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    BY 178 DIODE Search Results

    BY 178 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    BY 178 DIODE Price and Stock

    Microchip Technology Inc JANTXV1N5811US

    Diode - JANTXV Level - 150V - 3A - 875 mV @ 4 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - B, SQ-MELF Package.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV1N5811US 178
    • 1 -
    • 10 $11.43
    • 100 $10.41
    • 1000 $10.1
    • 10000 $10.1
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    Microchip Technology Inc JANTXV1N5290-1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV1N5290-1
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    • 100 $30.13
    • 1000 $30.13
    • 10000 $30.13
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    Microchip Technology Inc JANTX1N4115-1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTX1N4115-1
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    • 100 $4.42
    • 1000 $4.03
    • 10000 $4.03
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    Microchip Technology Inc CDLL4135

    Zener Diode - 100V - ±5% Tolerance - 500 mW - 1600 Ohms - 1.1 V @ 200 mA Forward (Vf) (Max) @ If - DO-213AB - Surface Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CDLL4135
    • 1 -
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    • 100 $5.23
    • 1000 $3.63
    • 10000 $3.63
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    Microchip Technology Inc 1N5245B-1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5245B-1
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    • 100 $2.81
    • 1000 $1.93
    • 10000 $1.93
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    Find more BY 178 DIODE price and stock on Findchips.com

    BY 178 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ESD0P2RF-02LRH

    Abstract: PCB on-chip ESD discharge protection connector s22 varistor AN103 AN140 AN167 BFP740F ESD0P2RF-02LS JESD22-A114D copper bond wire infineon
    Text: Application Note, Rev. 1.0, Dec. 2008 Application Note No. 178 ESD Protection for RF Antennas using Infineon ESD0P4RFL and ESD0P2RF Small Signal Discretes Edition 2008-12-05 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.


    Original     		PDF BGA728L7 ESD0P2RF-02LRH PCB on-chip ESD discharge protection connector s22 varistor AN103 AN140 AN167 BFP740F ESD0P2RF-02LS JESD22-A114D copper bond wire infineon

    Untitled

    Abstract: No abstract text available
    Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-130814 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup


    Original     		PDF R2062 EA-178-130814 Room403, Room109, 10F-1,

    ML614

    Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16
    Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-070910 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup


    Original     		PDF R2062 EA-178-070910 X1X1X101) ML614 R2062K01-E2 R2062K02-E2 SSOP16

    ML614

    Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16
    Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-080118 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup


    Original     		PDF R2062 EA-178-080118 X1X1X101) ML614 R2062K01-E2 R2062K02-E2 SSOP16

    free transistor equivalent book

    Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D


    Original     		PDF DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE

    EIA-468 label location

    Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


    Original     		PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC­ r14525 EIA-468 label location W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363

    SOD223

    Abstract: SOD-223
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low


    Original     		PDF LM1MA151WAT1G LM1MA152WAT1G SC-59 -100mA LM1MA151WAT3G 10000/Tape 3000/Tape SOD223 SOD-223

    str 50113

    Abstract: BZX79-C6 c5v1 BZX79C6V2 philips BZX79-C27AMO C4V7 ST SOD27 BZX79-C bzx79-c philips BZX79C9V1AMO
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES DESCRIPTION • Total power dissipation:


    Original     		PDF M3D176 BZX79 DO-35) BZX79-A) BZX79-B) BZX79-C6V8 str 50113 BZX79-C6 c5v1 BZX79C6V2 philips BZX79-C27AMO C4V7 ST SOD27 BZX79-C bzx79-c philips BZX79C9V1AMO

    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


    Original     		PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3

    9351

    Abstract: diode ring mixer 9351 equivalent HSCH-9301 HSCH-9351 HSCH9351 HP 9301 SONY+msl+9351
    Text: Agilent HSCH-9301/HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Data Sheet HSCH-9301 Junction Side up 125 (4.9) 115 (4.1) 183 (7.2) 178 (7.0) 756 (29.8) 746 (29.4) 390 (15.4) 310 (12.2) Features 125 (4.9) 105 (4.1) L = 0.1 nH 346 (13.6)


    Original     		PDF HSCH-9301/HSCH-9351 HSCH-9301 HSCH-9301 HSCH-9351 HSCH-9301/-9351/rev 9351 diode ring mixer 9351 equivalent HSCH9351 HP 9301 SONY+msl+9351

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 26NAB066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ',  4 ' ,-  * #% +$        * #% 12/3 +  * #% 12/3 +$  5 "  7 Values Units .// 6 #/ '   ' 8 9/ : ; "%/ + Diode - Inverter, Chopper


    Original     		PDF 26NAB066V1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction


    Original     		PDF LRB500V-40T1G OD-323 3000/Tape LRB500V-40T3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)


    Original     		PDF LRB521S-30T1 SC-79/SOD523) 200mA 200mA) OD523/SC-79 LRB521S-30T1

    SOT 363 marking CODE 039

    Abstract: LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-30T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.


    Original     		PDF LRB520S-30T1 SC-79/SOD523) OD523/SC-79 LRB520S-30T3 3000/Tape 10000/Tape 1330mm 360mm SOT 363 marking CODE 039 LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1G High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323


    Original     		PDF L1SS356T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar


    Original     		PDF LRB501V-40T1G OD-323 3000/Tape LRB501V-40T3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking


    Original     		PDF LBA277T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)


    Original     		PDF LRB551V-30T1GG LRB551V-30T1G 3000/Tape LRB551V-30T3G 10000/Tape

    LDC20B030

    Abstract: LDC20B murata ldb20 ldb20 ldb25 balun
    Text: MONOLITHIC DEVICES m itfìa fn SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL T2EKK2 COUPLERS/90° HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering


    OCR Scan     		PDF COUPLERS/90° LDB20 LDC30B030GC2100 LDC30B030GC2500 LDC35B030GC0250 LDC20B030F1600 LDC20B030F1850 LDC20BxxxxJrax LDC20BxxxxHxxxx LDC20B030 LDC20B murata ldb20 ldb20 ldb25 balun

    LDC30B030GC0850

    Abstract: No abstract text available
    Text: MONOLITHIC DEVICES SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL COUPLERS/900 HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering before use.


    OCR Scan     		PDF COUPLERS/900 100aC. LDC30B030GC0850 LDC30B030GC1000 LDC30BXXXJXXXX LDC20 LDB30 LDB33

    1N5628

    Abstract: 12115X marking AB SOD123 1N5828
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5826 1N5827 1N5828 1N582S 1N5828 DO-35 1N5628 12115X marking AB SOD123

    1N5831

    Abstract: E5 sot223 1N5829
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF prop30 DO-35 1N5831 E5 sot223 1N5829

    diode sy 164 dl

    Abstract: diode sy 164 02N2222 b6045
    Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


    OCR Scan     		PDF MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045

    12v dc full wave bridge rectifier

    Abstract: 5000 watt full bridge design 1N5S34
    Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design