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    BURST MODE Search Results

    BURST MODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71589SA25Y Renesas Electronics Corporation 32KX9 BURST MODE Visit Renesas Electronics Corporation
    71589SA25Y8 Renesas Electronics Corporation 32KX9 BURST MODE Visit Renesas Electronics Corporation
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-XP85B102DX-000 Amphenol Cables on Demand Amphenol SF-XP85B102DX-000 SFP28 25GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (Duplex LC Connector) by Amphenol XGIGA [XP85B102DX] Datasheet
    SF-QXP85B402D-000 Amphenol Cables on Demand Amphenol SF-QXP85B402D-000 QSFP28 100GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (MTP/MPO Connector) by Amphenol XGIGA [QXP85B402D] Datasheet

    BURST MODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH Research

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM ADVANCED Advanced 2x64Kx72, 3.3V Sync/Sync Burst Flow-Through Module Features • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear Burst MODE • Clock Controlled Registered Bank


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    PDF EDI2AG27264V 2x64Kx72, 2x64Kx72 EDI2AG27264VxxD1 Module64Kx72 2x64Kx72 01581USA EDI2AG27264V LH Research GW CSSRM1.PC-MFNQ-5C7E-1-700-R18

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


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    M200

    Abstract: W25P010A 32KX32
    Text: /* * * File Name: w25p010a.v * Product: W25P010A * Features: 32k x 32 burst pipelined SRAM * * access time: 6ns pipelined data output capability * 2T/2T mode Signal cycle desllected mode * * Intel burst mode & linear burst mode selection LBO


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    PDF w25p010a W25P010A 32kx32 M200

    104 white noise

    Abstract: WED2DG472512V-D2
    Text: White Electronic Designs WED2DG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION FEATURES „ 4x512Kx72 Synchronous, Synchronous Burst „ Pipeline Architecture; Single Cycle Deselect „ Linear and Sequential Burst Support via MODE pin


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    PDF WED2DG472512V-D2 4x512Kx72) WED2DG472512V 4x512Kx72. 14mmx20mm WED2DG472512V5D2 200MHz WED2DG472512V6D2 166MHz WED2DG472512V65D2 104 white noise WED2DG472512V-D2

    EDI2AG272128V-D1

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: White Electronic Designs EDI2AG272128V-D1 ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear Burst Mode Clock Controlled Registered Bank Enables E1#, E2#


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    PDF EDI2AG272128V-D1 2x128Kx72 EDI2AG272128VxxD1 2x128Kx72. 14mmx20mm EDI2AG272128V85D1* 4x256Kx72 EDI2AG272128V9D1* EDI2AG272128V10D1 EDI2AG272128V-D1 GW CSSRM1.PC-MFNQ-5C7E-1-700-R18

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED2CG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION FEATURES n 4x512Kx72 Synchronous, Synchronous Burst n Flow-Through Architecture n Linear and Sequential Burst Support via MODE pin


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    PDF 4x512Kx72) 4x512Kx72 50MHz WED2CG472512V-D2 WED2CG472512V9D2 WED2CG472512V10D2 WED2CG472512V12D2 WED2CG472512V15D2

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED2DG472512V-D2 ADVANCED* 16MB 4x512Kx72 SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION FEATURES n 4x512Kx72 Synchronous, Synchronous Burst n Pipeline Architecture; Single Cycle Deselect n Linear and Sequential Burst Support via MODE pin


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    PDF WED2DG472512V-D2 4x512Kx72) 4x512Kx72 WED2DG472512V5D2 WED2DG472512V6D2 WED2DG472512V65D2 WED2DG472512V7D2 200MHz 166MHz 150MHz

    EDI2AG272129V

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM DESCRIPTION FEATURES „ 2x128Kx72 Synchronous, Synchronous Burst „ Flow-Through Architecture „ Sequential Burst MODE „ Clock Controlled Registered Bank Enables E1#, E2#


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    PDF EDI2AG272129V 2x128Kx72 EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm EDI2AG272129V85D1* 2x128Kx72 EDI2AG272129V9D1* EDI2AG272129V10D1 EDI2AG272129V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear and Sequential Burst Support via MODE pin • Clock Controlled Registered Bank Enables E1\, E2\ •


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    PDF EDI2CG27264V EDI2CG27264VxxD2 2CG27264V EDI2CG27264V85D1* EDI2CG27264V9D1* EDI2CG27264V10D1 EDI2CG27264V12D1 2x64Kx72

    GS8320E18T-133

    Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
    Text: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


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    PDF GS8320E18/32/36T-xxxV 100-Pin 8320EV18 8320Exx GS8320E18T-133 GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225

    DT38

    Abstract: 1995 SDRAM
    Text: TN-04-38 WHAT IS BURST EDO? TECHNOLOGY, INC. TECHNICAL NOTE WHAT IS BURST EDO? INTRODUCTION Burst Extended Data-Out BEDO or pipeline nibble mode (as it has been termed by JEDEC), is basically an EDO DRAM that contains a pipeline stage and a 2-bit burst counter. This evolutionary approach to a high-speed DRAM


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    PDF TN-04-38 DT38 1995 SDRAM

    marking A00

    Abstract: 71128 GVT71128D18
    Text: GALVANTECH, INC. GVT71128D18 128K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 18 SRAM +3.3V POWER SUPPLY, FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


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    PDF GVT71128D18 GVT71128D18 072x18 71128D18 marking A00 71128

    burst SRAM

    Abstract: EDI2CG272128V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: EDI2CG272128V 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices,


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    PDF EDI2CG272128V 2x128Kx72, 2x128Kx72 EDI2CG272128VxxD1 14mmx20mm EDI2CG272128V85D1* EDI2CG272128V9D1* EDI2CG272128V12D1 EDI2CG272128V15D1 2x128Kx72 burst SRAM EDI2CG272128V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18

    GVT71128B18

    Abstract: No abstract text available
    Text: PRELIMINARY GALVANTECH, INC. GVT71128B18 128K X 18 SYNCHRONOUS BURST SRAM 128K x 18 SRAM SYNCHRONOUS BURST SRAM +3.3V POWER SUPPLY , REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family


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    PDF GVT71128B18 GVT71128B18 072x18 71128B18 access/10ns access/11ns access/15ns

    EDI2CG472256V

    Abstract: No abstract text available
    Text: White Electronic Designs EDI2CG472256V ADVANCED* 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES „ 4x256Kx72 Synchronous, Synchronous Burst „ Flow-Through Architecture „ Linear and Sequential Burst Support via MODE pin „ Clock Controlled Registered Module Enable EM#


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    PDF EDI2CG472256V 4x256Kx72 EDI2CG472256VxxD2 4x256Kx72. 14mmx20mm EDI2CG472256V9D2* 4x256Kx72 EDI2CG472256V10D2* EDI2CG472256V12D2 EDI2CG472256V

    GVT71128D32

    Abstract: No abstract text available
    Text: GALVANTECH, GVT71128D32 128K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


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    PDF GVT71128D32 GVT71128D32 072x32 71128D32 access/10ns access/12ns access/15ns

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE


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    PDF EEH2AG27265V 2x64Kx72, EDI2AG27265VxxD1 2x64Kx72. JEDEC14mmx20mmTQFP ay265V 265V85D1 EDI2AG27265V9D1 EDI2AG27265V1 EDI2AG272G5V12D1

    Untitled

    Abstract: No abstract text available
    Text: m EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin


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    PDF EDI2CG27264V 2x128Kx72 2x128Kx72, EDI2CG27264V85D1 2x64Kx72 EDI2CG27264V9D1* EDI2CG27264V10D1 EDI2CG27264V12D1

    617-2240

    Abstract: 273505 OJ-11
    Text: Advanced Micro Devices Am27 HB010 1 Megabit 131,072 x 8-Bit Burst Mode CMOS EPROM DISTINCTIVE CHARACTERISTICS • Highspeed - 50 ns random access - 15 ns burst access ■ No burst boundary ■ No burst limit ■ Pin compatible with Am27C010 Supports all “Burst" microprocessors


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    PDF Am27HB010 Am27C010 Am29000 WCP-13 5M-1/92-0 617-2240 273505 OJ-11

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through • 4x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin DIMM 168 contacts Module, organized as 4x128Kx72.


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    PDF EDI2CG472128V 4x128Kx72 CG472128V15D2 050TVP. EDI2CG472128V

    am27c0

    Abstract: AM27C010 12416B CLI10
    Text: Cl Advanced Micro Devices A m 2 7 H B 0 1 0 1 Megabit 131,072 x 8-Bit Burst Mode CMOS EPROM DISTINCTIVE CHARACTERISTICS • High speed - 50 ns random access - 15 ns burst access ■ No burst boundary ■ No burst limit ■ Pin compatible with Am27C010 Supports all “Burst” microprocessors


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    PDF Am27HB010 Am27C010 Am29000 WCP-13 5M-1/92-0 am27c0 12416B CLI10

    KMM764V41AG2-15

    Abstract: 15SRAM KMM76 kmm764v41
    Text: KMM764V41AG2 SRAM MODULE 256KB Synchronous Pipelined Burst SRAM Module PIN CONFIGURATION Top View FEATURES Implemented based on COAST 3.1 Supports Interleave Burst and Linear Burst Mode Zero-wait-state operation at 75/66MHz TTL compatible inputs/outputs


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    PDF KMM764V41AG2 256KB 75/66MHz 160-pin 1130mil) KMM764V41AG2-13/15 KMM764V41AG2-15 15SRAM KMM76 kmm764v41

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472256V_ 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x256Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable EM\ Clock Controlled Registered Bank Enables (E1\,


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    PDF EDI2CG472256V_ 4x256Kx72 EDI2CG472256V 4x256K 472256V12D 472256V15D

    KMM764V41AG7-15

    Abstract: AL3A u58 136 kmm764v41
    Text: KMM764V41AG7 SRAM MODULE 256KB Synchronous Pipelined Burst SRAM Module PIN CONFIGURATION Top View FEATURES Implemented based on COAST 3.1 Supports Interleave Burst and Linear Burst Mode Zero-wait-state operation at 75/66MHz TTL compatible inputs/outputs


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    PDF KMM764V41AG7 256KB 75/66MHz 160-pin KMM764V41AG7-13/15 36Address KMM764V41AG7-15 AL3A u58 136 kmm764v41