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    WeEn Semiconductor Co Ltd BYV10EX-600PQ

    DIODE GEN PURP 600V 10A TO220FP
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    DigiKey BYV10EX-600PQ Tube 11,997 1
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    Avnet Americas BYV10EX-600PQ Tube 8 Weeks 6,000
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    Mouser Electronics BYV10EX-600PQ 5,900
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    Bristol Electronics BYV10EX-600PQ 700
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    STMicroelectronics TMBYV10-40FILM

    DIODE SCHOTTKY 40V 1A MELF
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    DigiKey TMBYV10-40FILM Digi-Reel 10,238 1
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    TMBYV10-40FILM Cut Tape 10,238 1
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    TMBYV10-40FILM Reel 10,200 1,500
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    Mouser Electronics TMBYV10-40FILM 10,552
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    Newark TMBYV10-40FILM Cut Tape 2,730 5
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    STMicroelectronics TMBYV10-40FILM 10,552 1
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    TME TMBYV10-40FILM 3,035 1
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    Avnet Silica TMBYV10-40FILM 94,500 17 Weeks 1,500
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    EBV Elektronik TMBYV10-40FILM 1,027,500 26 Weeks 1,500
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    WeEn Semiconductor Co Ltd BYV10-600PQ

    DIODE GEN PURP 600V 10A TO220AC
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    DigiKey BYV10-600PQ Tube 7,460 1
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    Avnet Americas BYV10-600PQ Tube 8 Weeks 6,000
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    Mouser Electronics BYV10-600PQ 2,906
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    Avnet Silica BYV10-600PQ 9 Weeks 1,000
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    STMicroelectronics TMBYV10-60FILM

    DIODE SCHOTTKY 60V 1A MELF
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    DigiKey TMBYV10-60FILM Cut Tape 4,652 1
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    TMBYV10-60FILM Digi-Reel 4,652 1
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    TMBYV10-60FILM Reel 1,500 1,500
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    Avnet Americas TMBYV10-60FILM Reel 1,500 25 Weeks 1,500
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    Mouser Electronics TMBYV10-60FILM 8,840
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    Newark TMBYV10-60FILM Cut Tape 970 5
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    STMicroelectronics TMBYV10-60FILM 8,840 1
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    TME TMBYV10-60FILM 1,698 1
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    TMBYV10-60FILM 240,000 26 Weeks 1,500
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    WeEn Semiconductor Co Ltd BYV10ED-600PJ

    DIODE GEN PURP 600V 10A DPAK
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    DigiKey BYV10ED-600PJ Reel 2,500 2,500
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    BYV10ED-600PJ Cut Tape 2,072 1
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    BYV10ED-600PJ Digi-Reel 1
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    Mouser Electronics BYV10ED-600PJ 912
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    Arrow Electronics BYV10ED-600PJ 2,500 8 Weeks 2,500
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    Quest Components BYV10ED-600PJ 10,000
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    BYV10 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYV10 Philips Semiconductors Schottky barrier diodes Original PDF
    BYV10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYV10 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYV-100 Microsemi RECTIFIERS Scan PDF
    BYV10-100T USHA 5.0A Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    BYV10-150T USHA 5.0A Iout, 150V Vrrm Fast Recovery Rectifier Scan PDF
    BYV1020 Philips Semiconductors Schottky barrier diodes Original PDF
    BYV10-20 Philips Semiconductors Schottky Barrier Diode Original PDF
    BYV10-20 Philips Semiconductors Schottky Barrier Diodes Original PDF
    BYV10-20 Philips Semiconductors Schottky barrier diodes Scan PDF
    BYV10-20 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BYV10-20 Thomson Semiconductors Schottky Rectifier Diodes Scan PDF
    BYV10-20 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BYV10-200T USHA 5.0A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    BYV10-20A STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
    BYV10-20-A STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
    BYV10-20A STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BYV10-20-A52R Philips Semiconductors Schottky barrier diodes Original PDF
    BYV10-20T/R Philips Semiconductors DIODE SCHOTTKY 20V 1A 2SOD81 T/R Original PDF
    BYV1020TR Philips Semiconductors Schottky barrier diode Original PDF

    BYV10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TO -22 F BYV10EX-600P Ultrafast power diode 25 September 2014 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • • Fast switching Isolated plastic package


    Original
    PDF BYV10EX-600P OD113 O-220F)

    BAT49

    Abstract: BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35
    Text: POWER RECTIFIERS SIGNAL SCHOTTKY DIODES DO35 Voltage max Current DO41 Part Number 20 Volts 350 mAmps BAT47 30 Volts 200 mAmps BAT42 BAT43 TMMBAT42 TMMBAT43 40 Volts 350 mAmps BAT48 TMMBAT48 1000 mAmps BYV10-40 BYV10-40 60 Volts 15mAmps 1N6263 TMM6263 1000 mAmps


    Original
    PDF BAT47 BAT42 BAT43 TMMBAT42 TMMBAT43 BAT48 TMMBAT48 BYV10-40 TMBYV10-40 15mAmps BAT49 BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35

    Untitled

    Abstract: No abstract text available
    Text: TO -22 F BYV10X-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package


    Original
    PDF BYV10X-600P OD113 O-220F)

    Untitled

    Abstract: No abstract text available
    Text: TO -22 AC BYV10-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • • • • Fast switching Low leakage current Low forward voltage drop


    Original
    PDF BYV10-600P O-220AC)

    Untitled

    Abstract: No abstract text available
    Text: BYV10-60 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0


    Original
    PDF BYV10-60 Voltage60 Current500u Current10m StyleDO-41

    Untitled

    Abstract: No abstract text available
    Text: BYV10-20A Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)3.0


    Original
    PDF BYV10-20A Voltage20 Voltage750m Current300u Current10m StyleDO-41

    Untitled

    Abstract: No abstract text available
    Text: BYV10-200T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-200T Voltage200 Time35n StyleTO-220AB

    Untitled

    Abstract: No abstract text available
    Text: TO -22 F BYV10X-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package


    Original
    PDF BYV10X-600P OD113 O-220F)

    Untitled

    Abstract: No abstract text available
    Text: BYV10-600T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-600T Voltage600 Time50n StyleTO-220AB

    DIODE byv10-20

    Abstract: sod81 BYV10-40 SC01 Mounting 1996 1 BYV10 BYV10-20 BYV10-30 M3D119 byv1040
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes


    Original
    PDF M3D119 BYV10 BYV10-20 BYV10-40 DIODE byv10-20 sod81 SC01 Mounting 1996 1 BYV10-30 M3D119 byv1040

    Untitled

    Abstract: No abstract text available
    Text: TO -22 AC BYV10-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • • • • Fast switching Low leakage current Low forward voltage drop


    Original
    PDF BYV10-600P O-220AC)

    BYV10

    Abstract: BYV10-40 BYV10-20 BYV10-30
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses


    Original
    PDF M3D119 BYV10 BYV10-20 BYV10-40 BYV10-30

    Untitled

    Abstract: No abstract text available
    Text: BYV10-500T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-500T Voltage500 Time50n StyleTO-220AB

    Untitled

    Abstract: No abstract text available
    Text: BYV10-150T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-150T Voltage150 Time35n StyleTO-220AB

    Untitled

    Abstract: No abstract text available
    Text: BYV10-100T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-100T Voltage100 Time35n StyleTO-220AB

    Untitled

    Abstract: No abstract text available
    Text: BYV10-300T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0


    Original
    PDF BYV10-300T Voltage300 Time35n StyleTO-220AB

    BYV10-40

    Abstract: BYV10-30 DIODE byv10-20 BYV10-20 SC01 Mounting 1996 1 BYV10 PHILIPS BYV10 BYV1020 Philips applications BYV1040
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes


    Original
    PDF M3D119 BYV10 BYV10-20 BYV10-40 BYV10-30 DIODE byv10-20 SC01 Mounting 1996 1 PHILIPS BYV10 BYV1020 Philips applications BYV1040

    Untitled

    Abstract: No abstract text available
    Text: BYV10-30 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0


    Original
    PDF BYV10-30 Voltage30 Voltage550m Current10m StyleDO-41

    Untitled

    Abstract: No abstract text available
    Text: BYV10-20 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0


    Original
    PDF BYV10-20 Voltage20 Voltage550m Current10m StyleDO-41

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass


    OCR Scan
    PDF BYV10 BYV10-20 BYV10-40 MAM21S

    DIODE byv10-20

    Abstract: BYV10 BYV1020 JTP 55 diode BYV10-20 U-28
    Text: N AMER PHILIPS/ DIS CRETE b'IE D • bbSa^ai GG E b b M 1! bfc>4 HIAPX BYV10 J l SCHOTTKY BARRIER DIODE Schottky barrier diode w ith an integrated p-n junction protection ring in a SOD81 glass envelope and intended fo r use in low output voltage, low-power switch-mode power supplies and, in general, in


    OCR Scan
    PDF BYV10 BYV10-20 BYV10-20 DIODE byv10-20 BYV10 BYV1020 JTP 55 diode U-28

    DIODE byv10-20

    Abstract: BYV10 BYV10-30 BYV10-40 BYV10-20 sod81 BYV1020
    Text: Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass


    OCR Scan
    PDF BYV10 BYV10-20 BYV10-40 711002b 010322b DIODE byv10-20 BYV10-30 sod81 BYV1020

    ByV schottky

    Abstract: No abstract text available
    Text: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­


    OCR Scan
    PDF BYV10-20A ByV schottky

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/ DISCRE TE b'lE » bbS3T31 Q D E b b M 1! bb4 H A P X BYV10 JL SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 glass envelope and intended for use in low output voltage, low-power switch-mode power supplies and, in general, in


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    PDF bbS3T31 BYV10