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    C1825C Search Results

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    C1825C Price and Stock

    KEMET Corporation C1825C123JBGAC7800

    CAP CER 0.012UF 630V NP0 1825
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    DigiKey C1825C123JBGAC7800 Reel 3,000 1,000
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    C1825C123JBGAC7800 Cut Tape 995 1
    • 1 $2.1
    • 10 $1.616
    • 100 $1.2309
    • 1000 $0.98964
    • 10000 $0.98964
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    Avnet Americas C1825C123JBGAC7800 Reel 2,000 9 Weeks 1,000
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    Avnet Abacus C1825C123JBGAC7800 Reel 10 Weeks 1,000
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    KEMET Corporation C1825C103KCRAC7800

    CAP CER 10000PF 500V X7R 1825
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    DigiKey C1825C103KCRAC7800 Reel 2,000 1,000
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    C1825C103KCRAC7800 Cut Tape 34 1
    • 1 $1.66
    • 10 $1.051
    • 100 $0.7292
    • 1000 $0.59886
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    KEMET Corporation C1825C224K2RACTU

    CAP CER 0.22UF 200V X7R 1825
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1825C224K2RACTU Cut Tape 1,990 1
    • 1 $2.51
    • 10 $1.93
    • 100 $1.4702
    • 1000 $1.1821
    • 10000 $1.1821
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    C1825C224K2RACTU Reel 1,000 1,000
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    • 1000 $1.03434
    • 10000 $0.94199
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    KEMET Corporation C1825C223K5GAC7800

    CAP CER 0.022UF 50V C0G/NP0 1825
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1825C223K5GAC7800 Cut Tape 1,449 1
    • 1 $1.93
    • 10 $1.484
    • 100 $1.1304
    • 1000 $0.90884
    • 10000 $0.90884
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    C1825C223K5GAC7800 Reel 1,000 1,000
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    • 1000 $0.703
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    Avnet Abacus C1825C223K5GAC7800 Reel 11 Weeks 1,000
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    KEMET Corporation C1825C225J5RAC7800

    CAP CER 2.2UF 50V X7R 1825
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1825C225J5RAC7800 Cut Tape 1,437 1
    • 1 $6.03
    • 10 $4.109
    • 100 $3.087
    • 1000 $2.67152
    • 10000 $2.67152
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    Find more C1825C price and stock on Findchips.com

    C1825C Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C1825C100JCGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 10pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C100JHGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 10pF; Working Voltage (Vdc)[max]: 3000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C101FHGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 100pF; Working Voltage (Vdc)[max]: 3000V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C101JHGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 100pF; Working Voltage (Vdc)[max]: 3000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C101KCGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 100pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C101KDGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 100pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102FBGACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 1000PF 630V 1% NP0 1825 Original PDF
    C1825C102FGGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102JBGACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 1000PF 630V 5% NP0 1825 Original PDF
    C1825C102JGGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102JGGAC7800 KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: High Voltage; Unmarked Original PDF
    C1825C102JGGACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 1000PF 2KV 5% NP0 1825 Original PDF
    C1825C102JZGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102JZGAC7800 KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: High Voltage; Unmarked Original PDF
    C1825C102JZGACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 1000PF 2.5KV 5% NP0 1825 Original PDF
    C1825C102JZGAC-TU KEMET Ceramic Multilayer Capacitor; Capacitor Type:High Voltage; Capacitance:1000pF; Capacitance Tolerance:+/- 5%; Voltage Rating:2500VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1825; Termination:SMD RoHS Compliant: Yes Original PDF
    C1825C102KCRAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102KGGAC KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: High Voltage; Unmarked Original PDF
    C1825C102KGGAC7800 KEMET Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: High Voltage; Unmarked Original PDF
    C1825C102KGGACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 1000PF 2KV 10% NP0 1825 Original PDF
    ...

    C1825C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1825C394K2RAC Capacitor, ceramic, 0.39 uF, +/-10% Tol, 200V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		PDF C1825C394K2RAC

    Untitled

    Abstract: No abstract text available
    Text: C1825C105KARACTU aka C1825C105KARAC7800 Capacitor, ceramic, 1 uF, 10% Tol, 250V, X7R, 1825 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 6.40 1.5mm 0.60 +/-0.30 +/-0.40 0.15 +/-0.35 Powered by IntelliData.net Application: Capacitance:


    Original     		PDF C1825C105KARACTU C1825C105KARAC7800

    Untitled

    Abstract: No abstract text available
    Text: C1825C683K2RAC Capacitor, ceramic, 0.068 uF, +/-10% Tol, 200V, X7R, 1825 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 6.40 1.1 0.60 +/-0.30 +/-0.40 +/-0.15 +/-0.35 2006-2012 IntelliData.net Manufacturer: Capacitance: Chip Size: Voltage:


    Original     		PDF C1825C683K2RAC disclai00V

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1825C105K5RACTU C1825C105K5RAC7800 Capacitor, ceramic, 1 uF, +/-10% Tol, 50V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		PDF C1825C105K5RACTU C1825C105K5RAC7800) 26f5787d-f138-49e6-a386-a14cfa8baaa4

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1825C122KGGACTM C1825C122KGGAC7025 Capacitor, ceramic, 1200 pF, +/-10% Tol, 2000V, C0G, 1825 General Information Manufacturer: KEMET Electrical Specifications Capacitance: Chip Size: Voltage: Temperature Coefficient: Tolerance: Application:


    Original     		PDF C1825C122KGGACTM C1825C122KGGAC7025) ac65033b-b559-43d4-8ecd-a54089d02139

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1825C474J5RACTU C1825C474J5RAC7800 Capacitor, ceramic, 0.47 uF, +/-5% Tol, 50V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		PDF C1825C474J5RACTU C1825C474J5RAC7800) 1c43aaeb-f590-4940-bb58-db268afaa8b0

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    MCR50V107M8X11

    Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3

    Untitled

    Abstract: No abstract text available
    Text: a LC2MOS Latchable 4-/8-Channel High Performance Analog Multiplexers ADG428/ADG429 FEATURES 44 V Supply Maximum Ratings V SS to VDD Analog Signal Range Low On Resistance 60 ⍀ typ Low Power Consumption (1.6 mW max) Low Charge Injection (<4 pC typ) Fast Switching


    Original     		PDF ADG428/ADG429 DG428/DG429 ADG428 ADG429 C1825câ P-20A)

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6P21190HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3