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    C111 TRANSISTOR Search Results

    C111 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    C111 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PDF PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    FRD070IF40-A

    Abstract: FRD070IF40-A-T C-118
    Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for


    Original     		PDF STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118

    transistor c111

    Abstract: C111 transistor
    Text: 11.3 Gbps Optical Receiver ADN3010-11 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3010-11 50Ω 50Ω OUT+ OUT– POWER MONITOR GND PM 11858-001 Integrated SiGe PIN photodiode, transimpedance amplifier TIA , and limiting amplifier (LA) Power monitor output: 1.0 A/W at O band wavelengths


    Original     		PDF ADN3010-11 PRBS31 11-Pad C-11-1 D11858-0-1/15 transistor c111 C111 transistor

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		PDF STM32 STM32F407ZG STM32,

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    2N7002DICT-ND

    Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
    Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3


    Original     		PDF TPS5210EVM-116 TPS5210EVM-116 SLVP116DB SLVP116DB2 TPS5210 2N7002DICT-ND 16SP270M schematic main board J102 fet 4SP820M T TPS5210 ECSH1CD226R capacitor 4700 uF 50V X7R murata

    cctv camera circuit diagram

    Abstract: transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic
    Text: Multi-CH Power Supply IC for Color CCD Camera www.ad-tech.co.kr ADT7210 General Description The ADT7210 is system specific power IC that is suitable for color CCD camera. ADT7210 0638 Other features include over-current protection, UVLO and thermal shutdown. It reduces design


    Original     		PDF ADT7210 ADT7210 28MLF, cctv camera circuit diagram transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic

    juchheim temperature controller 703011

    Abstract: 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015
    Text: JdTRON 16.1 Compact microprocessor controller B 70.3011 Operating Manual 07.01/00346816 ! ! E Please read this Manual carefully before starting up the instrument. Keep this Manual in a place which is at all times accessible to all users. Please assist us to improve this Manual


    Original     		PDF 1-800-554-JUMO juchheim temperature controller 703011 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015

    500w car audio amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary


    Original     		PDF RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram

    TRANSISTOR C-111

    Abstract: ISL55005 ISL55007 ISL55008 ISL55009 ISL55010 ISL55011 ISL55011IEZ-T7
    Text: ISL55011 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55011 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 TRANSISTOR C-111 ISL55005 ISL55007 ISL55009 ISL55010 ISL55011IEZ-T7

    30g 123

    Abstract: TRANSISTOR C-111 ISL55012 ISL55013 ISL55013IEZ-T7 ISL55014 ISL55015
    Text: ISL55013 ESIGNS NEW D R O F D PART E MMEND PLACEMENT O C E R E DR N OT MENDE L55014 Data Sheet R E C OM IS February 13, 2007 FN6283.0 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55013 is a high performance gain block featuring a Darlington configuration using high fT transistors and


    Original     		PDF ISL55013 ISL5501 FN6283 ISL55013 ISL55012 ISL55015 ISL55014 31dBm 30g 123 TRANSISTOR C-111 ISL55013IEZ-T7

    p367

    Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
    Text: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP363/P367 SGSP463/P467 SGSP563/P567 SGSP363 SGSP463 SGSP563 O-220 OT-93 SGSP367 SGSP467 p367 P467 sgsp567 P3B7 ic isd 1932

    STP3N60

    Abstract: stp3n60xi ISOWATT221
    Text: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		PDF STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221

    Untitled

    Abstract: No abstract text available
    Text: hrtemational IM ] Rectifier P D - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC30FD2 10kHz) O-247AC C-116 SS452

    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF 00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7