Emitter
Abstract: logitech
Text: IR Emitter and Detector Product Data Sheet LTE-C216-P Spec No.: DS50-2012-0016 Effective Date: 08/17/2012 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTE-C216-P
DS50-2012-0016
BNS-OD-FC001/A4
BNS-OD-C131/A4
BNS-OD-C131/A
Emitter
logitech
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intel g41 motherboard circuit block diagram downs
Abstract: MS146818B MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM xHCI Specification AK33 AV schematic circuit for sata ssd disk JESD21-C 12120P intel b75 DIN 74 - Bm5
Text: Intel 7 Series / C216 Chipset Family Platform Controller Hub PCH Datasheet June 2012 Order Number: 326776-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
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TRANSISTOR tl131
Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
84MHz
TRANSISTOR tl131
TL235
TL231
TL137
tl117
TL130
tl134
Tl232
C804
tl127
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PCC104bct-nd
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
84MHz
PCC104bct-nd
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Untitled
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
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PTFB090901EA
Abstract: No abstract text available
Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced
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PTFB090901EA
PTFB090901FA
PTFB090901EA
PTFB090901FA
90-watt
H-37265-2
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TL239
Abstract: TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241
Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208SV
PTFB213208SV
320-watt
H-34275-6/2
TL239
TL140
TL230
Tl141
TL249
TL142
TL235
TL-141
tl144
tl241
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4871I
Abstract: No abstract text available
Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208SV
PTFB213208SV
320-watt
H-37275G-6/2
4871I
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PTFB090901
Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB090901EA
PTFB090901FA
PTFB090901FA
90-watt
H-36265-2
H-37265-2
PTFB090901
TL127
569w
100B4R7BW500X
PCC104BCTND
PCC104bct-nd
TRANSISTOR c104
TRANSISTOR c801
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PTFB090901EA
Abstract: No abstract text available
Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB090901EA
PTFB090901FA
PTFB090901EA
PTFB090901FA
90-watt
H-37265-2
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Untitled
Abstract: No abstract text available
Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path
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PXAC201602FC
PXAC201602FC
140-watt
H-37248-4
10ubstances.
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
pxac201202fc-gr1a
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
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TL250
Abstract: TL239
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
TL250
TL239
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Untitled
Abstract: No abstract text available
Text: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261212FC
PXAC261212FC
120-watt
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J499
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
28ances.
J499
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183408SV
PTFB183408SV
340-watt
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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atc200b104kw50
Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
atc200b104kw50
TL170
TL235
TL138
TL140
tl239
Tl141
TL163
tl172
tl147
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TL172
Abstract: TL170
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB183404E
PTFB183404F
PTFB183404E
PTFB183404F
340-watt
H-37275-6/2
TL172
TL170
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mn5134
Abstract: C217 c216 001
Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA M O C 215 M O C 216 M O C 217 S m a ll O u tlin e O p to is o la to r s Transistor Output T h e se devices co n sist of a galliu m arse n id e infrared em itting d iod e opticaily co up led to a m on olith ic silicon pho to tran sistor detector, in a surface m ountable, sm a ll outline,
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ESC Electronics
Abstract: ESC B104 a016 A022 SGE B103 B1-34 A008 b126 c216 c216 001
Text: E S C E L E C T R O N I C S CORP 30 3 7 2 5 7 00 0 0 4 Û Û Ö2T « E C E SGE D LOW PROFILE □IP DELAY LINES IO T A PS •14 PIN PACKAGE fi ii 7 I T T-H 1-Ì3 SERIES MIL-23 7 6 5 8 9 10 4 3 2 1 11 12 13 -.750 k030 -.010 14 ,3 0 0 _ MAX. .187 .065 :.010 .020
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IL-23
070MAX.
DIP16
ESC Electronics
ESC B104
a016
A022
SGE B103
B1-34
A008
b126
c216
c216 001
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