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    KEMET Corporation C12065C103K5RAC7800

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    Bristol Electronics C12065C103K5RAC7800 1,450
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    C12065C Datasheets Context Search

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    c12065C

    Abstract: No abstract text available
    Text: Document Number: MRF6S19100N Rev. 3, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100NR1 MRF6S19100NBR1 LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19100N IS--95 MRF6S19100NR1 MRF6S19100NBR1 MRF6S19100N c12065C

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    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 3, 12/2010 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100NR1 MRF6S19100NBR1 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19100N MRF6S19100NR1 MRF6S19100NBR1 IS--95 MRF6S19100NR1

    c12065C

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19100N MRF6S19100NBR1 MRF6S19100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100NR1 MRF6S19100NBR1 Designed for N- CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19100N MRF6S19100NR1 MRF6S19100NBR1 MRF6S19100NR1 c12065C A113 A114 A115 AN1955 C101 JESD22 MRF6S19100N MRF6S19100NBR1