Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C17E5D Search Results

    C17E5D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF c17E5D 100nA 250uA 00A/ys

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P ide = 42.5 dBm at 5.0 GHz to 5.3 GHz


    OCR Scan     		PDF TIM5053-16L MW50630196 M5053-16L 372S0