Untitled
Abstract: No abstract text available
Text: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio
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0110b
00355CH
DD3SS11
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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G00G173
500mW
DO-35
DO-41
DO-15
DO-201AD
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ph 41 zener diode
Abstract: No abstract text available
Text: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity
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S137SS1
000016M
IN3379-IN3883
7/16th
DO-35
DO-15
DO-201AD
ph 41 zener diode
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Untitled
Abstract: No abstract text available
Text: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max
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000018t,
IN3889-IN3893
7/16th
DO-35
DO-15
DO-201AD
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PDF
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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PDF
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DMF2190
Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
Text: Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer
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015mm)
005mm)
DMF2190
DMJ2312-255
DMF2821-250
ka-band mixer
DME2459
DMF2454
mixer diodes
DME2127-250
DMF2835-000
DMF2820
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PDF
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MCA231
Abstract: MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators
Text: MCA230 MCA231 MCA255 OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting GaAs diode and an npn silicon photo-D arlington transistor. Features o f these products: • • • • High o u tp u t/in p u t DC current transfer ratio
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MCA230
MCA231
MCA255
MCA255)
E90700
0110b
804/VDE
86/HD
LLS3T31
003551b
MCA231
MCA265
MCA230
MCA255
OPTOCOUPLER dc
231 transistor
opto isolators
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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PDF
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pin diode do35
Abstract: 1N3502 1n3504 diode zener PG 200
Text: SEMITRON I N D U S T R I E S LTD 43E D • 013700*? 00GG175 3 B S L C B - t - u -0 7 IN3501-3504 S E R I E S Temperature Compensated Diode 6V35 Ultra Stable APPLICATIONS GLASS D07 ■ This series of Semitron 250 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY
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00GG175
IN3501-3504
PPM/1000
DO-35
DO-35
DO-41
DO-15
DO-201AD
pin diode do35
1N3502
1n3504
diode zener PG 200
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Untitled
Abstract: No abstract text available
Text: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured
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D000177
IN4890-4895A
PPM/1000
DO-35
DO-41
DO-15
DO-201AD
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PDF
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Untitled
Abstract: No abstract text available
Text: MCA230 MCA231 MCA255 J \ _ OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and an npn silicon photo-Darlington transistor. Features of these products: • • • • High output/input DC current transfer ratio
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MCA230
MCA231
MCA255
MCA255)
E90700
0110b
804/VDE
86/HD
bb53T31
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PDF
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semikron skiip 33
Abstract: semikron IGBT skiip 602
Text: SKiiP 602 GH 061 - 2*255 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM
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IGBT11)
Rthjs10)
semikron skiip 33
semikron IGBT skiip 602
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BY 255 dc diode
Abstract: BY 255 diode SKIIP602GB
Text: SKiiP 602 GB 061 - 255 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
BY 255 dc diode
BY 255 diode
SKIIP602GB
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS
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000015R
BS9305-F081
9305-F-081
IN3305
IN3340
IN3341
IN3350
DO-35
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Untitled
Abstract: No abstract text available
Text: ÖUALITY TECHNOLOGIES CORP S7E D • MCA230 MCA231 MCA255 7MbböSl OaOMbM? fill ■ Ö T V OPTOCOUPLERS i— _ J \ Optically coupled isolators consisting of an infrared emitting GaAs diode and an npn silicon photo-Darlington transistor. Features o f these products:
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MCA230
MCA231
MCA255
MCA255)
E90700
0110b
804/VDE
86/HDT
74bbfl51
OT212.
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PDF
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Untitled
Abstract: No abstract text available
Text: 43E D • 01 3 7 0 0 ^ G G D D lb l 3 ■ S L C B SE fllTRON I N D U S T R I E S B Z Y 9 3 / Z 7 SERIES LTD -t-«-«. Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F080 ■Voltage Range 3.0 to 400 Volts 25 Watt Steady State ■1500 Watt Peak Power
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BS9305-F080
9305-F-080
DO-35
DO-41
DO-15
DO-201AD
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PDF
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bzx98c
Abstract: 1N30098 Z3813 Z3827 in137
Text: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power
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IN3900/IN2900/Z3
BS9305-F079
9305-F-079
DO-35
DO-41
DO-15
DO-201AD
bzx98c
1N30098
Z3813
Z3827
in137
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AK2573A
Abstract: AK2573AVB C101 620CH
Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)
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AK2573A]
AK2573A
MS0189-E-01>
AK2573A
AK2573AVB
C101
620CH
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BZX79
Abstract: BZX79C2V4 BZX79C2V7 BZX79C3V0 BZX79C3V3 BZX79C3V6 BZX79C3V9 BZX79C4V3 BZX79C4V7 BZX79C5V1
Text: BZX79. ZENER DIODES Features • The Zener voltages are graded according to the international E 24 standard. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit (1) mW Zener current see table “Characteristics” Power Dissipation Ptot 500 Junction Temperature
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BZX79.
BZX79C200
BZX79
BZX79C2V4
BZX79C2V7
BZX79C3V0
BZX79C3V3
BZX79C3V6
BZX79C3V9
BZX79C4V3
BZX79C4V7
BZX79C5V1
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PDF
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BZX79
Abstract: BZX79C2V4 BZX79C2V7 BZX79C3V0 BZX79C3V3 BZX79C3V6 BZX79C3V9 BZX79C4V3 BZX79C4V7 BZX79C5V1
Text: BZX79. ZENER DIODES Features • The Zener voltages are graded according to the international E 24 standard. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit (1) mW Zener current see table “Characteristics” Power Dissipation Ptot 500 Junction Temperature
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BZX79.
BZX79C200
BZX79
BZX79C2V4
BZX79C2V7
BZX79C3V0
BZX79C3V3
BZX79C3V6
BZX79C3V9
BZX79C4V3
BZX79C4V7
BZX79C5V1
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PDF
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BZX79
Abstract: BZX79C2V4 BZX79C2V7 BZX79C3V0 BZX79C3V3 BZX79C3V6 BZX79C3V9 BZX79C4V3 BZX79C4V7 BZX79C5V1
Text: BZX79. ZENER DIODES Features • The Zener voltages are graded according to the international E 24 standard. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit (1) mW Zener current see table “Characteristics” Power Dissipation Ptot 500 Junction Temperature
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BZX79.
BZX79C200
BZX79
BZX79C2V4
BZX79C2V7
BZX79C3V0
BZX79C3V3
BZX79C3V6
BZX79C3V9
BZX79C4V3
BZX79C4V7
BZX79C5V1
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PDF
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7901 rectifier
Abstract: delco remy alternators Renard press fit alternator diodes diode LR 105 Delco DIODE RECTIFIER press fit DL 7760 alternator diode 65 amp D021
Text: m Diodes ENGINEERING DATA - DIODE GENERAL DESCRIPTION FOR 1/2“ PRESS-FIT DIODES The Renard series of press-fit diodes with minimum continuous rating from 25, 30,35 to 50 amp forward current are double diffused junction silicon power diodes designed for use in automotive alternators. Renard ratings are 25,30,35 and 50
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U1660
Abstract: No abstract text available
Text: MOTOROLA Order this document by MURF1660CT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M URF1660CT SWITCHMODE Pow er R ectifier Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:
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MURF1660CT/D
URF1660CT
E69369
16Opportunity/Affirmative
U1660
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PDF
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1M5378B
Abstract: No abstract text available
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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IN5333-IN5388
DO-35
DO-41
DO-15
DO-201AD
1M5378B
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PDF
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