311D
Abstract: bup 311d
Text: BUP 311D Infineon IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A
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O-218
C67078-A4102
May-06-1999
311D
bup 311d
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bup 311d
Abstract: 311d BUP311D May-06-1999
Text: BUP 311D IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A Pin 1
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O-218
May-06-1999
bup 311d
311d
BUP311D
May-06-1999
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bup 311d
Abstract: bup212 igbt to220 311D SIGC16T120C
Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212
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SIGC16T120C
Q67041-A4673A003
7131-M,
bup 311d
bup212
igbt to220
311D
SIGC16T120C
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TO220 package infineon
Abstract: 311D SIGC16T120C BUP311D bup 311d
Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:
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SIGC16T120C
Q67041-A4673A003
7131-M,
TO220 package infineon
311D
SIGC16T120C
BUP311D
bup 311d
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Untitled
Abstract: No abstract text available
Text: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology short circuit prove positive temperature coefficient easy paralleling This chip is used for: power module BUP 311D /BUP 212 C Applications: drives G Chip Type VCE
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SIGC16T120C
L7131MM,
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bup212
Abstract: SIGC16T120C BUP 200 application
Text: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology short circuit prove positive temperature coefficient easy paralleling This chip is used for: power module BUP 311D /BUP 212 C Applications: drives G Chip Type VCE
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SIGC16T120C
L7131MM,
bup212
SIGC16T120C
BUP 200 application
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311D
Abstract: A003 SIGC16T120C bup212
Text: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212
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SIGC16T120C
Q67041-A4673sawn
7131-M,
311D
A003
SIGC16T120C
bup212
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Untitled
Abstract: No abstract text available
Text: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:
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SIGC16T120C
Q67041-A4673A003
7131-M,
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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O-220
O-218
346S2
BUO-218
buz 342 G
DIODE BUZ
z347
BUP 312
diode z104
z349
z332a
IGBT P213
DIODE BUZ 300
buz91a
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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O-220
O-218
buz 350 equivalent
BUP 203
transistor buz 36
BUP 312
BUP 304
leistungstransistoren
bup 401 datasheet
transistor buz 350
bup 213
BUP 309
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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BUP 312
Abstract: bup 313 BUP 312 drawing m4 12h CM75TF-12H
Text: CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM75TF-12H
Amperes/600
BUP 312
bup 313
BUP 312 drawing
m4 12h
CM75TF-12H
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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BUP200D
BUP314D
BUP410D
Q67078-A4400-A2
Q67040-A4420-A2
Q67078-A4401-A2
Q67078-A4402-A2
Q67040-A4407-A2
Q67078-A4203-A2
Q67078-A4205-A2
BUP 312
BUZ22
276 603d
BUZ 81
bup300
buz171
BUZ,350
BUZ,271
BUZ90A
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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BUZ10S2
BUZ11A
BUZ11S2
BUZ12A
O-220
O-218
BUP 312
buz 91 f
BUP 303 IGBT
DIODE BUZ 537
BUP 203
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BUP 300
Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
Text: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8
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0C67O47-A2O66-A2
0C67O47-A2O71-A2
0C67O47-A2O72-A2
0C67O47-A225O-A2
0C67O47-A2251-A2
0C67O47-A2252-A2
0C67O47-A2253-A2
0C67O47-A2254-A2
0C67O78-A1008-A8
0C67O78-A1OO8-A9
BUP 300
al394
Buz 304
s1348
S1338
buz 210
0C67O78-S311O-A2
BUZ325
S1314
S1313
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BUZ332A
Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100
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VUT05152
O-220
O-218
O-204
346S2
BUZ332A
BUZ54A
BUZ,350
BUZ p channel
BUP 312
BUZ,271
Buz94
BUZ357
buz 91 f
BUZ345
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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bsm10gd100dn1
Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2
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E-6288
BSM10GD100DN1
C67079-A1000-A6
C67079-A1040-A11
C67079-A1040-A17
C67079-A1001-A6
C67079-A1041-A5
C67079-A10436
E-6327
BSM10GD100DN
BTS 302
BSM10GD100
E6327
BUZ 324
E6288
eTS 410
siemens bsm 101 AR
C67076-A2505-A52
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BUP101
Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Text: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)
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150GB
0610T
C67078-S3126-A2
C67078-S3133-A2
C67078-S3128-A2
C67078-S3121-A2
C67078-S3120-A2
C67078-S3131-A2
67078-S3115-A2
C67078-S3113-A2
BUP101
BTS412A
buz 607
BTS 304
BUZ 324
BSM181C
BTS 413
bsm681f
Q62702-S616
62702-S393
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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O-220AB
O-220
2x100
2x150
100GAL
siemens igbt BSM 25GD 100D
siemens igbt BSM 25gd
bsm25gd100d
BSS 97
bts412a
BSM15GD100D
BTS 131 SIEMENS
Bts 629
BSS145
siemens igbt BSM 25 gb 100 d
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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