transistor 9619
Abstract: M 9619 BUV18
Text: NPN SILICON SWITCHING TRANSISTOR BUV18X • High Current, Fast Switching, Low VCE sat . • Hermetic Metal TO3 Package. • Ideally suited for Motor Drive Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUV18X
O-204AE)
transistor 9619
M 9619
BUV18
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Untitled
Abstract: No abstract text available
Text: BUV18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18
O204AE)
18-Jun-02
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Untitled
Abstract: No abstract text available
Text: BUV18X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18X
O204AE)
17-Jul-02
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IC 5369
Abstract: BUV18 to-204ae NPN 160v 250W transistors TO-204AE Package BUV19
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
IC 5369
BUV18
to-204ae
NPN 160v 250W transistors
TO-204AE Package
BUV19
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BUV18
Abstract: No abstract text available
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
BUV18
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Untitled
Abstract: No abstract text available
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
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BUV18X
Abstract: No abstract text available
Text: BUV18X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18X
O204AE)
1-Aug-02
BUV18X
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Untitled
Abstract: No abstract text available
Text: BUV18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18
O204AE)
1-Aug-02
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transistor 9619
Abstract: No abstract text available
Text: NPN SILICON SWITCHING TRANSISTOR BUV18X • High Current, Fast Switching, Low VCE sat . • Hermetic Metal TO3 Package. • Ideally suited for Motor Drive Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUV18X
O-204AE)
transistor 9619
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PDF
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Untitled
Abstract: No abstract text available
Text: BUV18X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18X
O204AE)
18-Jun-02
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PDF
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Untitled
Abstract: No abstract text available
Text: BUV18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV18
O204AE)
17-Jul-02
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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BUW23
Abstract: No abstract text available
Text: SEMELAB LTD 37E J> 6133187 DDDOOSb 7 • SMLB SEMELABI 1VpeN0- Option'111' Polarity Packa9e VcEO t ^ hFE« VCE/*C BUV18 BUV19 BUV20 BUV21 BUV22 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN 11 * * * * TO 3 T03 T03 TO 3 T03 60 80 125 200 250 90 50
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BUV18
BUV19
BUV20
BUV21
BUV22
20min
BUW23
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BUV18
Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
Text: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low
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T-33-IS
BUV18
BUV19
lr-/ln-10
18-BUV
transistor buv 90
BUV19
transistor buv
BUV18-BUV19
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transistor buv 90
Abstract: BUV18
Text: rz7 Ä 7# SCS-THOMSON BUV18 BUV19 NPN HIGH CURRENT SWITCHING TRANSISTORS • HIGH EFFICIENCY SW ITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON T O -3 D E S C R IP T IO N High current, high speed transistors suited for low voltage applications : high efficiency converters,
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BUV18
BUV19
transistor buv 90
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BUT13P
Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20
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GG004S4
BUS13
15min
BUS13A
BUS14A
BUS50
20min
BUS51
BUT13P
BLN20
BUT14
SOT93
BUV62
BUV24
BUV41
but72
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transistor buv18a
Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min
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MPSU10
MPSU02
MPSU03
MPSU04
MPSU01
MPSU01A
MPSU45#
MPSU60
MPSU52
MPSU51
transistor buv18a
motorola transistor cross reference
BUV18A
BUX98A motorola
N6030
BUT13
transistor buv10
MPSU06 transistor
MJ12005 MOTOROLA
MJ15021 "cross reference"
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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BUV18
Abstract: transistor buv 90 transistor buv transistor TL 431 g BUV19 BUV18-BUV19 buv18buv19 BUV10 iv-18 transistor SE 431
Text: _71B,ï2 3 7 S G S T H QPEÔt.711 7 • ' T ' 3 ' S - I S O M S O N B U V 1 8 ’H [ i O T « g S S G S-THOMSON B U V 1 9 3QE D NPN HIGH CURRENT SWITCHING TRANSISTORS ■ HIGH EFFICIENCY SWITCHING ■ VERY LOW SATURATION VOLTAGE AT 40A ■ FAST TURN-OFF AND TURN-ON
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BUV18
BUV19
BUV18
BUV19
16-BUV
transistor buv 90
transistor buv
transistor TL 431 g
BUV18-BUV19
buv18buv19
BUV10
iv-18
transistor SE 431
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