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    C 1006 TRANSISTOR Search Results

    C 1006 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 1006 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 1006

    Abstract: RN1003 RN1001 RN1002 RN1004 RN1005 RN1006 RN2001 RN2006
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design


    Original     		PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001RN2006 RN1001 RN1002 ic 1006 RN1003 RN1006 RN2001 RN2006

    RN1001

    Abstract: RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design


    Original     		PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001RN2006 RN1001 RN1002 RN1003 RN1006 RN2001 RN2006

    Untitled

    Abstract: No abstract text available
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design


    Original     		PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006

    Untitled

    Abstract: No abstract text available
    Text: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042L OT115AE 2002/95/EC,

    transistor A 1006

    Abstract: TRANSISTOR 100-6 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design


    Original     		PDF RN1001 RN1006 RN1002 RN1003 RN1004 RN1005 RN2001 RN2006 transistor A 1006 TRANSISTOR 100-6 RN1003 RN1006 RN2006

    TRANSISTOR 100-6

    Abstract: transistor A 1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design


    Original     		PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 RN1001 TRANSISTOR 100-6 transistor A 1006 RN1003 RN1006 RN2006

    transistor A 1006

    Abstract: RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 22 1006
    Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design


    Original     		PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 RN1001 transistor A 1006 RN1003 RN1006 RN2006 22 1006

    sod87 Melf

    Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1n5819 melf 1PS76SB62 1PS76SB21 BAS70 MELF SOD532
    Text: Schottky diodes Selection guide With over 13% market share in terms of quantity, Philips is among the top five worldwide suppliers of small signal diodes and transistors.We offer a very broad portfolio – from conventional leaded products to the latest ultra-small lead-free


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EC3H07B NPN Epitaxial Planar Type Silicon Transistor For VHF band low-noise Amp and Oscillation Preliminary specifications TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V)


    Original     		PDF EC3H07B 10GHz 000214TM2fXHD

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    MOC1005

    Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, IEC204/ VDE0113, VDE0160, VDE0832, VDE0833, MOC1005 MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X

    TPC8204

    Abstract: No abstract text available
    Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16


    OCR Scan     		PDF TPC8204 TPC8204

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		PDF TPCS8102

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		PDF TPCS8101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : RßS (ON) = 27 mH (Typ.)


    OCR Scan     		PDF TPC8303

    2SJ148

    Abstract: 2SK982
    Text: TOSHIBA 2SK982 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK982 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS • • • • • 5.1 MAX. Excellent Switching Times : ton = 14 ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SK982 2SJ148 2SJ148 2SK982

    HN4K03JU

    Abstract: S-25
    Text: TOSHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package


    OCR Scan     		PDF HN4K03JU 961001EAA1 HN4K03JU S-25

    tpc8101

    Abstract: TPCS8101 tpc81
    Text: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		PDF TPCS8101 tpc8101 TPCS8101 tpc81

    Untitled

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V


    OCR Scan     		PDF HN1L03FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance


    OCR Scan     		PDF TPC8204

    2sd1008

    Abstract: 2SD 388 A
    Text: SILICON TRANSISTORS 2SD1 006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1006 and 2SD1007 are designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M iniatu re Package : SO T —89


    OCR Scan     		PDF 2SD1007 2SD1007 2SD1007) 2SB805 2SB806 2sd1008 2SD 388 A

    2ssm

    Abstract: TPCS8102
    Text: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		PDF TPCS8102 2ssm TPCS8102

    HN1K03FU

    Abstract: N1K03
    Text: HN1K03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N 1 K03FU HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. U nit in mm 2.1 ± 0.1 1.25 ± 0.1 • High Input Impedance 6 P • Low Gate Threshold Voltage Vth = 0 .5 - 1 .5 V


    OCR Scan     		PDF HN1K03FU N1K03FU HN1K03FU N1K03