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    C 5252 TRANSISTOR Search Results

    C 5252 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 5252 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Driver

    Abstract: S1D15605D11B k 3918 regulator D1565 k 3918 TRANSISTOR S1D15606 S1D15607 5252 F 1114 S1D15605D00B S1D15606D01B
    Text: S1D15605 Series Technical Manual Rev.2.4a NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF S1D15605 m4-6093 E-08190 Driver S1D15605D11B k 3918 regulator D1565 k 3918 TRANSISTOR S1D15606 S1D15607 5252 F 1114 S1D15605D00B S1D15606D01B

    S1D15605

    Abstract: S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565
    Text: 8. S1D15605 Series Rev. 2.4a Contents 1. DESCRIPTION . 8-1 2. FEATURES . 8-1


    Original     		PDF S1D15605 S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original     		PDF MG1200V1US51/ MG1800V1US51 MG1200V1us51

    STR 6307

    Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
    Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.


    Original     		PDF 500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original     		PDF MG1200V1US51/ MG1800V1US51

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module

    S-AV17

    Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079

    S-AU80

    Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic

    TPC6801

    Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
    Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance


    Original     		PDF TPS820 TPS820

    c 5252 transistor

    Abstract: No abstract text available
    Text: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance


    Original     		PDF TPS820 TPS820 c 5252 transistor

    500w inverter circuit diagram

    Abstract: inverter 1000w 12v dc to 220v ac circuit diagram Design 1000W inverter using 2 parallel transformer main inverter transformer 1000W SCR 40A 600V 500w Full bridge transformer block diagram of dual 12v power supply power supply hv laser co2 5v dc to 110v ac 400 hz inverter SCR firing inverter circuit
    Text: a .I.e . s y s t e m s , in c . 1 5 0 H o m e r Av e n u e As h l a n d . M A 0 1 7 2 1 50B-881-5252 TELEX 9 2 8 2 0 7 FAX 61 7 - 2 3 5 - 6 5 B 8 C 0 2 L A S E R P O W E R 125W T O S U P P L IE S 1 50 0W S '!EPT /?S7 /?- /•' 1 25/250/500W BALLASTLESS INSTALLATION,


    OCR Scan     		PDF 9282Q7 7-235-65B8 125/250/500W 500w inverter circuit diagram inverter 1000w 12v dc to 220v ac circuit diagram Design 1000W inverter using 2 parallel transformer main inverter transformer 1000W SCR 40A 600V 500w Full bridge transformer block diagram of dual 12v power supply power supply hv laser co2 5v dc to 110v ac 400 hz inverter SCR firing inverter circuit

    5252 F ic

    Abstract: ic 5252 F c 5252 transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807t OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 9 dB TYP at 2 GHz


    OCR Scan     		PDF NE686 UPA807t UPA807T UPA807T-T1 5252 F ic ic 5252 F c 5252 transistor

    2N5758

    Abstract: 2N5760
    Text: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m


    OCR Scan     		PDF 2N5758, 2N5759. 2N5760 2N5758

    Untitled

    Abstract: No abstract text available
    Text: CD4512BM/CD4512BC 7jW\National ÆjA Semiconductor CD4512BM/CD4512BC 8-Channel Buffered Data Selector General Description Features The CD4512BM/CD4512BC buffered &channel data selec­ tor is a complementary MOS CMOS circuit constructed w ith N- and P-channel enhancement mode transistors.


    OCR Scan     		PDF CD4512BM/CD4512BC CD4512BM/CD4512BC A08MESS

    c 5252 transistor

    Abstract: 5252 diode
    Text: SFH620A SIEMENS 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-320% • • • • • • • • • • • • • • at 1 mA: 45% typical >13 Low CTR Degradation Good CTR Linearity Depending on Forward Current


    OCR Scan     		PDF SFH6206 SFH620A SFH620A c 5252 transistor 5252 diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH620A 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-32 0 % at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • • • • Isolation Test Voltage, 5 3 0 0 VACr MS


    OCR Scan     		PDF SFH620A SFH6206

    p6020

    Abstract: TIP664 TIP-663 TIP663 TIP-665
    Text: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29


    OCR Scan     		PDF TIP663, TIP664, TIP665 hFE---250 T-33-29 p6020 TIP664 TIP-663 TIP663 TIP-665

    TIP665

    Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
    Text: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current


    OCR Scan     		PDF TIP663, TIP664, TIP665 hFE-250 T-33-29 TIP663 TIP664 7526s TIP665 2N6128 tip66 TIP6 P66S

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


    OCR Scan     		PDF DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A

    5252 led

    Abstract: SOIC-6
    Text: SFH6315 SFH6316 SIEMENS High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-6 Footprint • Compatible with Infrared Vapor Phase Raflow and Wave Soldering Processes • Isolation Voltage, 2500VnMS • Very High Common Mode Transient Immunity:


    OCR Scan     		PDF SFH6315 SFH6316 SPH631S/6 2500VnMS 5000V/ns SFH6343) SFH6315--HCPL0500 SFH6316--HCPL0501 SFH6343--HCPL0453 SFH6315/16/43, 5252 led SOIC-6

    GN135

    Abstract: 5252 F "integrated circuit" c 5252 transistor high speed small signal transistor
    Text: OPTEK TECHNOLOGY INC ObE D g ^7=16580OQOOSfiD Optoaloctronic* Division TRW Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5252 January 1985 High Speed Optocouplers Types 6N135, 6N136, QPI2502 Features Absolute Maxim um Ratin gs No derating required up to 70°C


    OCR Scan     		PDF E58730 7500B GN135 5252 F "integrated circuit" c 5252 transistor high speed small signal transistor

    6M136

    Abstract: 5252 F led driver LT 5252 GN135 SN13S 5252 F ic 6N136 5252 F trw RF POWER TRANSISTOR 5252 S
    Text: OPTEK TECHNOLOGY INC ObE D |I b b V7 ^=iaS0 f l S ô GD □0 □Q0 □ □DE2 â0 OG 11 for Product! Prniiurtl Saver Optoaiectronics Division 1987 Cost TRW Electronic Components Group Call TRW for more information! Product Bulletin 5252 Januarv 1985 I M MmWW


    OCR Scan     		PDF 6N135, 6N136, 0PI2502 E58730 6N135 6N136 215B43 6M136 5252 F led driver LT 5252 GN135 SN13S 5252 F ic 5252 F trw RF POWER TRANSISTOR 5252 S