MSC82010
Abstract: S010
Text: MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL S010 hermetically sealed ORDER CODE
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MSC82010
MSC82010
S010
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MSC82304
Abstract: S010
Text: MSC82304 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 3.8 W MIN. WITH 10.0 dB GAIN .250 2LFL S010 hermetically sealed
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MSC82304
MSC82304
S010
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82306
Abstract: 3 w RF POWER TRANSISTOR NPN MSC82306 S010
Text: MSC82306 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . PRELIMINARY DATA REFRACTORY\GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 5.5 W MIN. WITH 9.6 dB GAIN .250 2LFL S010 hermetically sealed
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MSC82306
MSC82306
82306
3 w RF POWER TRANSISTOR NPN
S010
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MSC82003
Abstract: S010
Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82003
MSC82003
S010
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MSC83301
Abstract: S010
Text: MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL S010
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MSC83301
MSC83301
S010
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MSC82003
Abstract: S010
Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82003
MSC82003
S010
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MSC82005
Abstract: S010
Text: MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82005
MSC82005
S010
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MSC82003
Abstract: S010
Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE P OUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82003
MSC82003
S010
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MSC83301
Abstract: S010
Text: MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL S010
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MSC83301
MSC83301
S010
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82306
Abstract: MSC82306 S010
Text: MSC82306 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . PRELIMINARY DATA REFRACTORY\GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.5 W MIN. WITH 9.6 dB GAIN .250 2LFL S010 hermetically sealed
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MSC82306
MSC82306
82306
S010
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MSC82010
Abstract: S010 RF NPN POWER TRANSISTOR 2.5 GHZ
Text: MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL S010 hermetically sealed ORDER CODE
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MSC82010
MSC82010
S010
RF NPN POWER TRANSISTOR 2.5 GHZ
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MSC83301
Abstract: S010
Text: MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL S010
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MSC83301
MSC83301
S010
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: MSC82005 S010
Text: MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE P OUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82005
MSC82005
RF NPN POWER TRANSISTOR 2.5 GHZ
S010
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82307
Abstract: MSC82307 S010
Text: MSC82307 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE P OUT = 7.0 W MIN. WITH 9.6 dB GAIN .250 2LFL S010 hermetically sealed
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MSC82307
MSC82307
82307
S010
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MSC82005
Abstract: S010
Text: MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL S010
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MSC82005
MSC82005
S010
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82307
Abstract: MSC82307 S010
Text: MSC82307 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 20:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 7.0 W MIN. WITH 9.6 dB GAIN .250 2LFL S010 hermetically sealed
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MSC82307
MSC82307
82307
S010
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sgs RF NPN POWER TRANSISTOR 3 GHZ
Abstract: No abstract text available
Text: SGS-THOMSON :IL[i g?GMD § MSC82003 RF & MICROWAVE TRANSISTO RS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . REFRACTORY/GOLD METALLIZATION ■ HERMETIC STRIPAC PACKAGE . P out = 3.0 W MIN. WITH 7.8 dB GAIN
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MSC82003
MSC82003
sgs RF NPN POWER TRANSISTOR 3 GHZ
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d 5071 transistor
Abstract: No abstract text available
Text: SGS-THOMSON :IL[i g?GMD § M SC 82005 RF & MICROWAVE TRANSISTO RS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . REFRACTORY/GOLD METALLIZATION ■ HERMETIC STRIPAC PACKAGE - P out = 5.0 W MIN. WITH 7 .0 dB GAIN
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MSC82005
d 5071 transistor
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Untitled
Abstract: No abstract text available
Text: /S 7 * 7# . S G S -T H O M S O N H O W H L H g T T M O ig i M S C 83301 RF & M ICROW AVE TR AN SISTO RS G ENERAL P U R P O S E AM PLIFIER APPLIC ATIO N S . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE
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MSC83301
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Untitled
Abstract: No abstract text available
Text: SGS-1H0MS0N MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AM PLIFIER APPLICATIONS EMITTER BALLASTED VSWR CAPABILITY oo:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC ST RIPAC PACKAGE P o u t = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz PIN CONNECTION
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MSC82003
MSC82003
C125518
J135021C
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81 210 w 25 is which transistor
Abstract: No abstract text available
Text: / T T S G S -T H O M S O N ^7# MSC83301 RF & MICROWAVE TRANSISTO RS GENERAL P U R P O S E AMPLIFIER APPLICATIONS • REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE . P out = 1.0 W MIN. WITH 7.0 dB GAIN
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MSC83301
MSC83301
81 210 w 25 is which transistor
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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