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    BUV48 APPLICATIONS Search Results

    BUV48 APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC3676EUJ#TRPBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676IUJ-1#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ELXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676HUJ#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ILXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy

    BUV48 APPLICATIONS Datasheets Context Search

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    buv48 equivalent

    Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
    Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


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    PDF BUV48/D* BUV48/D buv48 equivalent 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854

    buv48 equivalent

    Abstract: BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735
    Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


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    PDF BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735

    buv48 equivalent

    Abstract: BUV48 2N3763 MOTOROLA 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
    Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


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    PDF BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48 2N3763 MOTOROLA 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854

    mje13009 equivalent

    Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


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    PDF BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202

    buv48 equivalent

    Abstract: 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854
    Text: ON Semiconductort BUV48 BUV48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated


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    PDF BUV48 BUV48A BUV48/BUV48A r14525 BUV48/D buv48 equivalent 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854

    BUV48

    Abstract: BUV48A buv48 equivalent BUV48 Applications
    Text: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2


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    PDF BUV48 BUV48A BUV48 BUV48A buv48 equivalent BUV48 Applications

    BUV48V

    Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904
    Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE


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    PDF BUV48, BUV48A OT-93 BUV48 BUV48V by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904

    buv48 equivalent

    Abstract: BUV48 300V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48 DESCRIPTION •High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such


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    PDF BUV48 Current-Continuo100 buv48 equivalent BUV48 300V transistor npn 2a

    buv49

    Abstract: BUV48 SE BUW49 buv48 TS morocco BUW48
    Text: BUW48 BUW49 HIGH CURRENT NPN SILICON TRANSISTOR n n n n SGS-THOMSON PREFERRED SALESTYPES HIGH CURRENT CAPABILITY VERY LOW SATURATION VOLTAGE AT IC = 20A FAST TURN-ON AND TURN-OFF APPLICATIONS n HIGH FREQUENCY AND EFFICENCY CONVERTERS n SWITCHING REGULATORS


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    PDF BUW48 BUW49 O-218 buv49 BUV48 SE BUW49 buv48 TS morocco

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent

    TIC106M SCR

    Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    buv48 equivalent

    Abstract: v48A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BU V48A SW ITCHMODE II Series NPN Silicon Pow er TVansistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS The BUV48/BUV48A transistors are designed for high-voltage, high-speed, power


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    PDF BUV48/BUV48A BUV48 buv48 equivalent v48A

    buv48

    Abstract: No abstract text available
    Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • Rugged Triple-Diffused Planar Construction • 15 A Continuous Collector Current • 1000 Volt Blocking Capability AUG UST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE


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    PDF BUV48, BUV48A OT-93 BUV48 BUV48A

    BUV48 SE

    Abstract: I v48a
    Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA B U V48 B UV48A S W IT C H M O D E II S e rie s NPN S ilic o n P o w e r T ra n s is to rs 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS The B U V 4 8 /B U V 4 8 A transisto rs are d e sig ned for h ig h -v o lta g e , h ig h -s p e e d , pow er


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    PDF BUV48/D UV48A BUV48 SE I v48a

    BUV48 SE

    Abstract: SGSD00036 kkz 10
    Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous


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    PDF SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10

    BUV48I

    Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47
    Text: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,


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    PDF BUX47/V47/V47FI BUX47A/V47A/47AFI BUX47/A, BUV47/A, BUV47FI/AFI O-218 SOWATT218 BUX47 BUV47 BUV48I BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a

    kkz 10

    Abstract: BUV48
    Text: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous


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    PDF SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48

    buv48

    Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
    Text: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique


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    PDF 15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92

    D100E

    Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
    Text: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same


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    PDF SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 D100E ic uc3842 BUV48 SE sgsd00031 uc3842 application 600V BU508

    u810 diode

    Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
    Text: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con­


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    PDF SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 u810 diode diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508