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    C 3202 TRANSISTOR Search Results

    C 3202 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 3202 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1814-3202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ö V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF Freq30M time400n

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		PDF OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO -400 V


    Original     		PDF ZTX558 200mA 100ms

    HD6473214P16

    Abstract: HD6473217TF16 BC2 373 Hitachi DSA0044
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) HD6473214P16 HD6473217TF16 BC2 373 Hitachi DSA0044

    Hitachi DSA00771

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA00771

    block diagram of mri machine

    Abstract: HD6473214P16 STATES10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF DP-64S) FP-64A) TFP-80C) block diagram of mri machine HD6473214P16 STATES10

    Hitachi DSA0087

    Abstract: HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 8/12/97 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA0087 HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16

    ZTX558

    Abstract: medium power high voltage transistor DSA003769
    Text: ZTX558 TYPICAL CHARACTERISTICS VCE sat - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps)


    Original     		PDF ZTX558 200mA -50mA, -100mA, -10mA, 20MHz -100V -10mA ZTX558 medium power high voltage transistor DSA003769

    Hitachi DSA0057

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 02/07/96 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA0057

    mitsubishi H96

    Abstract: HD6473214F16 HD6473217P16
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF DC-64S) DP-64S) FP-64A) TFP-80C) mitsubishi H96 HD6473214F16 HD6473217P16

    transistor 3205 equivalent

    Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
    Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar


    Original     		PDF

    SDA 3202

    Abstract: sda 3202 prescaler SDA3202 sda 3203 marking adr marking code n14 Q67000-Y904 V4 MARKING
    Text: SIE M E N S SDA 3202 1.3 GHz PLL with l*C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration


    OCR Scan     		PDF SDA3202 Q67000-Y904 P-DIP18 SDA 3202 sda 3202 prescaler SDA3202 sda 3203 marking adr marking code n14 V4 MARKING

    2sa1270

    Abstract: 2SC3202 Low Power Amplifiers 500mW 5v transistor
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3202 ( APPLICATIONS *) • Low F r e q u e n c y , L ow P o w e r Amplifiers ■ G e n e ra l- d riv e r S t a g e Amplifiers ■ General p u r p o s e S w itching A pplications • Excellent hFE v s .


    OCR Scan     		PDF 25min. 400mA 500mA 500mW Ta-25C) 100mA 400mA 100mA, -20mA 2sa1270 2SC3202 Low Power Amplifiers 500mW 5v transistor

    sda 3203

    Abstract: Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking
    Text: SIEMENS SDA 3202 1.3 GHz PLL with l2C Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Message Transmission Via l2C Bus • 4 Software-Controlled Outputs • Prescaler Output Frequency is Free from Interference Radiation Pin Configuration


    OCR Scan     		PDF Q67000-Y904 sda 3203 Tuner ADR SCL SDA SDA 3202 sda 3202 prescaler N6 marking code 27110 SDA3202 SDA3203 3202 flow switch V18 marking

    TRANSISTOR C 3205

    Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
    Text: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,


    OCR Scan     		PDF

    transistor BD 522

    Abstract: A 798 transistor bd801 Bd798
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor "Motorola Preferred Dtvlo« 8 AMPERE POWER TRANSISTORS NPN 8ILIC0N 100 VOLTS 05 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 A 798 transistor Bd798

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM FZT604 FZT605 POWER DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995_ FEA T U R E S * Guaranteed hFE S pecified up to 2 A * Fast S w itching P AR TM AR KIN G DETAIL - DEVICE T YPE IN FU LL CO M PLEM EN TARY TYPES -


    OCR Scan     		PDF OT223 FZT604 FZT605 FZT604 FZT704 FZT605 FZT705

    ztx558

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATURES * 400 V olt VCE0 * 200m A continuous current * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF ZTX558 001G35S ztx558

    2N4211

    Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan     		PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 2N4211 TO63 2N3599 2N3772

    500mW 5v transistor

    Abstract: 2SC3202 Low Power Amplifiers
    Text: SILICON PHP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SM27Q APPLICATIONS • Low F re q u e n c y , L o w P o w e r A m p l if i e r s ■ G e n e r a l - d r i v e r S t a g e A m p l if i e r s • G e r\e ra \ P u r p o s e S w i t c h i n g A p p U c a tio n s


    OCR Scan     		PDF 2SM270 25min. -400mA 500mA 500mW 50CHARACTERISTICS 100mA 100mA, -100mA, 500mW 5v transistor 2SC3202 Low Power Amplifiers

    2N3204

    Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
    Text: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES


    OCR Scan     		PDF 2N3202 2N3203 2N3204 -50mA) SDT3775 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors

    Untitled

    Abstract: No abstract text available
    Text: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary


    OCR Scan     		PDF MHM8N20HX, MHM8P20HX,

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810