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    C 2640 RF TRANSISTOR Search Results

    C 2640 RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 2640 RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Specifications Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz MLO80100-02615 V1.00 ● ● ● DETAIL A 5.71 Orientation Mark 4.41 1 RF VCC VT 2 3 5.18 ● LCC1 Package Dimensions Miniature Size Surface Mount Package Electrically Shielded


    Original     		PDF MLO80100-02615 MLO80100-02615

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors

    K 2645 schematic

    Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H

    A114

    Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H

    k 2645 MOSFET

    Abstract: K 2645 schematic circuit
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 schematic circuit

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3

    TH 2190 Transistor

    Abstract: TH 2190 mosfet z24 mosfet
    Text: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240R6 TH 2190 Transistor TH 2190 mosfet z24 mosfet

    2508051107Y0

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 EKMG630ELL331MJ20S
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HSR3 EKMG630ELL331MJ20S

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6

    TH 2190 mosfet

    Abstract: th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 TH 2190 mosfet th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor

    MOSFET marking Z4

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4

    bfp640f

    Abstract: digital multimedia broadcasting low noise amplifier ghz lna preamplifier ghz dbm Satellite power supply schematic diagram FSEM30
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 5 L N A f or S at e l l i t e D i g i t al M u l t i m ed i a B r o a d c a s ti n g A p pl i c a t i o n s us i n g B F P 6 4 0 F S i G e T r an s i s t o r


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6

    Untitled

    Abstract: No abstract text available
    Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240 MRF5P21240R6 MRF5P21240HR6. MRF5P21240R6

    Untitled

    Abstract: No abstract text available
    Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240 MRF5P21240R6

    th 2190

    Abstract: TH 2190 mosfet TH 2190 Transistor C 2640 rf transistor rf push pull mosfet power amplifier AN1955 CDR33BX104AKWS MRF5P21240 MRF5P21240HR6 MRF5P21240R6
    Text: Freescale Semiconductor Technical Data MRF5P21240 Rev. 2, 12/2004 MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240 MRF5P21240R6 MRF5P21240HR6. MRF5P21240R6 th 2190 TH 2190 mosfet TH 2190 Transistor C 2640 rf transistor rf push pull mosfet power amplifier AN1955 CDR33BX104AKWS MRF5P21240 MRF5P21240HR6

    j6808

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors

    C 2640 rf transistor

    Abstract: diode DB 3 C
    Text: jtà i Preliminary Specifications M a n A M P <c o m p a n y Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz ML080100-02615 V1.00 Features LCC1 Package Dimensions • • • Miniature Size Surface Mount Package Electrically Shielded • •


    OCR Scan     		PDF ML080100-02615 MLO80100-02615 C 2640 rf transistor diode DB 3 C

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors Designed for 24 voll UHF large-signal, com m on-em itter am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 4 -9 6 0 MHz.


    OCR Scan     		PDF MRF890