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    BWD TRAN Search Results

    BWD TRAN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    BWD TRAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0


    Original     		PDF AS5SP256K36DQ MS026-D/BHA

    CY7C1380B

    Abstract: CY7C1382 CY7C1382B
    Text: 380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • •


    Original     		PDF CY7C1380B CY7C1382B CY7C1380B CY7C1382 CY7C1382B

    CY7C1386B-133AC

    Abstract: CY7C1386B CY7C1386B-200AC CY7C1387B
    Text: 1CY7C1386B CY7C1386B CY7C1387B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined DCD SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • •


    Original     		PDF 1CY7C1386B CY7C1386B CY7C1387B CY7C1386B-133AC CY7C1386B CY7C1386B-200AC CY7C1387B

    CY7C1441V33

    Abstract: CY7C1443V33
    Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,


    Original     		PDF CY7C1441V33 CY7C1443V33 CY7C1447V33 36/2M 18/512K 133-MHz 36/2M 18/512K 150-MHz CY7C1441V33 CY7C1443V33

    AS5SP128K32DQ

    Abstract: CMOS linear array
    Text: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time


    Original     		PDF AS5SP128K32DQ MS026-D/BHA AS5SP128K32DQ CMOS linear array

    AS5SP512K36DQ

    Abstract: No abstract text available
    Text: SSRAM AS5SP512K36DQ A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns


    Original     		PDF AS5SP512K36DQ AS5SP512K36DQ

    CY7C1382

    Abstract: No abstract text available
    Text: CY7C1380A CY7C1382A PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • • •


    Original     		PDF CY7C1380A CY7C1382A CY7C1382

    CY7C1380B

    Abstract: CY7C1382 CY7C1382B
    Text: 1CY7C1380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • •


    Original     		PDF 1CY7C1380B CY7C1380B CY7C1382B CY7C1380B CY7C1382 CY7C1382B

    AS5SP512K36DQ

    Abstract: No abstract text available
    Text: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88


    Original     		PDF AS5SP512K36DQ AS5SP512K36DQ

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


    Original     		PDF AS5SP256K36DQ

    Untitled

    Abstract: No abstract text available
    Text: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\


    Original     		PDF AS5SP256K36DQ AS5SP256K36DQ

    AS5SP256K36DQ

    Abstract: transistor w2d 850C
    Text: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.


    Original     		PDF AS5SP256K36DQ AS5SP256K36DQ transistor w2d 850C

    w2d 98

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


    Original     		PDF AS5SP256K36DQ AS5SP256K36DQ w2d 98

    M5M5V5636GP

    Abstract: M5M5V5636GP-25
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5V5636GP-25 M5M5V5636GP

    M5M5V5636GP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5V5636GP

    M5M5T5636GP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5T5636GP

    M5M5V5A36GP

    Abstract: M5M5V5A36GP-75 M5M5V5A36GP-85
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5V5A36GP M5M5V5A36GP-75 M5M5V5A36GP-85

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5T5636UG

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M5M5Y5636TG

    VOICE RECORDER IC

    Abstract: W51300 VOICE RECORDER circuits 14 pin ic recorder voice VOICE RECORDER playback system SPK Electronics voice ic
    Text: W51300 FLASH VR CONTROLLER GENERAL DESCRIPTION The W51300 is a voice recorder IC which contains A/D and D/A converters to digitize and reproduce voice signals. An anti-alias/smoothing filter, AGC circuit, MIC preamplifier, and speaker power amplifier are used to smooth the input voice and set the output voice to a certain volume while


    Original     		PDF W51300 W51300 VOICE RECORDER IC VOICE RECORDER circuits 14 pin ic recorder voice VOICE RECORDER playback system SPK Electronics voice ic

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz  Fast access times: 3.0ns, 3.5ns, 3.8ns & 4.0ns  Fast OE# access times: 3.0ns, 3.5ns, 3.8ns 4.0ns  +3.3V power supply VCC


    Original     		PDF 512Kx32 133MHz 119-bump WED2DL32512V

    Untitled

    Abstract: No abstract text available
    Text: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two


    Original     		PDF WED2DL32512V 512Kx32 133MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst


    Original     		PDF WED2DL32512V 512Kx32 133MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION „ Fast clock speed: 200, 166, 150 & 133MHz „ Fast access times: 2.5ns, 3.5ns, 3.8ns & 4.0ns „ Fast OE# access times: 2.5ns, 3.5ns, 3.8ns 4.0ns „ Single +3.3V power supply VCC


    Original     		PDF 512Kx32 133MHz 119-bump WED2DL32512V