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    BUP 213 Search Results

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    BUP 213 Price and Stock

    Infineon Technologies AG BUP213

    IGBT 1200V 32A 200W TO220
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    DigiKey BUP213 Tube 500
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    ComSIT USA BUP213 1,634
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    BUP 213 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUP213 Infineon Technologies 18A 1200V TO220AB IGBT Original PDF
    BUP213 Siemens IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) Original PDF
    BUP213E3045 Infineon Technologies IGBT Transistor, IGBT Chip, N Channel, 1200V, TO-220AB, 3-Pin Original PDF

    BUP 213 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A4407

    Abstract: C32TC Q67040-A4407-A2
    Text: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings


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    PDF O-220 Q67040-A4407-A2 Nov-30-1995 A4407 C32TC Q67040-A4407-A2

    A4407

    Abstract: BUP 200 Q67040-A4407-A2 Semiconductor Group igbt bup213 bup 213
    Text: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings


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    PDF O-220 Q67040-A4407-A2 Nov-30-1995 A4407 BUP 200 Q67040-A4407-A2 Semiconductor Group igbt bup213 bup 213

    A4407

    Abstract: Infineon IGBT BUP 200 Ultrasonic Transducer for flowmeter Q67040-A4407 infineon package bup 213 bup213
    Text: BUP 213 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407 Maximum Ratings


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    PDF O-220 Q67040-A4407 Nov-30-1995 A4407 Infineon IGBT BUP 200 Ultrasonic Transducer for flowmeter Q67040-A4407 infineon package bup 213 bup213

    Untitled

    Abstract: No abstract text available
    Text: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C


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    PDF SIGC25T120C L7141MM,

    BUP213

    Abstract: A001 SIGC25T120C
    Text: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V


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    PDF SIGC25T120C C67078-A4674sawn 7141-M, BUP213 A001 SIGC25T120C

    BUP213

    Abstract: SIGC25T120C SIGC25T120CL 280-400 BUP21
    Text: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120CL VCE ICn 1200V


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    PDF SIGC25T120C SIGC25T120CL C67078-A4674A001 7141-M, BUP213 SIGC25T120C SIGC25T120CL 280-400 BUP21

    Untitled

    Abstract: No abstract text available
    Text: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C


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    PDF SIGC25T120C 50ypes L7141MM,

    BUP213

    Abstract: SIGC25T120C
    Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size


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    PDF SIGC25T120C C67078-A4674A001 7141-M, BUP213 SIGC25T120C

    bup213

    Abstract: BUP21
    Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size


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    PDF SIGC25T120C C67078-A4674A001 14ypes 7141-M, bup213 BUP21

    Untitled

    Abstract: No abstract text available
    Text: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size


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    PDF SIGC25T120C C67078-A4674A001 7141-M,

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


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    PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


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    PDF O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


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    PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


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    PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    82801db

    Abstract: No abstract text available
    Text: R Intel 82801DB I/O Controller Hub ICH4 : AC ’97 Programmers Reference Manual (PRM) May 2002 Revision 001 Document Number: 251373-001 Intel® 82801DB I/O controller Hub (ICH4) AC’97 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    PDF 82801DB

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


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    PDF VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 V'CE h 1200V 32A BUP 213 Pin 1 Maximum Ratings


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    PDF O-220 Q67040-A4407-A2 053SbGS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 213 VCE 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings


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    PDF O-220 Q67040-A4407-A2

    BUP 312

    Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
    Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186


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    PDF BUP200D BUP314D BUP410D Q67078-A4400-A2 Q67040-A4420-A2 Q67078-A4401-A2 Q67078-A4402-A2 Q67040-A4407-A2 Q67078-A4203-A2 Q67078-A4205-A2 BUP 312 BUZ22 276 603d BUZ 81 bup300 buz171 BUZ,350 BUZ,271 BUZ90A

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


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    PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


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    PDF BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


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    PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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