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    2SA1217

    Abstract: 7270 ic 2SC2877
    Text: "Sb TOSHIBA -CDISCRETE/OPTOD- dF | c1Dc172SD 0 0 D 7 2 7 D t. f .y 9 09 7250 2 S TO SHIBA A CD ISCRETE /OP T O 1 2 1 7 1 5òC 07270 S IL IC O N PNP E P IT A X IA L T Y PE PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER Unit in mm ' 7.7 MAX. LOW SPEED SWITCHING


    OCR Scan     		PDF c1Dc172SD 00D757D 2SA1217 2SC2877. 7270 ic 2SC2877

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G-idB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM4951-16 MW50580196 172SG TIM4951-16 c17250