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    JE4353

    Abstract: 2U 34 mje4343 motorola MJE4340
    Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    OCR Scan     		PDF MJE4340 MJE4341 MJE4342 MJE4343 MJE4351 MJE4352 MJE4353 JE4353 2U 34 mje4343 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC 6367254 IXSTRS/R FJ MOTOROLA SC T b CXSTRS/R F D f ~ | h 3 t 7 2 S 4 O O Ô 1 1 1 D D _ 96D 8 1 1 1 0 T - 3 3 MOTOROLA 1 5 PNP NPN MJ15001 Mi15002 SEMICONDUCTOR TECHNICAL DATA 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS


    OCR Scan     		PDF MJ15001 Mi15002 J15001 J15002 BREAK00WN C01LECT0REMITT6R

    Motorola D45

    Abstract: 80880 d45e s45e
    Text: MOTOROLA SC r 6367254 -CXSTRS/R F> MOTOROLA SC It CXSTRS/R ti| l,3 t7 a S 4 96D 808 80 F D DDBQâêü 7^. 3 3 - _ NPN D44E Series PNP D45E Series MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA COM PLEM ENTARY SILICO N POWER DARLINGTON TR A N SISTO R S


    OCR Scan     		PDF 3b72S4 V01TS) Motorola D45 80880 d45e s45e

    ED-96

    Abstract: ed96 curvas transistor AN-415 MJ4200 MJ4201 MJ4210 MJ4211
    Text: MJ4200, MJ4201, MJ4210, MJ4211 continued F IG U R E 4 - T H E R M A L R E S P O N S E 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t.TIME(ms) 20 50 F IG U R E 5 - A C T IV E -R E G IO N S A F E O P E R A T IN G A R E A 100 200 500 1000 2000 NOTE C om puting Peak Junction Temperature


    OCR Scan     		PDF MJ4200, MJ4201, MJ4210, MJ4211 200oC. AN-415) ED-96 ed96 curvas transistor AN-415 MJ4200 MJ4201 MJ4210 MJ4211

    LT1817 transistor

    Abstract: LT1817
    Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR


    OCR Scan     		PDF LT1817 14E1G C01LECT0R-8ASE LT1817 transistor LT1817

    Untitled

    Abstract: No abstract text available
    Text: PHOTO TRANSISTOR ^ marktech STTÌbSS DOQGMIQ T 1ÖE D international MTD6140 SILICON NPN EPITAXIAL PLANAR TENTATIVE SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P TIC A L SW ITCH • TAPE, C A R D R E A D E R S • V E L O C IT Y S E N S O R


    OCR Scan     		PDF MTD6140 MTE1080. MTE1060 C01LECT0R

    bus97

    Abstract: lsoa lb134
    Text: M O T O R O L A SC { X S T R S / R F3- r 6367254 1b MOTOROLA SC XSTR S/R F D^jb3t,755M DDÖ07S3 96D 8 0 7 5 3 D T MOTOROLA 33 - BUS97 BUS97A SEMICONDUCTOR TECHNICAL DATA 18 AMPERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICO N POWER TRA N SISTO RS


    OCR Scan     		PDF F36367254 BUS97 BUS97A BUS97A lsoa lb134

    2N5430 MOTOROLA

    Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
    Text: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5428 2N5430 O-213AA C01LECT0R-EMITTER 2N5430 MOTOROLA 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428

    MJE2011

    Abstract: MJE2021 MJE2020 MJE-2020 MJE2010
    Text: MJE2010, MJE2011 PNP SILICON MJE2020, MJE2021 NPN 5.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 40-60 VOLTS 80 WATTS . . . designed for use in general-purpose amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VcE(sat) ” 1-0 Vdc (Max) @ l c * 3.5 Ade


    OCR Scan     		PDF MJE2010, MJE2011 MJE2020, MJE2021 MJE2010 MJE2020 MIE3021 MJE-2020

    MTD6140

    Abstract: MTE1080 SOURCE-MTE1060 CI400
    Text: PHOTO TRANSISTOR ^ 41-U marktech STTÌbSS DOQGMIQ T 1ÖE D international MTD6140 SILICON NPN EPITAXIAL PLANAR TENTATIVE SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P T IC A L S W IT C H • TAPE, C A R D R E A D E R S • V E L O C IT Y S E N S O R


    OCR Scan     		PDF MTD6140 MTE1080. Ta-25 SOURCE-MTE1060 RL-10II9| Rl-1000. MTD6140 MTE1080 SOURCE-MTE1060 CI400

    MPSU01

    Abstract: MPS-U01 MPS-U51 MPS-U01A MPS-U51A 2sc 724 mpsu01A MPSU51A transistor mpsu01 mpsu-01
    Text: MPS-UOl SILICON MPS-U01A NPN SILICON ANNULAR TRANSISTORS . . » designed for complementary symmetry audio circuits to 10 Watts output. • Excellent Current Gain Linearity — 1.0 mAdc to 1.0 Adc • Low Collector-Emitter Saturation Voltage — VcE(sat) = 0. 5Vdc (Max) @ lc = 1-0 Adc


    OCR Scan     		PDF MPS-U51 MPS-U51A MPSU01 MPS-U01 MPS-U01A MPS-U51A 2sc 724 mpsu01A MPSU51A transistor mpsu01 mpsu-01

    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


    OCR Scan     		PDF BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog