MSC81111
Abstract: S010
Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
|
Original
|
PDF
|
MSC81111
MSC81111
S010
|
MSC81111
Abstract: S010 v5052
Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
|
Original
|
PDF
|
MSC81111
MSC81111
S010
v5052
|
MSC81005
Abstract: No abstract text available
Text: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016
|
Original
|
PDF
|
MSC81005
MSC81005
|
MSC81005
Abstract: No abstract text available
Text: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016
|
Original
|
PDF
|
MSC81005
MSC81005
|
MSC81111
Abstract: S010 C127318A
Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010
|
Original
|
PDF
|
MSC81111
MSC81111
S010
C127318A
|