byw 150
Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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ITO-220AC
O-220AC
BYW29
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
BYWF29
byw 150
diode byw 81 200
diode BYW 66
JESD22-B102D
J-STD-002B
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byw 04-15
Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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PDF
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ITO-220AC
O-220AC
BYW29
O-263AB
BYWF29
O-263AB
BYWB29
2002/95/EC
2002/96/EC
J-STD-020C
byw 04-15
JESD22-B102D
J-STD-002B
byw 91-4
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byw 150
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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Original
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PDF
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O-220AC
ITO-220AC
J-STD-020C,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
O-220AC,
ITO-220AC,
byw 150
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
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diode BYW 66
Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
diode BYW 66
JESD22-B102
J-STD-002
BYW29-200-E3
byw 91-4
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byw 91-4
Abstract: BYW series byw29
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020C,
ITO-220AC
2002/95/EC
byw 91-4
BYW series
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
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BYW295
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
BYW295
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BYW29
Abstract: JESD22-B102 J-STD-002
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
JESD22-B102
J-STD-002
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IC JRC 1038
Abstract: A 3150 V BYW77100
Text: Back to Ultra Fast Rectifiers NES701 N E S7 0 2 N E S7 0 3 BYW 31-50 BYW 31-100 BYW 31-150 BYW 77-50 BYW 77-100 BYW 77-150 RECTIFIERS High Efficiency, 25 A DESCRIPTION Designed to meet the efficiency demand of switching type power supplies, these devices are useful in many switching
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NES701
NES702
NES703
ES701
STD-750
125-C.
IC JRC 1038
A 3150 V
BYW77100
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46R2S
Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Text: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)
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300A2s
CB-257)
10-32UNF"
CB-33)
R2S-50
R2S-30
R2S-70
46R2S
r2s30
FR76
BYW 26
Thomson-CSF plastic diodes
FR79
36R2S
diodes byw
CASA10
R83HZ
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ultra fast recovery diodes
Abstract: BYW series
Text: BYW 30 SERIES _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW30
ultra fast recovery diodes
BYW series
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BYW29
Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Text: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.
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BYW29-50
UES1401
BYW29-100
UES1402
BYW29-150
UES1403
BYW29/UES1400
O-220,
BYW29
UES1403
es1403
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Untitled
Abstract: No abstract text available
Text: E5E D N AMER P H IL IP S/ D IS CR ET E H •" ” ~ b b SETB l _ ii O O EETST b ■ BYW 30 SERIES A 7^ <33-/7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low
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00327bb
BYW30
T-03-17
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BYW29 diode rectifier
Abstract: BYW29 TMF-3 TU-31
Text: BYW 29 SERIES _ PHILIPS INT ERN AT IO NAL 5 bE D • 7 1 1 DfiSb 0 0 4 1 S 4 4 mb HIPH IN T -Ô 3 " 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h igh-efficien cy ep itaxial re c tifie r diodes in plastic envelopes, featu rin g lo w fo rw a rd
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BYW29
0041S44
BYW29-
M2488
711065b
0041SS3
M14S9
BYW29 diode rectifier
TMF-3
TU-31
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Untitled
Abstract: No abstract text available
Text: BYW 29 SERIES _ U L T R A F A S T R E C O V E R Y R E C TIFIE R D IO D E S Glass-passivated, hig h -e fficie n cy e p ita xia l re c tifie r diodes in plastic envelopes, fe aturing low fo rw a rd voltage dro p , u ltra fast reverse recovery tim es w ith very low stored charge and soft-recovery
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diode BYW 85
Abstract: BYW 70 BYW25-800 diode BYW 60
Text: BYW25 SERIES MAINTENANCE TYPE J \_ FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and com m utating diodes in 3-phase a.c. m otor speed control inverters and in high frequency power
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BYW25
1000R.
7Z78500
BYW25
7Z77891
diode BYW 85
BYW 70
BYW25-800
diode BYW 60
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW97 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of
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BYW97
MAM104
MGC574
MGA200
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • • • • • • BYW29E series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance
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BYW29E
T0220AC)
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BYW97
Abstract: BYW97F BYW97G un-07
Text: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW97 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of
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BYW97
1996Jun07
01Q475h
BYW97F
BYW97G
un-07
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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42R2
Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Text: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)
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200A2s
CB-33)
100A2s
CB-227)
1000A2
-28UNF*
42R2
diode 42R2
BYW series
FR56A
FR57A
62R2
fr56
Thomson-CSF rectifier
22R2
FR58A
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BYW series
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION BYW29EX series QUICK REFERENCE DATA SYMBOL Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop,
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BYW29EX
BYW29EXRepetitive
BYW series
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • • • • • • BYW29E series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance
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BYW29E
T0220AC)
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