Untitled
Abstract: No abstract text available
Text: TOSHIBA T Q c1724fl 0020^03 SSfi TC551001BPL/BFL/BFIL/BTRL-70V/85V Ti «tf * K ^ y sB Cfl </ SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS
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1724fl
TC551001BPL/BFL/BFIL/BTRL-70V/85V
TC551001BPL
TC551001
TC551001BPL/BFL/BFTL/BTRL-70V/85V
OP32-P-525
SR01060795
TSOP32-P-0820
2fi114
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tc528257
Abstract: W640 SFC39 DIN 41162
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The
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TC528257
144WORDS
TC528257
144-words
512-words
-84UUHEB-fl-B
TC528257J/SZ/FT/TRâ
TC528257J/SZ/FT/TR-70
W640
SFC39
DIN 41162
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Untitled
Abstract: No abstract text available
Text: - TC74VHC595F/FN/FS 8 -BIT SHIFT REGISTER/LATCH 3 -STATE _ The TC74VHC595 is an advanced high speed 8 -BIT SHIFT REGISTER / LATCH fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74VHC595F/FN/FS
TC74VHC595
TCH724fl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA C2M0S Logic TC74HC/HCT Series TC74HC04AP/AF/AFN HEX Inverter TheTC74HC04A is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC/HCT
TC74HC04AP/AF/AFN
TheTC74HC04A
1724fl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.
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0Q2R00S
TC58A040F
TC58A040
NV04010196
OP28-P-45Q
0QETD31
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TC551001PL-85
Abstract: PM 7540 TC55100 TC551001 TC551001FL-85 FL-10 TC551001PL-10
Text: TOSHIBA 4ÛE D LOßlC/MEMORY • TOTTEMê m m m u r ^ D i 131,072 W ORDS X m {f £ — ä ilF L - « 8 B IT STATIC RAM DESCRIPTION The TC551001PL/FL is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5 V power supply.
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L06IC/MEÃ
DD25142
TC551001PL/FL
TC551001PL
0D221SG
TC551001PLâ
85/PLâ
TC551001
85/FLâ
DIP32
TC551001PL-85
PM 7540
TC55100
TC551001FL-85
FL-10
TC551001PL-10
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