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    BUW64B TRANSISTOR Search Results

    BUW64B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BUW64B TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUW64A

    Abstract: buw64 BUW64C BUW64B
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage


    Original     		BUW64A/B BUW64A BUW64B BUW64C BUW64A buw64 BUW64C BUW64B PDF

    BUW64C

    Abstract: BUW64A RCA-BUW64A 2n6354 H 6 31948 BUW64B transistor jcs CA37
    Text: BUW64A, BUW64B, BUW64C HARRIS SEMICOND SECTOR File Number SbE D • 4302271 High-Current, Silicon N-P-N VERSAWATT Transistors 0G407n 1199 443 « H A S TERM INAL DESIGNATIONS Switching Applications Features: ■ Fast switching speed at temperatures up to 125° C


    OCR Scan     		BUW64A, BUW64B, BUW64C 7T35-/? 00407n O-220AB RCA-BUW64A, BUW64C BUW64A RCA-BUW64A 2n6354 H 6 31948 BUW64B transistor jcs CA37 PDF

    BUW64A

    Abstract: No abstract text available
    Text: BUW64A, BUW64B, BUW64C File Number High-Current, Silicon N-P-N VERSAWATT Transistors 1199 TERM INAL DESIGNATIONS Switching Applications F LA N G E O Feature*: • Fast switching speed at temperatures up to 125° C • Low V ersât) ■ V ER SAW ATT plastic package


    OCR Scan     		BUW64A, BUW64B, BUW64C 92CS-39969 O-220AB BUW64A PDF

    BUW64C

    Abstract: BUW64A buw64b TRANSISTOR CA3725 BUW64B W64A BUW64
    Text: 01 3875081 G E SOLID DE Jj 3 f l 7 S 0 û l STATE DD17Sf lb S u T'53'/ 01E 17586 i |~ Pro Electron Power Transistors File Number 1199 BUW64A, BUW64B, BUW64C High-Current, Silicon N-P-N VERSAWATT Transistors Switching Applications T E R M IN A L D E SIG N ATIO N S


    OCR Scan     		DD17Sflb BUW64A, BUW64B, BUW64C 92GS-39969 O-22QAB RCA-BUW64A, BUW64C BUW64Ã BUW64A buw64b TRANSISTOR CA3725 BUW64B W64A BUW64 PDF

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A PDF

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


    OCR Scan     		PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF