CHINA TV uoc
Abstract: tda95xx av 208 for Tv tuner TDA6107 TDA2615 MULTI2 philips TV tuner module PHILIPS UOC philips TV receiver modules I2C SAA7216
Text: 6298-02 SEMI Bold on Datasheet 14-02-2001 12:35 Pagina 1 This reference design combines Philips Semiconductors’ established technologies for analog TV systems with hardware / software for digital receiving and decoding, to provide a complete, highlyintegrated DVB-T DTV receiver. Easing the migration from
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tdk lambda alpha 400w
Abstract: LAMBDA Alpha 600W lambda alpha ca600 Nemic Lambda alpha 600 lambda 400w mf option alpha400 LAMBDA Lambda diode CA400
Text: • Up to 16 outputs • Voltages up to 48V, Current up to 300A • Fast-on output connection • Worldwide approvals & CB report • Medical Approval Option • 3 Year Warranty Key Market Segments & Applications Instrumentation Broadcast Medical ATE Automation
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Alpha400
90-264Vac
Alpha600
90-264Vac
160-358Vdc
Alpha1000
85-264Vac
120-360Vdc
Alpha1500
tdk lambda alpha 400w
LAMBDA Alpha 600W
lambda alpha
ca600
Nemic Lambda alpha 600
lambda 400w mf option
alpha400
LAMBDA
Lambda diode
CA400
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Lambda VEGA 650
Abstract: klaasing Lambda VEGA 900 EN60068-2 Powerware Plus 40 EN50081-1 EN50082-2 Lambda VEGA EN61000-4-2 EN61000-4-3
Text: Vega 450, 650 & 900 Watts ¾ Industry leading Power Density ¾ 1 to 10 outputs ¾ Voltages from 0.25 – 62V ¾ Current up to 114 Amps ¾ Screw, Fast-on or IEC connection ¾ Worldwide approvals & CB report ¾ Low leakage current for Medical The world’s most configurable power supply
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264Vac,
330Vdc
150-264Vac
440Hz
EN61000-3-2
250Vac
264Vac
Lambda VEGA 650
klaasing
Lambda VEGA 900
EN60068-2
Powerware Plus 40
EN50081-1
EN50082-2
Lambda VEGA
EN61000-4-2
EN61000-4-3
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w2f transistor
Abstract: klaasing ibanez w2f 48 Amtek Lambda VEGA VEGA 650 Lambda VEGA 900 coutant KD 3055
Text: Vega 450 & 650 Watts ! Industry leading Power Density ! 1 to 10 outputs ! Voltages from 1.8 – 62V ! Current up to 120 Amps ! Screw, Fast-on or IEC connection ! Worldwide approvals & CB report ! Low leakage current for Medical The world’s most configurable power supply
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264VAC,
330VDC
440Hz
EN61000-3-2
250VAC
264VAC
500uA,
300uA,
100uA
w2f transistor
klaasing
ibanez
w2f 48
Amtek
Lambda VEGA
VEGA 650
Lambda VEGA 900
coutant
KD 3055
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PHILIPS SMALL SIGNAL DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 BAS32L/S High-speed diode Product specification 2001 Mar 01 Philips Semiconductors Product specification High-speed diode BAS32L/S FEATURES DESCRIPTION • Small hermetically sealed glass SMD package
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M3D054
BAS32L/S
613514/01/pp12
PHILIPS SMALL SIGNAL DIODE
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PMLL4148
Abstract: PMLL4148L PMLL4448 100H01
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 PMLL4148L; PMLL4448 High-speed diodes Product specification Supersedes data of 1999 May 27 2000 Nov 15 Philips Semiconductors Product specification High-speed diodes PMLL4148L; PMLL4448 FEATURES
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M3D054
PMLL4148L;
PMLL4448
PMLL4148L
PMLL4448
OD80C
PMLL4148
100H01
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ST 9340
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23
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M3D088
PSSI3120CA
PSSI3120CA
MGC421
di20CA
13-Feb-03)
ST 9340
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2N7002 Philips
Abstract: 03aa03 philips 2n7002
Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.
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2N7002
2N7002
03ab44
2N7002 Philips
03aa03
philips 2n7002
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BSH112
Abstract: No abstract text available
Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.
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BSH112
M3D088
BSH112
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Untitled
Abstract: No abstract text available
Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.
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BST82
BST82
03ab44
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07256
Abstract: No abstract text available
Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.
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BSP110
BSP110
OT223.
OT223,
03ab45
03ab30
OT223
771-BSP110115
07256
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Untitled
Abstract: No abstract text available
Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.
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BSP110
BSP110
OT223.
OT223,
03ab45
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BSN20
Abstract: No abstract text available
Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.
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BSN20
BSN20
03ab44
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BST82
Abstract: HZG303
Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.
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BST82
BST82
03ab44
HZG303
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Untitled
Abstract: No abstract text available
Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.
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BSP110
BSP110
OT223.
OT223,
03ab45
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BSN20
Abstract: HZG303
Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.
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BSN20
BSN20
03ab44
HZG303
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BUK7237-55A
Abstract: No abstract text available
Text: BUK7237-55A TrenchMOS standard level FET Rev. 01 — 29 January 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7237-55A
M3D300
BUK7237-55A
OT428
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PHX18NQ20T
Abstract: No abstract text available
Text: PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PHX18NQ20T
M3D308
PHX18NQ20T
OT186A.
OT186A,
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Untitled
Abstract: No abstract text available
Text: BUK78150-55A TrenchMOS standard level FET Rev. 01 — 30 January 2001 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK78150-55A
M3D087
BUK78150-55A
OT223
SC-73)
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BUK7775-55A
Abstract: No abstract text available
Text: BUK7775-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7775-55A
M3D308
BUK7775-55A
OT186A
O-220F)
OT186A,
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Untitled
Abstract: No abstract text available
Text: BUK9230-55A TrenchMOS logic level FET Rev. 03 — 30 January 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9230-55A
M3D300
BUK9230-55A
OT428
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07584
Abstract: No abstract text available
Text: BUK7226-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7226-75A
BUK7226-75A
OT428
07584
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PHT4NQ10T
Abstract: SC-73
Text: PHT4NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 31 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHT4NQ10T in SOT223.
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PHT4NQ10T
PHT4NQ10T
OT223.
OT223,
03ab45
SC-73
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Untitled
Abstract: No abstract text available
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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BSP030
BSP030
OT223.
OT223,
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