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    BUP 307 Search Results

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    BUP 307 Price and Stock

    Siemens BUP307D

    35 A, 1200 V, N-CHANNEL IGBT, TO-218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUP307D 1,361
    • 1 $16
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    • 100 $16
    • 1000 $8
    • 10000 $8
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    Others BUP307

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    BUP 307 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUP 307 Infineon Technologies TRANS IGBT CHIP N-CH 1200V 35A 3TO-218 AB Original PDF
    BUP307 Infineon Technologies IGBT Original PDF
    BUP307 Siemens IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) Original PDF
    BUP307 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP 307D Infineon Technologies TRANS IGBT CHIP 1200V 35A 3TO-218AB Original PDF
    BUP307D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP307-D Infineon Technologies IGBT Duopack (IGBT with Antiparallel ... Original PDF
    BUP307D Siemens Original PDF
    BUP307D Siemens IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) Original PDF

    BUP 307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q67078-A4201-A2

    Abstract: BUP307
    Text: BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 307 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67078-A4201-A2 Maximum Ratings


    Original     		PDF O-218 Q67078-A4201-A2 Dec-07-1995 Q67078-A4201-A2 BUP307

    a 307d

    Abstract: 307D BUP 307D Q67040-A4221-A2
    Text: BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 307D 1200V 35A Pin 3 C E Package Ordering Code


    Original     		PDF O-218 Q67040-A4221-A2 Dec-02-1996 a 307d 307D BUP 307D Q67040-A4221-A2

    BUP 307D

    Abstract: 307D BUP307D Q67040-A4221-A2
    Text: BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 307D 1200V 35A Pin 3 C E Package Ordering Code


    Original     		PDF O-218 Q67040-A4221-A2 Dec-02-1996 BUP 307D 307D BUP307D Q67040-A4221-A2

    BUP 200

    Abstract: BUP 307 Q67078-A4201-A2
    Text: BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 307 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67078-A4201-A2 Maximum Ratings


    Original     		PDF O-218 Q67078-A4201-A2 Dec-07-1995 BUP 200 BUP 307 Q67078-A4201-A2

    BUN DIODE

    Abstract: DIODE EVP 28 CM50TF-12H bup transistor
    Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R


    Original     		PDF CM50TF-12H Amperes/600 20-25kHz) BUN DIODE DIODE EVP 28 CM50TF-12H bup transistor

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


    Original     		PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


    Original     		PDF O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


    Original     		PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan     		PDF C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2

    siemens igbt BSM 300

    Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
    Text: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D


    OCR Scan     		PDF Q67040-A4423-A2 P-TO220-3-1 Q67040-A4229-A2 P-T0218-3-1 Q67040-A4230-A2 Q67040-A4420-A2 P-T0220-3-1 Q67040-A4225-A2 siemens igbt BSM 300 Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4228-A2

    siemens igbt

    Abstract: siemens igbt chip TO218AB package siemens tc 35 BUP30 BUP307
    Text: SIEMENS BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 VCE 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218AB Q67078-A4201-A2 Maximum Ratings


    OCR Scan     		PDF O-218AB Q67078-A4201-A2 siemens igbt siemens igbt chip TO218AB package siemens tc 35 BUP30 BUP307

    307d

    Abstract: vqe 14 E P 307 diode 307d
    Text: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code


    OCR Scan     		PDF O-218 Q67040-A4221-A2 Dec-02-1996 307d vqe 14 E P 307 diode 307d

    BUP 307

    Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
    Text: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF O-218 7078-A 200-A 201-A 100ms BUP 307 transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 307D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed 1 • Low tail current VPT05156 2 3 • Latch-up free • Including fast free-wheel diode Type BUP 307D »'CE h 1200V 35A Pin 1 Pin 2 Pin 3


    OCR Scan     		PDF O-218

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 VCE h 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218AB Q67078-A4201-A2 Maximum Ratings


    OCR Scan     		PDF O-218AB Q67078-A4201-A2 D06SDSE 6S35bGS

    1187 GE

    Abstract: No abstract text available
    Text: SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 304 VfcE 1000V 35A C Pin 3 E Package Ordering Code TO-218AB Q67078-A4200-A2 Maximum Ratings


    OCR Scan     		PDF O-218AB Q67078-A4200-A2 1187 GE

    BUP 312

    Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
    Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186


    OCR Scan     		PDF BUP200D BUP314D BUP410D Q67078-A4400-A2 Q67040-A4420-A2 Q67078-A4401-A2 Q67078-A4402-A2 Q67040-A4407-A2 Q67078-A4203-A2 Q67078-A4205-A2 BUP 312 BUZ22 276 603d BUZ 81 bup300 buz171 BUZ,350 BUZ,271 BUZ90A

    TRANSISTOR JC

    Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan     		PDF O-218 C67078-A4200-A2 C67078-A4201-A2 TRANSISTOR JC 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


    OCR Scan     		PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


    OCR Scan     		PDF BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203

    BUP 300

    Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
    Text: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8


    OCR Scan     		PDF 0C67O47-A2O66-A2 0C67O47-A2O71-A2 0C67O47-A2O72-A2 0C67O47-A225O-A2 0C67O47-A2251-A2 0C67O47-A2252-A2 0C67O47-A2253-A2 0C67O47-A2254-A2 0C67O78-A1008-A8 0C67O78-A1OO8-A9 BUP 300 al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313

    BUZ332A

    Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
    Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100


    OCR Scan     		PDF VUT05152 O-220 O-218 O-204 346S2 BUZ332A BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345