BC Z5U 1KV
Abstract: kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02
Text: Manufacturer’s Cross Reference and Multilayer Ceramic Chip Capacitor Part Numbering P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-6652 www.kemet.com F3068H 10/05 KEMET Includes Commercial, High voltage, Open mode, COTS, Medical, and Military
|
Original
|
PDF
|
F3068H
GR900
MIL-PRF-55681
CDR01-CDR06
MIL-PRF-55681-Metricowloon
BC Z5U 1KV
kyocera hc1
hr 8445
B37941K5103K062
GRM21BR71H103KA01L
Fenghua safety capacitors
0805X7R103KT2AT
Fenghua
2A104K
a88 w02
|
QFP-240
Abstract: RM73B2BT000 16L8 74HC04 IC-74 SOIC16 TNETA1500 TNETA1570 avx c0805c103k5rac HLMP3502-010
Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1570/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE *4atm@.ti.com
|
Original
|
PDF
|
TNETA1570/TNETA1500
TNETA1570
TNETA1500
Instrument01-010
HLMP3502-010
C1206C104K5RAC
QFP-240
RM73B2BT000
16L8
74HC04
IC-74
SOIC16
avx c0805c103k5rac
HLMP3502-010
|
INDUCTOR 220uH
Abstract: QFP240 C7343 RK73H2BT1000F Kemet r76 AS7C512-15JC CONN1X2 QFP-240 TNETA1570 National 74hc04
Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1575/TNETA1585 & TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A June 27, 1996 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE
|
Original
|
PDF
|
TNETA1575/TNETA1585
TNETA1500
TNETA1575
TNETA1570
TNETA1500
Te20A07PTM00
TIBPAL16L8-15FCN
plcc20
INDUCTOR 220uH
QFP240
C7343
RK73H2BT1000F
Kemet r76
AS7C512-15JC
CONN1X2
QFP-240
National 74hc04
|
CW20C104K
Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,
|
Original
|
PDF
|
AGA100M050
SKA100M050
AGA100M063
SKA100M063
AFK477M10F24T
AFK686M16D16T
AFK107M16D16T
AFK157M16X16T
AFK158M16H32T
AFK226M16C12T
CW20C104K
CL31B104KBNC
CY20C104M
474j capacitor
CL31B102KBNC
UP36BA0350
CW15C103K
ECPU01105MA5
CL21B104KBNC
CW20C473K
|
HLMP-3502-010
Abstract: HLMP3502-010 RM73B2BT000J 213-032-602 hs106-nd 74ACT72241-15ns murata sar 213032602 TSW-114-07-T-S HFBR-5205
Text: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1561/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETE TECHNICAL SUPPORT LINE *4atm@.ti.com
|
Original
|
PDF
|
TNETA1561/TNETA1500
TNETA1561
TNETA1500
InstrumentTDC1561A
TDC1500A
HFBR-5205
MCM6206D
HLMP-3502-010
HLMP3502-010
RM73B2BT000J
213-032-602
hs106-nd
74ACT72241-15ns
murata sar
213032602
TSW-114-07-T-S
HFBR-5205
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
|
Original
|
PDF
|
MMRF1304N
MMRF1304NR1
MMRF1304GNR1
MMRF1304NR1
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
|
Original
|
PDF
|
MMRF1304L
MMRF1304LR5
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
|
Original
|
PDF
|
MMRF1304N
MMRF1304NR1
MMRF1304GNR1
MMRF1304NR1
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
MW7IC008N
|
ATC600S3R3BT250XT
Abstract: J376 MW7IC008 vgls
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
ATC600S3R3BT250XT
J376
MW7IC008
vgls
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
|
Original
|
PDF
|
AFT09MS015N
AFT09MS015NT1
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
MW7IC008N
|
MW7IC008N
Abstract: MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
MW7IC008N
MW7IC008NT1
AN1955
AN1977
AN1987
0603HC-1N6XJLW
L7150
ATC600S3R3BT250XT
J3234
|
ATC600S3R3BT250XT
Abstract: ON SEMICONDUCTOR J122
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
ATC600S3R3BT250XT
ON SEMICONDUCTOR J122
|
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
|
Original
|
PDF
|
AFT09MS015N
AFT09MS015NT1
|
ATC600S3R3BT250XT
Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage
|
Original
|
PDF
|
MW7IC008N
MW7IC008NT1
MW7IC008N
ATC600S3R3BT250XT
MW7IC008NT1 Test Circuit Component Layout
ATC600S2R
MW7IC008NT1
AN1987
3843
GRM3195C1E103JA01
ATC600S2R2CT250XT
A115
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
|
Original
|
PDF
|
AFT09MS015N
AFT09MS015NT1
|
TKP 470 M
Abstract: No abstract text available
Text: Reference Design Evaluation Board for flowIPM 1B Power Modules EVA P95x for flowIPM 1B Reference Design no.: RD_2011-03_002-v02 Table of Contents 1 In tr o d uc t i o n . E rr or ! Boo km a rk not def ine d.
|
Original
|
PDF
|
002-v02
Mec05,
10ppm
TKP 470 M
|
AFT504
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
|
Original
|
PDF
|
AFT05MS004N
AFT05MS004NT1
AFT504
|
ATC100B471JT200XT
Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
|
Original
|
PDF
|
MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25N
ATC100B471JT200XT
EB-38
651AT
ATC100B181JT300XT
ATC100B4R3CT500XT
CDR33BX104AKWY
C5750KF1H226ZT
Fair-Rite ATC
MRFE6VS25NR1
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
|
Original
|
PDF
|
MRFE6VS25N
MRFE6VS25NR1
25cale
|
A5M06
Abstract: Transistor Z17
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
|
Original
|
PDF
|
AFT05MS006N
AFT05MS006NT1
A5M06
Transistor Z17
|
A5M0
Abstract: IC 2 5/A5M06
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
|
Original
|
PDF
|
AFT05MS006N
AFT05MS006NT1
A5M0
IC 2 5/A5M06
|
RM73B2B
Abstract: eta trw bead murata RM73B2BT102J VJ21 HLMP3301-010 HLMP3502 RM73B3A qi 20pin HFBR-5205
Text: I TEXAS INSTRUMENTS Semiconductor Group TNETA1561/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155-Mbit/s, Multimode Fiber Connector SD N V007 July 12,1995 Questions should be directed to: TNETA TECHNICAL SUPPORT LINE *4atm@.ti.com
|
OCR Scan
|
PDF
|
TNETA1561/TNETA1500
155-Mbit/s,
SDNV007
TNETA1561
TNETA1500
TNETA1561
SDNS01
9E668
RM73B2B
eta trw
bead murata
RM73B2BT102J
VJ21
HLMP3301-010
HLMP3502
RM73B3A
qi 20pin
HFBR-5205
|