Untitled
Abstract: No abstract text available
Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0
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AS5SP256K36DQ
MS026-D/BHA
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CY7C1380B
Abstract: CY7C1382 CY7C1382B
Text: 380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • •
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CY7C1380B
CY7C1382B
CY7C1380B
CY7C1382
CY7C1382B
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CY7C1386B-133AC
Abstract: CY7C1386B CY7C1386B-200AC CY7C1387B
Text: 1CY7C1386B CY7C1386B CY7C1387B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined DCD SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • •
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1CY7C1386B
CY7C1386B
CY7C1387B
CY7C1386B-133AC
CY7C1386B
CY7C1386B-200AC
CY7C1387B
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CY7C1441V33
Abstract: CY7C1443V33
Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,
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CY7C1441V33
CY7C1443V33
CY7C1447V33
36/2M
18/512K
133-MHz
36/2M
18/512K
150-MHz
CY7C1441V33
CY7C1443V33
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AS5SP128K32DQ
Abstract: CMOS linear array
Text: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time
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AS5SP128K32DQ
MS026-D/BHA
AS5SP128K32DQ
CMOS linear array
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AS5SP512K36DQ
Abstract: No abstract text available
Text: SSRAM AS5SP512K36DQ A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns
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AS5SP512K36DQ
AS5SP512K36DQ
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CY7C1382
Abstract: No abstract text available
Text: CY7C1380A CY7C1382A PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • • •
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CY7C1380A
CY7C1382A
CY7C1382
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CY7C1380B
Abstract: CY7C1382 CY7C1382B
Text: 1CY7C1380B CY7C1380B CY7C1382B PRELIMINARY 512K x 36 / 1 Mb x 18 Pipelined SRAM Features inputs, address-pipelining Chip Enable CE , burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • •
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1CY7C1380B
CY7C1380B
CY7C1382B
CY7C1380B
CY7C1382
CY7C1382B
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AS5SP512K36DQ
Abstract: No abstract text available
Text: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88
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AS5SP512K36DQ
AS5SP512K36DQ
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Untitled
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
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Untitled
Abstract: No abstract text available
Text: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\
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AS5SP256K36DQ
AS5SP256K36DQ
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AS5SP256K36DQ
Abstract: transistor w2d 850C
Text: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.
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AS5SP256K36DQ
AS5SP256K36DQ
transistor w2d
850C
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w2d 98
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
AS5SP256K36DQ
w2d 98
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M5M5V5636GP
Abstract: M5M5V5636GP-25
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5V5636GP-25
M5M5V5636GP
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M5M5V5636GP
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5V5636GP
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M5M5T5636GP
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5T5636GP
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M5M5V5A36GP
Abstract: M5M5V5A36GP-75 M5M5V5A36GP-85
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5V5A36GP
M5M5V5A36GP-75
M5M5V5A36GP-85
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5T5636UG
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5Y5636TG
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VOICE RECORDER IC
Abstract: W51300 VOICE RECORDER circuits 14 pin ic recorder voice VOICE RECORDER playback system SPK Electronics voice ic
Text: W51300 FLASH VR CONTROLLER GENERAL DESCRIPTION The W51300 is a voice recorder IC which contains A/D and D/A converters to digitize and reproduce voice signals. An anti-alias/smoothing filter, AGC circuit, MIC preamplifier, and speaker power amplifier are used to smooth the input voice and set the output voice to a certain volume while
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W51300
W51300
VOICE RECORDER IC
VOICE RECORDER circuits
14 pin ic recorder voice
VOICE RECORDER playback system
SPK Electronics
voice ic
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz Fast access times: 3.0ns, 3.5ns, 3.8ns & 4.0ns Fast OE# access times: 3.0ns, 3.5ns, 3.8ns 4.0ns +3.3V power supply VCC
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512Kx32
133MHz
119-bump
WED2DL32512V
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Untitled
Abstract: No abstract text available
Text: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two
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WED2DL32512V
512Kx32
133MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst
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WED2DL32512V
512Kx32
133MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz Fast access times: 2.5ns, 3.5ns, 3.8ns & 4.0ns Fast OE# access times: 2.5ns, 3.5ns, 3.8ns 4.0ns Single +3.3V power supply VCC
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512Kx32
133MHz
119-bump
WED2DL32512V
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