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    BV UI 21 Search Results

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    BV UI 21 Price and Stock

    Texas Instruments LMV321AUIDBVR

    Operational Amplifiers - Op Amps Single, 5.5-V, 1-MHz, 4-mV offset voltage, RRO operational amplifier 5-SOT-23 -40 to 125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMV321AUIDBVR 19,201
    • 1 $0.48
    • 10 $0.272
    • 100 $0.162
    • 1000 $0.106
    • 10000 $0.073
    		Buy Now

    HAHN - Elektrobau GmbH & Co KG BV UI 21 0008

    FLAT TRANSFORMERS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BV UI 21 0008 130 4
    • 1 -
    • 10 $19.7571
    • 100 $18.0833
    • 1000 $16.9467
    • 10000 $16.9467
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    HAHN - Elektrobau GmbH & Co KG BV UI 21 0002

    Power Transformer 6000Vrms 1VA 12 Terminal PC Pin Thru-Hole
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BV UI 21 0002 120 8
    • 1 -
    • 10 $10.597
    • 100 $9.7761
    • 1000 $8.5571
    • 10000 $8.5571
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    HAHN - Elektrobau GmbH & Co KG BV UI 21 0013

    Flat Transformers
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BV UI 21 0013 96 8
    • 1 -
    • 10 $10.0149
    • 100 $9.2239
    • 1000 $9.2239
    • 10000 $9.2239
    		Buy Now

    HAHN - Elektrobau GmbH & Co KG BVUI21 0003

    Power Transformer 6000Vrms 1VA 12 Terminal PC Pin Thru-Hole
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BVUI21 0003 81 8
    • 1 -
    • 10 $10.403
    • 100 $9.597
    • 1000 $9.597
    • 10000 $9.597
    		Buy Now
    Find more BV UI 21 price and stock on Findchips.com

    BV UI 21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vde 0551

    Abstract: hahn transformer VDE 0551 hahn transformer EN 60742 BV UI 21 0013 BV UI 21 HAHN bv 20 hahn-transformers hahn BV UI 30 hahn BV
    Text: The HAHN UI 21 Series Quality and efficiency in series COMPACT DESIGN AND CONVINCING LONGTERM DURABILITY HAHN - flat transformers UI 21, UI 30, UI 39, UI 48 performance 1.0 VA highest security durability absolutely short-circuit-proof at temperature high dielectric strength


    Original     		PDF 0551/EN 60742regulations, vde 0551 hahn transformer VDE 0551 hahn transformer EN 60742 BV UI 21 0013 BV UI 21 HAHN bv 20 hahn-transformers hahn BV UI 30 hahn BV

    hahn BV UI 30

    Abstract: en 61558 hahn BV HAHN HAHN ui 39 BV UI 21 HAHN ta UI30 HAHN bv 20
    Text: UI 21 Трансформаторы плоского типа Выходная мощность: 1,0 BA • Мощность – до 1,0 ВА • Температурный класс 70°C/B • Абсолютная защита от токов короткого замыкания


    Original     		PDF

    BV UI 21

    Abstract: bv 304 UI30 bv ui 304 BV UI
    Text: UI 30 Трансформаторы плоского типа Выходная мощность: 3,0 BA • Мощность – до 16,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного


    Original     		PDF

    BV UI 396 0079

    Abstract: UI39 ENEC-05 BV UI 396 0084
    Text: UI 39 Трансформаторы плоского типа Выходная мощность: 10,0 BA • Мощность – до 30,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного


    Original     		PDF

    BV UI 21

    Abstract: No abstract text available
    Text: UI 48 Трансформаторы плоского типа Выходная мощность: 40,0 BA • Мощность – до 60,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного


    Original     		PDF

    4pk sot23

    Abstract: bm 8900 SOT-23-6 D/A maa 503 OEM 615 TQ5M31 mbae o3cc
    Text: WIRELESS COMMUNICATIONS DIVISION o#Üû„T6 Vdd û2LS62 Gain/IP3/current ¯ adjustment 50 ohm LO Ä INPUT Vdd IF GIC GND LO RF WT8P64 Ü"\°í Ú#LF IF OUT „2 GND „zst 50 ohm RF INPUT # Ä ¶¬ ân TQ5M31 Q… M= \ PCS Á& Q¡, ISM IYe M:, GPS e-}, L


    Original     		PDF 2LS62 WT8P64 TQ5M31 45-500Mhzi VRW056 4pk sot23 bm 8900 SOT-23-6 D/A maa 503 OEM 615 mbae o3cc

    n611

    Abstract: 2n5188
    Text: unl- 2onauatoi ZPtoauet*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A TELEPHONE: (973 378-2922 (212) 227-8006 FAX-(973| 2N5188 SILICON NPN HIGH VOLTAGE TRANSISTOR Max/mum Ratings, Absolute-Maximum Values: OOU.KOTOIt-TO-BASK V U l / l ' A C K . Venn OOUJiCTOIi-TO-KMITTKIl


    Original     		PDF 2N5188 2NS188 n611

    IEC-947-5-1 AC15 B300

    Abstract: IEC 947-1 B300 DC-13 R300 kv86
    Text: Control and signalling units Ø 16 General : pages 2 to 5 References : pages 8 to 21 Dimensions : pages 22 to 25 Harmony style 6 Pushbuttons, switches and pilot lights, with double insulated bezel Characteristics Environment Conforming to standards IEC 947-1, IEC 947-5-1, IEC 947-5-4,


    Original     		PDF C22-2 AC-15 DC-13 VA-230 AC-15, IEC-947-5-1 AC15 B300 IEC 947-1 B300 DC-13 R300 kv86

    LA9LB920

    Abstract: SCHNEIDER MOTOR PROTECTION circuit breaker IEC 439-1 LA9-LB920 GV3-ME40 GK3EF40 GV3-A03 GV3A01 schneider GV2ME GV3-A01
    Text: Characteristics TeSys protection components Thermal-magnetic motor circuit-breakers Environment Circuit-breaker type GV2-ME Conforming to standards EN 60947-1, 947-2, 947-4-1, EN 60204, UL 508, CSA C22-2 n° 14, NF C 63-650, 63-120, 79-130, VDE 0113, 0660


    Original     		PDF C22-2 GV2-M/01: LA9-LB920 LA9LB920 SCHNEIDER MOTOR PROTECTION circuit breaker IEC 439-1 LA9-LB920 GV3-ME40 GK3EF40 GV3-A03 GV3A01 schneider GV2ME GV3-A01

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    transistor GR 345

    Abstract: TIC COL 02 25CC SD1495 SD1495-3 A 798 transistor
    Text: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1495-3 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY


    OCR Scan     		PDF SD1495 900-960MHZ 960MHz SD1495-3 SD1495-3 960MHz S88SDI4D5 transistor GR 345 TIC COL 02 25CC A 798 transistor

    5n120bnd

    Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
    Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		PDF HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS HGTG5N120BN, HGT1S5N120BNDS TA49308. TA49058 RHRD6120) 1-800-4-HARRIS 5n120bnd transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND

    Untitled

    Abstract: No abstract text available
    Text: Infineon ILD205T/206T/207T/211T/213T/217T FEATURES • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option Conforms to ElA Standard 481-2 • Isolation Test Voltage, 3000 VRMS


    OCR Scan     		PDF ILD205T/206T/207T/211T/213T/217T ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T, E52744 205T/206T/207T/211T/213T/217T 1-888-lnfineon

    EE-25 transformer

    Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
    Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    OCR Scan     		PDF APT30D100B APT30D90B APT30D80B O-247 O-247AD EE-25 transformer Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer CR diode transient

    cl6d

    Abstract: No abstract text available
    Text: M GE D FASCO 3 4 clci73ô 0QQ105S INDS/ b E 3 SENI SENISYS CLED1 CLED1A CLED1B CLED1C ± .0 0 5 -.210 DIA± .0 0 7 -.183 DIAWINDOW ±.011 .147 OIA Gallium Arsenide Infrared Emitting Diode ±.010 .200 GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed


    OCR Scan     		PDF 34RT73Ã 0QQ105S 100mA 1009080S 302010-O- If350 cl6d

    Untitled

    Abstract: No abstract text available
    Text: /=T SGS-THOMSON A T /. Q a n K g ^ n L g g irM O ig i_ A M 2 7 2 9 - 1 1 0 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S • R EFR AC TO R Y/G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY


    OCR Scan     		PDF AM2729-110 00bSDG3

    MGA231

    Abstract: c1718 transistor c1718 C1894 C2090 MCA230 MCA231 MCA255
    Text: GENL INSTRv OPTOELEK 88 DE | aSTOlää DDDSTDl a GENERAL INSTRUMENT PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 D ES C R IPTIO N P A C K A G E D IM EN SIO N S The M CA230, MCA231 and M C A 255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silico n


    OCR Scan     		PDF MCA230 MCA231 MCA255 t3-56 C2090 C2084 MCA230, MCA255 c12b5 MGA231 c1718 transistor c1718 C1894 C2090

    BAVP

    Abstract: No abstract text available
    Text: ADVANCED POùlER TECHNOLOGY b lE D □ E S T 'IG 'i DDDDflDS TOT • AVP ADVANCED POW ER Te c h n o l o g y • .«<■> ill POWER MOS IV™ APT802R4GN APT752R4GN APT802R8GN APT752R8GN 800V 750V 800V 750V 4.3A 4.3A 4.0A 4.0A 2.40Q 2.40i2 2.80Q 2.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT802R4GN APT752R4GN APT802R8GN APT752R8GN 802R4GN 752R8GN 802R8GN APT802R4/802R8GN O-257AA BAVP

    6045h

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT6040HN APT5540HN APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN APT6040/5540/6045/5545HN APT5S40/S545HI 6045h

    transistor 1FX

    Abstract: sc-59 a9 015GI
    Text: UMH8N/IMH8A h ÿ > y Z. & / T ransistors UMH8N ._ u o _ Ilw IH Ö A Isolated Mini-Mold Device O / ' Ç — £ K 7 'f / V in verier Driver Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t l i ­ IMH8A UMH8N 11•1-UZ I 0.1 t t « C z m < n 9 ÿ ^ )i h 7 > V ^ i'


    OCR Scan     		PDF SC-70) SC-59) 10mA/1mA transistor 1FX sc-59 a9 015GI

    LM119

    Abstract: No abstract text available
    Text: L M 1 1 9 - L M 219 L M 319 S G S -T H O M S O N im HIGH SPEED DUAL COMPARATORS . . . . . TWO INDEPENDENT COMPARATORS OPERATES FROM A SINGLE+5V SUPPLY TYPICALLY80ns RESPONSE TIME AT ±15V MINIMUM FAN-OUT OF 2 EACH SIDE MAXIMUM INPUT CURRENT OF 1nA OVER OPERATING TEMPERATURE RANGE


    OCR Scan     		PDF TYPICALLY80ns DIP14 LM119 LM219 LM319 LM119

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8

    Untitled

    Abstract: No abstract text available
    Text: KSP24 NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Tfl = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta= 25°C) Derate above 25 °C Junction Temperature


    OCR Scan     		PDF KSP24

    2N5001

    Abstract: FA 5501 SFT3997 SFT5001 VN68
    Text: SFT5001 SSDI 5 AMP HIGH SPEED PNP TRANSISTOR 1 4 8 4 9 F I R E S T O N E BLVD. L A M I R A D A , CA. 9 0 6 3 8 213 9 2 1 - 9 6 6 0 F A X (213) 9 2 1 - 2 3 9 6 150 VOLTS C A S E S T V' 1 EE xT E l D E E d T O — 5 3 ALL TERMINALS ISOLATED X FEATURES FROM


    OCR Scan     		PDF SFT5001 2N5001 100MHz SFT3997 20Vdc, 100mAdc, SFT5001 FA 5501 SFT3997 VN68