BUZ MOSFET
Abstract: power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf TS-001-5 IRF MOSFET driver RFD15N05SM TO-252 MOSFET
Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ TYPES BUZ XXX EQUIVALENT EUROPEAN PART NUMBER PART TYPE EITHER 2 OR 3 DIGITS HP, HRF TYPES
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O-263,
O-252,
OT-223
O-252
O-220
TS-001
O-220)
O-247
BUZ MOSFET
power MOSFET IRF data
P-CHANNEL 25A TO-247 POWER MOSFET
rfd15n05
TO-205A
mosfet p-channel 10A irf
TS-001-5
IRF MOSFET driver
RFD15N05SM
TO-252 MOSFET
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buz10
Abstract: No abstract text available
Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ10
O-220
175oC
O-220
buz10
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BUZ11
Abstract: buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
Text: BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET T YPE BUZ 11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11
O-220
175oC
BUZ11
buz11 equivalent
BUZ11 in electronic pulse schematic
620 tg diode
datecode G1
mosfet schematic solenoid driver
stmicroelectronics datecode TO-220
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BUZ10
Abstract: buz10 equivalent stmicroelectronics datecode
Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ10
O-220
175oC
BUZ10
buz10 equivalent
stmicroelectronics datecode
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PDF
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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Untitled
Abstract: No abstract text available
Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,
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OCR Scan
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BUZ900P
BUZ901P
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PDF
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BUZ MOSFET
Abstract: No abstract text available
Text: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING
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OCR Scan
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G0GDS42
BUZ900D
BUZ901D
BUZ905D
BUZ906D
BUZ MOSFET
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HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED
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OCR Scan
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BUZ905D
BUZ906D
-100mA
-160V
-200V
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
2SJ56 2sk176
mosfet cross reference
2sk135 audio application
lateral mosfet audio amplifier
BUZ901P
2sJ50 mosfet
hitachi mosfet power amplifier audio application
BUZ900P
BUZ900D
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BUZ MOSFET
Abstract: No abstract text available
Text: bDE D I 5133107 000D530 ST 1 • S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING
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OCR Scan
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000D530
BUZ905
BUZ906
BUZ900D
BUZ905D
BUZ901D
BUZ906D
BUZ MOSFET
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49nF
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics
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OCR Scan
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O-218AC
49nF
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Untitled
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics
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OCR Scan
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O-220AB
L320Vv
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PDF
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BUZ45A
Abstract: BUZ45 transistor 6.z transistor 125W
Text: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics
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OCR Scan
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O-204AA
BUZ45A
BUZ45
transistor 6.z
transistor 125W
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buz 90 af
Abstract: TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72
Text: Standard Power MOSFETs BUZ 72 A File N u m b e r 2262 N-Channel Enhancement-Mode Power Field-Effect Transistors 9 A, 100 V TDSIon = 0.25 D. N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ited a N anosecond s w itching speeds m Linear transfer characteristics
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OCR Scan
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O-22CIAB
buz 90 af
TL 2262
IC 2262 AF
BUZ 72 A
2262 af
tl 2262 am
BUZ72
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BUZ 338
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 73 A File Number 2263 N-Channel Enhancement-Mode Power Field-Effect Transistors 5.8 A, 200 V TDSIoni = 0.6 O N-CHANNEL ENHANCEMENT MODE D Features: • SOA is p ow er-dissipation lim ited m N anosecond s w itching speeds m Linear transfer characteristics
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OCR Scan
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O-220AB
BUZ 338
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BUZ 349 mosfets
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics
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OCR Scan
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92CS-33741
92gs-44236
BUZ 349 mosfets
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PDF
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Untitled
Abstract: No abstract text available
Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES
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OCR Scan
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BUZ900
BUZ901
BUZ900D
BUZ905D
BUZ901D
BUZ906D
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PDF
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Untitled
Abstract: No abstract text available
Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •
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OCR Scan
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BUZ905P
BUZ906P
O-247
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PDF
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BUZ45
Abstract: No abstract text available
Text: Standard Power MOSFETs File No. 2257 BUZ 45 N-Channel Enhancement-Mode Power Field-Effect Transistors 9.6 A, 500 V N -CH A N N EL E N H A N C EM EN T M ODE rosioni = 0 .6 O Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds
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OCR Scan
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O-204AA
BUZ45
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PDF
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Untitled
Abstract: No abstract text available
Text: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES
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OCR Scan
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Q000533
BUZ905D
BUZ906D
300jiS
BUZ900D
BUZ901D
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PDF
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transistor buz 311
Abstract: BUZ41 BUZ 41 A diagram
Text: Standard Power MOSFETs BUZ 41 A File N u m b e r 2256 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 4.5 A, 500 V rDS on = 1.5 O Features: • SOA is p ow er-dissipation lim ite d • N anosecond s w itching speeds m Linear transfer characteristics
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OCR Scan
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O-220AB
transistor buz 311
BUZ41
BUZ 41 A diagram
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PDF
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BUZ 325
Abstract: BUZ45
Text: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds
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OCR Scan
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O-204ig.
BUZ 325
BUZ45
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PDF
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bu245a
Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
Text: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00
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OCR Scan
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0QD5704
O-204
O-205
O-218
O-220
rfm4n40
rfm7n40
rfm12n40
rfh12n40
buz351
bu245a
2n6895
BU245
RFM12P10
RFP12P10
2N6897
to205
rfm3n
RFP8P08
rfp10p15
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PDF
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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OCR Scan
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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PDF
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BUZ20
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics
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OCR Scan
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MOSFETs-BUZ20
O-220AB
92GS-441
BUZ20
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PDF
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