C 2640 RF TRANSISTOR Search Results

C 2640 RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

C 2640 RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Specifications Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz MLO80100-02615 V1.00 ● ● ● DETAIL A 5.71 Orientation Mark 4.41 1 RF VCC VT 2 3 5.18 ● LCC1 Package Dimensions Miniature Size Surface Mount Package Electrically Shielded	Original	MLO80100-02615 MLO80100-02615	PDF
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22	PDF
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22	PDF
capacitor 1825 Abstract: Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors	PDF
K 2645 schematic Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
K 2645 schematic circuit Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
k 2645 MOSFET Abstract: K 2645 schematic circuit Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 schematic circuit	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21240HR6 MRF5P21240HR6	PDF
MOSFET marking Z4 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21240HR6	PDF
Untitled Abstract: No abstract text available Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data MRF5P21240R6 replaced by MRF5P21240HR6. H suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5P21240 MRF5P21240R6 MRF5P21240HR6. MRF5P21240R6	PDF
Untitled Abstract: No abstract text available Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21240 MRF5P21240R6	PDF
transistor z9 Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package	Original	RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF	PDF

250GX-0300-55-22 Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 250GX-0300-55-22 j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101	PDF
J2190 Abstract: 2595MHz j2593 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to	Original	MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 MRF6S27015N J2190 2595MHz j2593	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to	Original	MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 15yees, MRF6S27015NR1	PDF
J2190 Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to	Original	MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 MRF6S27015NR1 J2190 A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1	PDF
Untitled Abstract: No abstract text available Text: Skip to content \| \| \| Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products	Original	M39016/44-044P 2500Hz M39016	PDF
l35 CAPacitor Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	PTFA261702E PTFA261702E 170-watt l35 CAPacitor 1800 ldmos marking l33 BCP56 LM7805 RO4350 L42 marking transistor ATC Semiconductor Devices	PDF
RF2373 Abstract: No abstract text available Text: RF5163 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications • 802.11b/g/n Access Points • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment • 2.4GHz ISM Band Applications • Broadband Spread-Spectrum Systems	Original	RF5163 11b/g/n RF5163 16-pin, RF2373	PDF
200B Abstract: BCP56 LM7805 PTFA260851E PTFA260851F Text: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to	Original	PTFA260851E PTFA260851F PTFA260851E PTFA260851F 85-watt 200B BCP56 LM7805	PDF
2Sc2622 Abstract: 2SA1126H 2SA1126 K 2645 transistor 175MHZ 337C transistor k 2627 transistor k 2628 175il Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	470MHz, 200MHz) 470M1 Pc-25 170mhz, 2Sc2622 2SA1126H 2SA1126 K 2645 transistor 175MHZ 337C transistor k 2627 transistor k 2628 175il	PDF
4ka0 Abstract: BUF601 Text: HA RR IS S E M I C O N D S E CT OR • 43 GS 27 1 OQHbflOb H T HFA1110 H A R R IS SEMICONDUCTOR 750MHz Low Distortion Unity Gain, Closed Loop Buffer March 1993 Features Description • W ide-3dB Bandwidth. 750MHz The HFA1110 is a unity gain closed loop buffer that achieves	OCR Scan	HFA1110 750MHz HFA1110 750MHz, 4ka0 BUF601	PDF

C 2640 RF TRANSISTOR Search Results

C 2640 RF TRANSISTOR Result Highlights (5)

C 2640 RF TRANSISTOR Datasheets Context Search

Untitled

k 2645 MOSFET

k 2645 MOSFET

capacitor 1825

K 2645 schematic

K 2645 schematic circuit

k 2645 MOSFET

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MOSFET marking Z4

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transistor z9

250GX-0300-55-22

J2190

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J2190

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l35 CAPacitor

RF2373

200B

2Sc2622

4ka0