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    MSC82003 Search Results

    MSC82003 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSC82003 Advanced Semiconductor Transistor Original PDF
    MSC82003 STMicroelectronics GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    MSC82003 STMicroelectronics GENERAL PURPOSE AMPLIFIER APPLICATIONS RF and M Original PDF
    MSC82003 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MSC82003 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    MSC82003 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    MSC82003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MSC82003

    Abstract: S010
    Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010


    Original     		MSC82003 MSC82003 S010 PDF

    MSC82003

    Abstract: S010
    Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC PACKAGE POUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010


    Original     		MSC82003 MSC82003 S010 PDF

    MSC82003

    Abstract: No abstract text available
    Text: MSC82003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC82003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 3 W/ 2,000 MHz


    Original     		MSC82003 MSC82003 PDF

    MSC82003

    Abstract: S010
    Text: MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC  PACKAGE P OUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL S010


    Original     		MSC82003 MSC82003 S010 PDF

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


    Original     		AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit PDF

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent PDF

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier PDF

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 PDF

    MSC81002

    Abstract: common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118
    Text: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as


    Original     		MSC81002 MSC81118 MSC82005 MSC82010 MSC82302 MSC82304 MSC82306 MSC82307 MSC83301 MSC83303 MSC81002 common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118 PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 PDF

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


    Original     		BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y PDF

    SO42

    Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
    Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520


    Original     		PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100 PDF

    2 way antenna splitter, circuit diagram

    Abstract: radar block diagram AN1225 x band radar transmitters air surveillance system diagram using radar AM1011-300 AM80912-005 AM80912-015 AM80912-030 AM80912-085
    Text: AN1225 APPLICATION NOTE RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Anthony T. Harris 1. ABSTRACT By designing in high levels of emitter ballasting, power transistors can achieve good thermal stability without reducing the collector efficiency. This is important for the interrogators and transponders used with


    Original     		AN1225 2 way antenna splitter, circuit diagram radar block diagram AN1225 x band radar transmitters air surveillance system diagram using radar AM1011-300 AM80912-005 AM80912-015 AM80912-030 AM80912-085 PDF

    circuit diagram electronic ballast for 40W tube

    Abstract: air surveillance system diagram using radar circuit diagram electronic choke for tube light radar circuit modulator an1225 2 way antenna splitter, circuit diagram Types of Radar Antenna Radar Transponder interrogator radar system with circuit diagram
    Text: AN1225 APPLICATION NOTE RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Anthony T. Harris 1. ABSTRACT By designing in high levels of emitter ballasting, power transistors can achieve good thermal stability without reducing the collector efficiency. This is important for the interrogators and transponders used with


    Original     		AN1225 circuit diagram electronic ballast for 40W tube air surveillance system diagram using radar circuit diagram electronic choke for tube light radar circuit modulator an1225 2 way antenna splitter, circuit diagram Types of Radar Antenna Radar Transponder interrogator radar system with circuit diagram PDF

    sgs RF NPN POWER TRANSISTOR 3 GHZ

    Abstract: No abstract text available
    Text: SGS-THOMSON :IL[i g?GMD § MSC82003 RF & MICROWAVE TRANSISTO RS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . REFRACTORY/GOLD METALLIZATION ■ HERMETIC STRIPAC PACKAGE . P out = 3.0 W MIN. WITH 7.8 dB GAIN


    OCR Scan     		MSC82003 MSC82003 sgs RF NPN POWER TRANSISTOR 3 GHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0MS0N MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AM PLIFIER APPLICATIONS EMITTER BALLASTED VSWR CAPABILITY oo:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC ST RIPAC PACKAGE P o u t = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz PIN CONNECTION


    OCR Scan     		MSC82003 MSC82003 C125518 J135021C PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    MSC81111

    Abstract: MSC83301 SOLO 15 MSC81002 MSC81005 MSC81010 MSC81020 MSC81058 MSC81118 MSC81402
    Text: SILICON POWER TRANSIS TORS MICROWAVE TFtANSiSK This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as


    OCR Scan     		MSC81002 MSC81118 MSC81005 MSC81111 MSC81406 MSC82001 MSC82003 MSC82005 MSC82010 MSC82302 MSC83301 SOLO 15 MSC81010 MSC81020 MSC81058 MSC81402 PDF

    PT8811

    Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
    Text: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,


    OCR Scan     		BAM20 2N5642 B25-12 2N6082 2N6084 MSC2304 TH2304 PT8809 SD1134 2N5689 PT8811 PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


    OCR Scan     		302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811 PDF

    PT8740

    Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
    Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72


    OCR Scan     		T8710 SD1238 2N5126 2N918 2N5642 BM100-28 MM1603 MRF633 SD1145 PT8717 PT8740 PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828 PDF

    SD1076

    Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
    Text: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6


    OCR Scan     		BAM20 2N5642 B25-12 2N60822N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1076 MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510 PDF

    3570 1301

    Abstract: MRF245 PT8828 ad 40282 PT9780 CM45-12A BLX66 pt8710 2N4932 2N5913
    Text: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)


    OCR Scan     		2N918 BFP92 cb-233 3570 1301 MRF245 PT8828 ad 40282 PT9780 CM45-12A BLX66 pt8710 2N4932 2N5913 PDF