BUZ71 application
Abstract: TT220 BUZ71 BUZ71FI
Text: BUZ71 BUZ71FI Æ 7 SGS-THOMSON ^ 7 # [ÜD^OEllLIgTrKOliOigi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^O S on BUZ71 BUZ71 FI 50 V 50 V 0.1 n 0.1 Si 'o ' 14 A 12 A • VERY FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE, REDUCED SIZE AND COST
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BUZ71
BUZ71FI
O-220
500ms
150-C)
BUZ71 application
TT220
BUZ71FI
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Untitled
Abstract: No abstract text available
Text: BUZ71 N - CHANNEL 50V - 0.085ft - 14A -TO-220 STripFET POWER MOSFET TYPE BUZ71 V dss 50 V R d Id S o ii < 0.1 Q. 14 A . • TYPICAL RDS(on) = 0.085 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
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BUZ71
085ft
-TO-220
T0-220
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BUZ71
Abstract: BUZ71 ST
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
O-220
175oC
BUZ71
BUZ71 ST
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BUZ71
Abstract: BUZ71 dc to ac
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
O-220
175oC
BUZ71
BUZ71 dc to ac
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BUZ71
Abstract: BUZ71 application BUZ71 dc to ac
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
O-220
175oC
BUZ71
BUZ71 application
BUZ71 dc to ac
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BUZ71
Abstract: stmicroelectronics datecode BUZ71 ST
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 14A -TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.1 Ω 14 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
-TO-220
175oC
O-220
BUZ71
stmicroelectronics datecode
BUZ71 ST
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BUZ71
Abstract: BUZ71FI
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
BUZ71FI
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BUZ71
Abstract: Morocco buz71fi BUZ71FI
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
Morocco buz71fi
BUZ71FI
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schematic diagram dc-ac welding inverter
Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
schematic diagram dc-ac welding inverter
schematic diagram dc-ac welding inverter CIRCUIT
schematic diagram UPS
schematic diagram welding inverter
schematic diagram dc-ac inverter
schematic diagram welding inverter control
schematic diagram UPS 600 Power free
high current smps circuit diagram
BUZ71 application
inverter irf840
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BUZ71
Abstract: BUZ71FI iso vg 46
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
BUZ71FI
iso vg 46
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TT220
Abstract: transistor t220 BUZ71 dc to ac TT 220
Text: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,
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BUZ71
BUZ71FI
BUZ71
500ms
TT220
transistor t220
BUZ71 dc to ac
TT 220
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Untitled
Abstract: No abstract text available
Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
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irf540 mosfet control motor
Abstract: std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16
Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06
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O-220
STP12PF06
STP80NF03L-04
STP80NE03L-06
STP60NE03L-10
STP60NE03L-12
STP60NF03L
STP3015L
STP40NE03L-20
STP40NF03L
irf540 mosfet control motor
std29nf03l
ignition switch on coil smart igbt
gear box motor 12v
12v dc motor igbt control
VBG15NB37
STP12PF06 morocco
smart ignition igbt
rain SENSOR
STP60NE06-16
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BUZ71 application
Abstract: No abstract text available
Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features
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BUZ71
O220AB
TA9770.
BUZ71 application
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VBG15NB37
Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06
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O-220
STP12PF06
STP80NF03L-04
STP80NE03L-06
STP60NE03L-10
STP60NE03L-12
STP60NF03L
STP3015L
STP40NE03L-20
STP40NF03L
VBG15NB37
STP3020L
IRF540 application
STP24NF10
BUZ10
STGP10NB60S
stp80* equivalent
smart ignition igbt VBG15NB37
BUZ11
STD38NF03L
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71
TA9770.
O-220AB
BUZ71 application
BUZ71
TB334
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BUZ71
Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
BUZ71A
TB334
TO 220AB Mosfet
TA9770
transistor buz71a
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71
TA9770.
BUZ71
BUZ71 application
TB334
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transistor 647
Abstract: No abstract text available
Text: rZT SGS-THOMSON * 7M. [ÄliSimitgTßMOgS BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils Al A u /C r/N i/A u
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BUZ71
transistor 647
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BUZ71 dc to ac
Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,
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S3T31
BUZ71
T0220AB;
BUZ71_
T-39-11
VDs-10V
BUZ71 dc to ac
transistor buZ71
BUZ71
T0220AB
buz71 philips
IR 5331
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transistor 647
Abstract: BUZ71 PVAPOX 647 transistor
Text: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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BUZ71
95x95
16x18
transistor 647
PVAPOX
647 transistor
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Untitled
Abstract: No abstract text available
Text: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
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BUZ71A
-TO-220
BUZ71
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Untitled
Abstract: No abstract text available
Text: i l S E M E L A B 37E D L T D 0133187 DDGGSbT 2 • SC 1LB T - 3 9 - 1 1 SEMELAB ul wü - ‘. i. O c^ i o Ci 7 1 : ^ S J tr BUZ71 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm 10. 3 _ max. ¿.5mai 1.3 5.9 2.8 min. f ■t 15.8 APPLICATIONS
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BUZ71
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BUZ71
Abstract: diode din 4147
Text: BUZ71 {£} HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 14A, 50V • rDS on = 0-1 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics
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BUZ71
BUZ71
diode din 4147
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