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    C128 TRANSISTOR Search Results

    C128 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C128 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C128

    Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
    Text: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes


    Original     		PDF C1-28/C1-28Z C1-28 150oCNDS transistor C128 c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY 55FT

    transistor c128

    Abstract: c128 transistor ASI10791 C1-28 28c128
    Text: C1-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-28 is Designed for 28 Volt Class C Amplifier Applications up to 500 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: E • PG = 12 dB Typ. at 1.0 W/400 MHz • η C = 65 % Typ. at 1.0 W/400 MHz • Omnigold Metalization System


    Original     		PDF C1-28 C1-28 transistor c128 c128 transistor ASI10791 28c128

    transistor c128

    Abstract: c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128
    Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STC128M O-92M KST-1003-000 100mA 500mA, transistor c128 c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128

    transistor C128

    Abstract: c128 transistor transistor package TO-92M C128 STC128M
    Text: STC128M NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω Max. (IB=1mA)


    Original     		PDF STC128M O-92M KSD-T0B003-000 transistor C128 c128 transistor transistor package TO-92M C128 STC128M

    transistor c128

    Abstract: c128 transistor
    Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STC128M STC128M O-92M KST-I003-000 transistor c128 c128 transistor

    transistor c128

    Abstract: No abstract text available
    Text: STC128M NPN Silicon Transistor Features Low sat urat ion m edium current applicat ion Ext rem ely low collect or sat urat ion volt age Suit able for low volt age large current drivers High DC current gain and large current capabilit y Low on resist ance : RON= 0.6Ω Max. ( I B= 1m A)


    Original     		PDF STC128M O-92M KSD-T0B003-000 transistor c128

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PDF PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7

    TS PQ4 24

    Abstract: TM4C129LNCZAD
    Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PDF TM4C129L TS PQ4 24 TM4C129LNCZAD

    C134 transistor

    Abstract: No abstract text available
    Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		PDF LM4F232H5QD C134 transistor

    Ampire 128 x 64

    Abstract: Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD
    Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AF-128128KFIQY APPROVED BY DATE APPROVED BY Date : 2002/11/4 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY 1 RECORD OF REVISION Revision Date 2002/11/4 Date : 2002/11/4 Contents


    Original     		PDF AF-128128KFIQY HD66750S IST3168CA1 Ampire 128 x 64 Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD

    db3 c113

    Abstract: Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27
    Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AT-128128H1FI-00H APPROVED BY DATE † Approved For Specifications † Approved For Specifications & Sample APPROVED BY Date : 2003/2/21 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY


    Original     		PDF AT-128128H1FI-00H db3 c113 Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27

    SWITCHING TRANSISTOR C134

    Abstract: IC104 15l104 NTC cebi crystal oscillator KDS s104 diode sma TRANSISTOR c104 AN2772 MBC13900 MC13192DS
    Text: MC13192 Evaluation Board Reference Manual Document Number: MC13192EVBRM Rev. 1.2 09/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF MC13192 MC13192EVBRM CH370 RS-232 MC13192EVB. MAX3318E) MC9S08GT60 IC104 SWITCHING TRANSISTOR C134 15l104 NTC cebi crystal oscillator KDS s104 diode sma TRANSISTOR c104 AN2772 MBC13900 MC13192DS

    IC-106

    Abstract: IC104 TRANSISTOR c104 MBC13900 MC13192 MC9S08GT60 interfacing rs232 to zigbee IC106
    Text: MC13192 Evaluation Board Reference Manual MC13192EVBRM/D Rev. 1.0, 09/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 Japan: Freescale Semiconductor Japan Ltd.


    Original     		PDF MC13192 MC13192EVBRM/D RS-232 MC13192EVB. MAX3318E) MC9S08GT60 IC104 IC-106 TRANSISTOR c104 MBC13900 interfacing rs232 to zigbee IC106

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124

    IRGPC50FD2

    Abstract: No abstract text available
    Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50FD2 10kHz) O-247AC C-132 IRGPC50FD2

    transistor c114

    Abstract: No abstract text available
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead transistor c114

    600V 25A Ultrafast Diode

    Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
    Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50FD2 10kHz) O-247AC C-132 600V 25A Ultrafast Diode IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    transistor c128

    Abstract: 55FT
    Text: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This


    OCR Scan     		PDF C1-28/C1-28Z Cl-28 transistor c128 55FT

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
    Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.


    OCR Scan     		PDF 01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc

    D773

    Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
    Text: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		PDF SGSP368/P369 SGSP468/P469 SGSP568/P569 SP368 SP468 SP568 SP369 SP469 SP569 C-130 D773 P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SGSP469 sgsp468

    IRGPC50FD2

    Abstract: No abstract text available
    Text: PD - 9.800 International li«] Rectifier IRGPC50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF 10kHz) IRGPC50FD2 C-131 O-247AC C-132 IRGPC50FD2

    Untitled

    Abstract: No abstract text available
    Text: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC50FD2 10kHz) C-131 SS45E D01TJE1 O-247AC

    1RFD123

    Abstract: 1RFD120
    Text: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF T-35-25 C-127 IRFD120, IRFD123 S545E G0Gfl37c C-128 1RFD123 1RFD120