGBF20F
    Text: PD - 9.776A International mmRectifier IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    10kHz) IRGBF20F TQ-220AB C-242 transistor c237 transistor C238 transistor c242 transistor c240 c238 transistor IRGBF20F PDF

    transistor C239

    Abstract: transistor C238
    Text: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBF20F 10kHz) O-220AB C-241 TQ-220AB C-242 transistor C239 transistor C238 PDF

    IRF624

    Abstract: No abstract text available
    Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­


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    T-39-11 T0-220AB C-239 IRF624, IRF625 C-240 IRF624 PDF

    transistor C238

    Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
    Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V


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    IRGBF20F 10kHz) O-220AB C-242 transistor C238 transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor PDF

    C-238

    Abstract: D-12 IRGBF20F transistor c240 transistor C238
    Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V


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    IRGBF20F 10kHz) O-220AB C-242 C-238 D-12 IRGBF20F transistor c240 transistor C238 PDF

    transistor C239

    Abstract: C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238
    Text: Previous Datasheet Index Next Data Sheet PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBF20F 10kHz) O-220AB C-242 transistor C239 C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238 PDF

    2N4036 g1

    Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    BC548B BC548C BC549B BC549C BC108A BC108B BC108C BC109B BC109C ZTX300 2N4036 g1 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 PDF

    bc238

    Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
    Text: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L


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    BC546P BC556P ZTX304 ZTX504 BC182P BC212P ZTX107 ZTX212 BC547P BC557P bc238 ZTX108 BC107P BC212P BC556P BC557P PDF

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177 PDF

    transistor C143

    Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
    Text: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999


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    ElanSC520 000MHz 768kHz 333MHz 318MHz ECSMA-25 ECSMA-24 ECPSM29T-32 transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231 PDF

    transistor SMD p41

    Abstract: transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint
    Text: Item Number 1 2 3 4 5 6 7 8 Quantity 1 11 3 6 4 1 9 2 Value 220uF 0.1uF 1nF 100uF TANT 0.1uF 10nF 100pF 1nF Description 220uF 10V TPSE227K10R0100 X7R 0.1uF 25V 0805 X7R 1nF 50V 0805 TANT 100UF 16V X7R 0.1uF 25V 0805 X7R 10nF 25V 0805 COG 100pF 50V 0805 X7R 1nF 50V 0805


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    220uF 100uF 100pF 220uF TPSE227K10R0100 100pF transistor SMD p41 transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: DEMĆDAI1608 PCI1608 Evaluation Board User’s Guide April 2002 DAV Digital Audio/Imaging Japan DAL SLEU013 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


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    DAI1608 PCI1608 SLEU013 CN004 CN003 10uF/16V) 10uF/16V CN002 PDF

    SWITCHING TRANSISTOR C144

    Abstract: capacitor wima mks 4 10uF/16v CAPACITOR 0603 L1312 TRANSISTOR C144 home theater printed circuit board Kwang Sung 8020P-01-200L C143 SE transistor L130 l132 SOT-23
    Text: User's Guide SLAU243 – March 2008 TAS5342LDDV6EVM This user’s guide describes the operation of the evaluation module for the TAS5342L Digital Amplifier Power Output Stage using TAS5086 Digital Audio PWM Processor from Texas Instruments. The user’s guide also provides measurement data and design information like schematic, bill of materials, and


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    SLAU243 TAS5342LDDV6EVM TAS5342L TAS5086 TAS5342LDDV6EVM SWITCHING TRANSISTOR C144 capacitor wima mks 4 10uF/16v CAPACITOR 0603 L1312 TRANSISTOR C144 home theater printed circuit board Kwang Sung 8020P-01-200L C143 SE transistor L130 l132 SOT-23 PDF

    d331 npn transistor

    Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
    Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .


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    SLEA055 TAS5508-5142K7EVM TAS5508BPAG TAS5142DKD, 32-bit 24-bit 48-bit TIC-HSINK-015 d331 npn transistor pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450 PDF

    transistor C458

    Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
    Text: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module


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    SLEA061 TAS5518-5152K8EVM TAS5518PAG TAS5152DKD, 32-bit 24-bit 48-bit transistor C458 d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet PDF

    L1312

    Abstract: transistor c114 esh DIODE C921 UA78M12
    Text: User's Guide SLAU230A – September 2007 – Revised October 2007 TAS5162DDV6EVM This user's guide describes the operation of the evaluation module for the TAS5162 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The


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    SLAU230A TAS5162DDV6EVM TAS5162 TAS5086 L1312 transistor c114 esh DIODE C921 UA78M12 PDF

    g31 m7 te MOTHERBOARD CIRCUIT diagram

    Abstract: FDV301N SOT23 D E6327 Application
    Text: User's Guide SLLU148 – May 2011 TLK10002 Dual-Channel, 10-Gbps, Multi-Rate Transceiver Evaluation Module This user’s guide describes the usage and construction of the TLK10002 evaluation module EVM . This document provides guidance on proper use by showing some device configurations and test modes. In


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    SLLU148 TLK10002 10-Gbps, g31 m7 te MOTHERBOARD CIRCUIT diagram FDV301N SOT23 D E6327 Application PDF

    XTAL200

    Abstract: No abstract text available
    Text: User's Guide SLLU121 – October 2009 TLK100 External Voltages EVM This User Guide details the design and operation of the evaluation module EVM for the TLK100. 1 2 3 4 5 6 Contents TLK100 EVM Purpose and Content .


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    SLLU121 TLK100 TLK100. TLK100EXTEVM XTAL200 PDF

    transistor c114 esh

    Abstract: transistor c913 transistor c915 C144 Audio Frequency Amplifier Transistor High transistor BC 548 Data 470r m3 J102 J103 NPN/transistor c114 esh TAS5086
    Text: User's Guide SLLU096A – February 2007 – Revised March 2007 TAS5132DDV6EVM This user’s guide describes the operation of the evaluation module for the TAS5132 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The document also provides measurement data and design


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    SLLU096A TAS5132DDV6EVM TAS5132 TAS5086 transistor c114 esh transistor c913 transistor c915 C144 Audio Frequency Amplifier Transistor High transistor BC 548 Data 470r m3 J102 J103 NPN/transistor c114 esh PDF

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13 PDF

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13 PDF