BUS23B
Abstract: No abstract text available
Text: BUS23B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUS23B
O204AE)
1-Aug-02
BUS23B
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NPN Transistor 10A 400V
Abstract: BUS23B 400V 10A NPN transistor BUS23C
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS23B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS23B 450V (Min)-BUS23C APPLICATIONS ·Designed for use in converters, inverters, switching
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BUS23B/C
-BUS23B
-BUS23C
BUS23B
BUS23C
NPN Transistor 10A 400V
BUS23B
400V 10A NPN transistor
BUS23C
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Untitled
Abstract: No abstract text available
Text: BUS23B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUS23B
O204AE)
18-Jun-02
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Untitled
Abstract: No abstract text available
Text: BUS23B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUS23B
O204AE)
17-Jul-02
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2N5101
Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN
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2N5050
O-213AA/TO-66
2N5052
2N5055
O-206AA/TO-18:
2N5056
2N5101
BUY46
BUW32
BUS13A
BUV21 ISO
BUZ171 equivalent
BUY22
BUT51P
BUX23
BUT13P
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2SC2751M
Abstract: 2sd377 bup13
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= TIP531 TIP531 TIP533 TIP533 TIP533 BUP23 BUP23 BUP23 BUS23 BUS23 20 25 30 35 40 45 50 (A) (A) (A) (A) CAl SDM4039 SDM4041 BU121 BUX13 SDM4040 SDM4045 SML14413 PTC6677P 2N6934 2N6934 MJH6677 RJH6677 2N6677
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O-247var
47Var
2SC2751M
2sd377
bup13
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Untitled
Abstract: No abstract text available
Text: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
001A7S1
BUS23
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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buw13a philips semiconductor
Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A
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S3T31
BUT18
O-220AB
180ns
BUT18A
BUT18F
OT-186
BUT18AF
BUT12
buw13a philips semiconductor
mje13008
BUS12
BUS12A
BUT12A
BUS13
BUT18AF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A
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180ns
OT-93
400ns
BUV298AV
BUV298V
OT-227B1
-220AB
BUT18F
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BUS23
Abstract: t-33-15 BISCR BUS23B BUS23C
Text: [[ N AMER P H I L I P S / D I S C R E T E asE D bbSB'IBl C 018751 3 • J BUS23 SERIES s. -r-2 3 -1 6 * SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bb53131
BUS23
T--23-I6"
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
t-33-15
BISCR
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buw13a philips semiconductor
Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V
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bki53T31
BUT18
BUT18A
O-220AB
180ns
BUT18F
BUT18AF
OT-186
BUT12
buw13a philips semiconductor
BUT22A
BUT228
BUP23A
SOT93
BUT18 PHILIPS SEMICONDUCTOR
mje13008
SOT-93
bus13 philips
transistor VCE 1000V
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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