C14A
Abstract: AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500
Text: AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125E
AGR21125EU
AGR21125EF
M-AGR21125F
AGR21125XF
12-digit
C14A
AGR21125EF
AGR21125EU
C10A
C11A
C12A
C12D
JESD22-C101A
sm 4500
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AGR21125End
sm 4500
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transmitter 446 mhz
Abstract: R5B transistor J960 470-860 mhz Power amplifier w
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372
transmitter 446 mhz
R5B transistor
J960
470-860 mhz Power amplifier w
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RO3010
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
RO3010
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C15B material sheet
Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125E
AGR21125EU
AGR21125EF
DS04-166RFPP
DS04-108RFPP)
C15B material sheet
C14A
AGR21125EF
AGR21125EU
C10A
C11A
C12A
C12D
JESD22-C101A
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PDF
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
transistor R1A 37
5233 mosfet
J146
VJ1210y
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
C3B Kemet
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RF POWER MOSFET
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AG210-12,
DS04-108RFPP
DS04-038RFPP)
RF POWER MOSFET
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PDF
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C3B Kemet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372/D
31anufacture
MRF372
C3B Kemet
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PDF
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j1430
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372R5
j1430
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PDF
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MRF372
Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372
MRF372D
C14A
473 coilcraft d
variable resistor 0224 25 ohm
c7a series vishay capacitor
RO3010
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372/D
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PDF
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C14A
Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372/D
MRF372
C14A
MRF372
R5B transistor
C10A
473 coilcraft d
j937
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balun 75 ohm
Abstract: C14A RO3010 MRF372 c9ab
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
balun 75 ohm
C14A
RO3010
MRF372
c9ab
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part marking information vishay HD 1
Abstract: l1a marking MRF372R5
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R3
MRF372R5
MRF372
part marking information vishay HD 1
l1a marking
MRF372R5
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R10B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
R10B
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R4A marking
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
R4A marking
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RO3010
Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372R3
MRF372R5
MRF372R3
MRF372
RO3010
marking c14a
marking R5b
device L1a marking
L1A marking on device
marking r4b diode
C14A
marking us capacitor pf l1
R4A print
MRF372
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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marking c14a
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
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MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
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MRF372
Abstract: C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372R5
MRF372
C14A
MRF372R5
transmitter 446 mhz
TRANSISTOR 1003
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marking c14a
Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
marking R5b
R5B transistor
RO3010
MRF372
marking L4A
C14A
device L1a marking
L1A marking on device
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PDF
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Untitled
Abstract: No abstract text available
Text: 92D 00385 1989963 C E N T R A L SEM I C O N D U C T O R ^5 1~~ % j. 3 3 ~ o 2/ TIP33» A, B, C NPN TIP34, A, B, C PNP BE i n f i n t 3 ffOOOBflS 2 Kö&Äft[f8e3i8 t@r eerp. CSEltPSSß D • COMPLEMENTARY SILICON POWER TRANSISTORS S@3fsSg itiii0efi@Pe@rp.
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OCR Scan
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TIP33Â
TIP34,
O-218
TIP34
C-10A,
TIP33B
TIP34B
TIP33A
TIP34A
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PDF
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diode t25 4 L8
Abstract: diode t25 4 HO
Text: MITSUBISHI TRANSISTOR M O D U LES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE • Ic • Vcex Collector current.15A Coliector-emitter voltage.1000V • hFE DC current gain . 75 • Insulated Type
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QM15TB-2H
E80276
E80271
diode t25 4 L8
diode t25 4 HO
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