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    C 828 R TRANSISTOR Search Results

    C 828 R TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 828 R TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte

    3654A

    Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte 128-byte 3654A at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0

    2SK1828

    Abstract: 2SK182
    Text: TOSHIBA 2SK1828 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S TYPE 2 S K 1 828 H IG H SPEED S W IT C H IN G A P P L IC A T IO N S A N A L O G S W ITC H A P P L IC A T IO N S 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V


    OCR Scan     		PDF 2SK1828 10//S 2SK1828 2SK182

    SF 829 B

    Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
    Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)


    OCR Scan     		PDF SF827 SF829 SF82B SF82S SF 829 B SF819 sf 829 d SF126 SF826 sf829c SF816 SF 827 d

    .W07B

    Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
    Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s


    OCR Scan     		PDF 2SB828/2SD1064 0V/12A 2SB828 2SD1064 .W07B W07b 722G 2SB82B as1012

    Untitled

    Abstract: No abstract text available
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.09 0.48 1 0.38 1 1 3 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 I 2.4 I1 .


    OCR Scan     		PDF BF840 BF841

    R005 FZ

    Abstract: transistors C 828 BF841 BF840 ic MARKING FZ
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4


    OCR Scan     		PDF BF840 BF841 BF840 R005 FZ transistors C 828 BF841 ic MARKING FZ

    transistors BC 543

    Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
    Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,


    OCR Scan     		PDF Q62702-D1303 Q62702-D13Q4 Q62702-D1179 Q62702-D1257 Q62702-D1307 Q62702-D1308 Q62702-D61 Q62702-D1312 Q62702-D1313 Q62702-D1238 transistors BC 543 BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:


    OCR Scan     		PDF

    828BD

    Abstract: BD NPN transistors BD 826 NPN
    Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60


    OCR Scan     		PDF 00142bQ 828BD BD NPN transistors BD 826 NPN

    2SD1741

    Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604
    Text: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity


    OCR Scan     		PDF 2SD1741, 2SD1741A 2SD1741 2SD1741A 3Efl52 2SB1171 2SB1171A ic 4604 tc 4604

    transistors C 828

    Abstract: BF840
    Text: CDU BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors M arking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ' ABSOLUTE M AXIM UM RATIN GS BF840 Collector-base voltage open emitter


    OCR Scan     		PDF BF840 BF841 BF840 BF841 transistors C 828

    Untitled

    Abstract: No abstract text available
    Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220


    OCR Scan     		PDF MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 00CH42

    SOT23 marking 828

    Abstract: 46 marking
    Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3


    OCR Scan     		PDF Q62702-C1493 Q62702-C1475 OT-23 BCV26 BCV46 SOT23 marking 828 46 marking

    Untitled

    Abstract: No abstract text available
    Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the


    OCR Scan     		PDF QCA100BA60 E76102 200ns)

    3N171

    Abstract: VN10MA C 828
    Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 3N171 VN10MA C 828

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03.6 ± 0.2 10.3MAX-


    OCR Scan     		PDF 2SK2866 0-54n --10A,

    Siren Sound Generator circuit diagram

    Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound
    Text: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed


    OCR Scan     		PDF UM3561A UM3561A 200Ko 240Kn 2SC9013or8050 2SC9013or8050 1780u UM3561 Siren Sound Generator circuit diagram internal circuit of UM3561 siren police diagram circuit diagram of police siren 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound

    diode U1J

    Abstract: 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J
    Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : RßS (ON) = 0-540 (Typ.)


    OCR Scan     		PDF 2SK2866 VDD-400V, diode U1J 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J

    bd 825 10

    Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
    Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,


    OCR Scan     		PDF Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device


    OCR Scan     		PDF 3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3


    OCR Scan     		PDF 2SK2866 20kil)

    dta144es

    Abstract: DTA144EU
    Text: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch


    OCR Scan     		PDF DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV DTA144ES DTA144EU dta144es DTA144EU